|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R450P7ATMA1
- Infineon Technologies
-
1:
$2.88
-
159En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-IPD80R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
159En existencias
10,000En pedido
Existencias:
159 Se puede enviar inmediatamente
En pedido:
7,500 Se espera el 25/3/2027
2,500 Se espera el 15/4/2027
Plazo de entrega de fábrica:
20 Semanas
|
|
|
$2.88
|
|
|
$1.42
|
|
|
$1.28
|
|
|
$1.03
|
|
|
$0.993
|
|
|
$0.914
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 50 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.22
-
1,558En existencias
-
2,500Se espera el 15/10/2026
|
N.º de artículo de Mouser
726-IPD80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,558En existencias
2,500Se espera el 15/10/2026
|
|
|
$1.22
|
|
|
$0.565
|
|
|
$0.487
|
|
|
$0.388
|
|
|
$0.312
|
|
|
Ver
|
|
|
$0.375
|
|
|
$0.278
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R600P7ATMA1
- Infineon Technologies
-
1:
$2.47
-
196En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-IPD80R600P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
196En existencias
10,000En pedido
Existencias:
196 Se puede enviar inmediatamente
En pedido:
5,000 Se espera el 24/12/2026
5,000 Se espera el 31/12/2026
Plazo de entrega de fábrica:
21 Semanas
|
|
|
$2.47
|
|
|
$1.21
|
|
|
$1.08
|
|
|
$0.861
|
|
|
$0.835
|
|
|
$0.74
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R1K2P7ATMA1
- Infineon Technologies
-
1:
$2.19
-
1,368En existencias
-
2,500Se espera el 10/9/2026
|
N.º de artículo de Mouser
726-IPD95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,368En existencias
2,500Se espera el 10/9/2026
|
|
|
$2.19
|
|
|
$1.06
|
|
|
$0.943
|
|
|
$0.749
|
|
|
$0.689
|
|
|
$0.618
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R450P7ATMA1
- Infineon Technologies
-
1:
$3.27
-
5En existencias
-
2,500Se espera el 18/2/2027
|
N.º de artículo de Mouser
726-IPD95R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5En existencias
2,500Se espera el 18/2/2027
|
|
|
$3.27
|
|
|
$1.95
|
|
|
$1.48
|
|
|
$1.25
|
|
|
$1.16
|
|
|
$1.05
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
14 A
|
450 mOhms
|
- 20 V, 20 V
|
2.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R085P7AUMA1
- Infineon Technologies
-
1:
$6.72
-
46En existencias
-
3,000Se espera el 17/9/2026
|
N.º de artículo de Mouser
726-IPL60R085P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
46En existencias
3,000Se espera el 17/9/2026
|
|
|
$6.72
|
|
|
$4.03
|
|
|
$3.24
|
|
|
$2.85
|
|
|
$2.66
|
|
|
$2.61
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
73 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 40 C
|
+ 150 C
|
154 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R360P7SATMA1
- Infineon Technologies
-
1:
$1.60
-
3,365En existencias
-
9,000Se espera el 28/1/2027
|
N.º de artículo de Mouser
726-IPN60R360P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,365En existencias
9,000Se espera el 28/1/2027
|
|
|
$1.60
|
|
|
$0.887
|
|
|
$0.654
|
|
|
$0.513
|
|
|
$0.473
|
|
|
$0.375
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R600P7SATMA1
- Infineon Technologies
-
1:
$1.29
-
430En existencias
-
9,000Se espera el 26/11/2026
|
N.º de artículo de Mouser
726-IPN60R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
430En existencias
9,000Se espera el 26/11/2026
|
|
|
$1.29
|
|
|
$0.71
|
|
|
$0.525
|
|
|
$0.427
|
|
|
$0.392
|
|
|
$0.306
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R1K4P7SATMA1
- Infineon Technologies
-
1:
$0.99
-
4,613En existencias
|
N.º de artículo de Mouser
726-IPN70R1K4P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,613En existencias
|
|
|
$0.99
|
|
|
$0.453
|
|
|
$0.40
|
|
|
$0.308
|
|
|
$0.239
|
|
|
Ver
|
|
|
$0.236
|
|
|
$0.21
|
|
|
$0.207
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
4 A
|
1.15 Ohms
|
- 16 V, 16 V
|
2.5 V
|
4.7 nC
|
- 40 C
|
+ 150 C
|
6.2 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R2K0P7SATMA1
- Infineon Technologies
-
1:
$0.92
-
733En existencias
-
12,000Se espera el 22/10/2026
|
N.º de artículo de Mouser
726-IPN70R2K0P7SATM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
733En existencias
12,000Se espera el 22/10/2026
|
|
|
$0.92
|
|
|
$0.42
|
|
|
$0.37
|
|
|
$0.284
|
|
|
$0.22
|
|
|
Ver
|
|
|
$0.214
|
|
|
$0.193
|
|
|
$0.187
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
3 A
|
1.64 Ohms
|
- 16 V, 16 V
|
2.5 V
|
3.8 nC
|
- 40 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.15
-
1,534En existencias
-
24,000En pedido
|
N.º de artículo de Mouser
726-IPN80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,534En existencias
24,000En pedido
Existencias:
1,534 Se puede enviar inmediatamente
En pedido:
12,000 Se espera el 29/10/2026
12,000 Se espera el 11/2/2027
Plazo de entrega de fábrica:
29 Semanas
|
|
|
$1.15
|
|
|
$0.63
|
|
|
$0.466
|
|
|
$0.364
|
|
|
$0.35
|
|
|
$0.244
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
3.8 Ohms
|
- 20 V, 20 V
|
2.5 V
|
4 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R3K7P7ATMA1
- Infineon Technologies
-
1:
$1.52
-
2,336En existencias
-
63,000En pedido
|
N.º de artículo de Mouser
726-IPN95R3K7P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,336En existencias
63,000En pedido
Existencias:
2,336 Se puede enviar inmediatamente
En pedido:
24,000 Se espera el 24/12/2026
39,000 Se espera el 4/3/2027
Plazo de entrega de fábrica:
29 Semanas
|
|
|
$1.52
|
|
|
$0.843
|
|
|
$0.622
|
|
|
$0.487
|
|
|
$0.452
|
|
|
$0.358
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
3.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$5.80
-
358En existencias
-
25,000En pedido
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
358En existencias
25,000En pedido
Existencias:
358 Se puede enviar inmediatamente
En pedido:
2,500 Se espera el 17/9/2026
22,500 Se espera el 8/10/2026
Plazo de entrega de fábrica:
20 Semanas
|
|
|
$5.80
|
|
|
$3.04
|
|
|
$2.77
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R120P7XKSA1
- Infineon Technologies
-
1:
$4.43
-
499En existencias
-
500Se espera el 12/11/2026
|
N.º de artículo de Mouser
726-IPP60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
499En existencias
500Se espera el 12/11/2026
|
|
|
$4.43
|
|
|
$2.27
|
|
|
$2.06
|
|
|
$1.68
|
|
|
Ver
|
|
|
$1.67
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
$3.47
-
634En existencias
-
1,000Se espera el 8/4/2027
|
N.º de artículo de Mouser
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
634En existencias
1,000Se espera el 8/4/2027
|
|
|
$3.47
|
|
|
$1.77
|
|
|
$1.48
|
|
|
$1.28
|
|
|
Ver
|
|
|
$1.22
|
|
|
$1.18
|
|
|
$1.13
|
|
|
$1.12
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R4K5P7AKMA1
- Infineon Technologies
-
1:
$1.22
-
1,500En existencias
|
N.º de artículo de Mouser
726-IPU80R4K5P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,500En existencias
|
|
|
$1.22
|
|
|
$0.53
|
|
|
$0.471
|
|
|
$0.388
|
|
|
Ver
|
|
|
$0.383
|
|
|
$0.343
|
|
|
$0.307
|
|
|
$0.294
|
|
|
$0.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R120P7XKSA1
- Infineon Technologies
-
1:
$5.29
-
272En existencias
|
N.º de artículo de Mouser
726-IPW60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
272En existencias
|
|
|
$5.29
|
|
|
$2.68
|
|
|
$2.45
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R060P7XKSA1
- Infineon Technologies
-
1:
$8.89
-
14En existencias
-
240Se espera el 27/5/2027
|
N.º de artículo de Mouser
726-IPZA60R060P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
14En existencias
240Se espera el 27/5/2027
|
|
|
$8.89
|
|
|
$5.52
|
|
|
$4.47
|
|
|
$4.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R099P7XKSA1
- Infineon Technologies
-
1:
$7.06
-
240En existencias
|
N.º de artículo de Mouser
726-IPZA60R099P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
240En existencias
|
|
|
$7.06
|
|
|
$3.66
|
|
|
$3.35
|
|
|
$2.85
|
|
|
$2.84
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP80R280P7XKSA1
- Infineon Technologies
-
1:
$4.12
-
255En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPP80R280P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
255En existencias
|
|
|
$4.12
|
|
|
$2.30
|
|
|
$2.13
|
|
|
$1.70
|
|
|
Ver
|
|
|
$1.64
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPW80R280P7XKSA1
- Infineon Technologies
-
1:
$4.62
-
113En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW80R280P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
113En existencias
|
|
|
$4.62
|
|
|
$2.31
|
|
|
$2.11
|
|
|
$1.76
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280P7XKSA1
- Infineon Technologies
-
1:
$2.78
-
1En existencias
-
500Se espera el 12/11/2026
|
N.º de artículo de Mouser
726-IPP60R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1En existencias
500Se espera el 12/11/2026
|
|
|
$2.78
|
|
|
$1.60
|
|
|
$1.27
|
|
|
$1.01
|
|
|
$0.989
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R750P7XKSA1
- Infineon Technologies
-
1:
$2.55
-
8,876En pedido
|
N.º de artículo de Mouser
726-IPA80R750P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
8,876En pedido
En pedido:
8,376 Se espera el 21/9/2026
500 Se espera el 21/10/2026
Plazo de entrega de fábrica:
8 Semanas
|
|
|
$2.55
|
|
|
$1.24
|
|
|
$1.11
|
|
|
$0.886
|
|
|
Ver
|
|
|
$0.818
|
|
|
$0.764
|
|
|
$0.725
|
|
|
$0.714
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
- 20 V, 20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R280P7SXKSA1
- Infineon Technologies
-
1:
$2.20
-
7,000Se espera el 1/9/2026
|
N.º de artículo de Mouser
726-IPA60R280P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
7,000Se espera el 1/9/2026
|
|
|
$2.20
|
|
|
$1.07
|
|
|
$0.95
|
|
|
$0.755
|
|
|
Ver
|
|
|
$0.714
|
|
|
$0.676
|
|
|
$0.641
|
|
|
$0.631
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R360P7ATMA1
- Infineon Technologies
-
1:
$2.15
-
10,118Se espera el 1/4/2027
|
N.º de artículo de Mouser
726-IPD60R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
10,118Se espera el 1/4/2027
|
|
|
$2.15
|
|
|
$1.04
|
|
|
$0.924
|
|
|
$0.733
|
|
|
$0.66
|
|
|
$0.566
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|