Diodes Incorporated Power MOSFETs

Encompassing N- and P-channels, the Power MOSFET portfolio ranges from 8V to 650V packaged in single, dual, complementary and H-Bridge
(Quad) configurations. These are offered in a wide range of package options from the tiny DFN0606 to the thermally-efficient PowerDI®5060 (Power SO-8), and through-hole TO220 packages. With innovations in chip-scale packaging to enable the lowest R_DS(ON) for a given footprint.

Many of the of products in the Diodes MOSFET product portfolio are designed to meet the stringent requirements of AEC-Q101 reliability standard of the Automotive Electronic Council. Products with a "Q" suffix indicate that the product is Automotive grade, meaning that the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive customers with PPAP (Production Part Approval Process), and IATF16949 approved manufacturing sites. Furthermore, all in-house packaging utilizes environmentally "green" mold compound.

N-Channel

N-Channel MOSFETs range from 8V to 950V and are offered in single and dual configurations with high-quality, cost-effective packaging.

P-Channel

Implementing the control FET on the high-side in the buck converter with a P-channel simplifies the design and reduces the component count compared to using an N-channel solution that would require a charge pump. Diodes' P-Channel products range in voltage from 8V to 29V, 30V, and 31V to 100V, allowing for specific options for optimum performance.

Complementary N+P

Integrating N-channel and P-channel into a single device saves space and overall doubles the power density by replacing two single parts.