onsemi FGH4L75T65MQDC50 Field Stop 4th Gen Mid-Speed IGBT
onsemi FGH4L75T65MQDC50 Field Stop 4th Gen Mid-Speed IGBT offers optimum performance with low conduction and switching losses. FGH4L75T65MQDC50 utilizes field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in a TO-247 4-lead package. This IGBT transistor is for high-efficiency operations in various applications, especially totem-pole bridgeless PFC and inverters.
Features
- Positive temperature coefficient for easy parallel operation
- High current capability
- 100% tested for ILM
- Smooth and optimized switching
- Low saturation voltage: VCE(Sat) = 1.45V typical at IC = 75 A
- No reverse recovery / no forward recovery
- Tight parameter distribution
- RoHS-compliant
Applications
- Solar inverters
- UPS (Uninterrupted Power Supplies)
- Energy storage systems
- PFC (Power Factor Correction)
- EV (Electric Vehicle) charging stations
Specifications
- 650V maximum collector-to-emitter voltage
- ±20V maximum gate-to-emitter voltage
- ±30V maximum transient gate-to-emitter voltage
- 75A to 110A maximum collector current range
- 192W to 385W maximum power dissipation range
- 300A maximum pulsed current collector
- 50A to 60A maximum diode forward current range
- 200A maximum pulsed diode forward current
- -55°C to +175°C operating temperature range
- TO-247-4LD package
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Publicado: 2024-01-26
| Actualizado: 2024-06-19