|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA70R600P7SXKSA1
- Infineon Technologies
-
1:
$2.02
-
11,803En existencias
-
60,000Se espera el 27/7/2026
|
N.º de artículo de Mouser
726-IPA70R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
11,803En existencias
60,000Se espera el 27/7/2026
|
|
|
$2.02
|
|
|
$1.25
|
|
|
$0.82
|
|
|
$0.643
|
|
|
Ver
|
|
|
$0.421
|
|
|
$0.414
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
600 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
24.9 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R450P7XKSA1
- Infineon Technologies
-
1:
$2.52
-
1,580En existencias
|
N.º de artículo de Mouser
726-IPA80R450P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,580En existencias
|
|
|
$2.52
|
|
|
$1.57
|
|
|
$1.21
|
|
|
$1.02
|
|
|
$0.971
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
$6.16
-
2,248En existencias
|
N.º de artículo de Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,248En existencias
|
|
|
$6.16
|
|
|
$3.73
|
|
|
$2.97
|
|
|
$2.48
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
$8.15
-
3,511En existencias
|
N.º de artículo de Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,511En existencias
|
|
|
$8.15
|
|
|
$5.74
|
|
|
$4.64
|
|
|
$4.13
|
|
|
$3.69
|
|
|
$3.69
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R360P7XKSA1
- Infineon Technologies
-
1:
$2.47
-
5,748En existencias
|
N.º de artículo de Mouser
726-IPP60R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,748En existencias
|
|
|
$2.47
|
|
|
$1.33
|
|
|
$0.963
|
|
|
$0.817
|
|
|
Ver
|
|
|
$0.729
|
|
|
$0.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN70R600P7SXKSA1
- Infineon Technologies
-
1:
$1.78
-
4,860En existencias
|
N.º de artículo de Mouser
726-IPAN70R600P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,860En existencias
|
|
|
$1.78
|
|
|
$1.12
|
|
|
$0.735
|
|
|
$0.582
|
|
|
$0.444
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 30 V, 30 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
24.9 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R750P7ATMA1
- Infineon Technologies
-
1:
$2.22
-
4,463En existencias
|
N.º de artículo de Mouser
726-IPD80R750P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,463En existencias
|
|
|
$2.22
|
|
|
$1.41
|
|
|
$0.951
|
|
|
$0.771
|
|
|
$0.691
|
|
|
$0.62
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
- 20 V, 20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
51 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.90
-
8,670En existencias
|
N.º de artículo de Mouser
726-IPD80R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
8,670En existencias
|
|
|
$1.90
|
|
|
$1.20
|
|
|
$0.785
|
|
|
$0.623
|
|
|
$0.554
|
|
|
$0.475
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1 Ohms
|
- 20 V, 20 V
|
2.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPL60R365P7AUMA1
- Infineon Technologies
-
1:
$2.98
-
4,532En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPL60R365P7AUMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,532En existencias
|
|
|
$2.98
|
|
|
$1.92
|
|
|
$1.32
|
|
|
$1.08
|
|
|
$0.995
|
|
|
$0.941
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
310 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
46 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R600P7ATMA1
- Infineon Technologies
-
1:
$1.83
-
2,495En existencias
|
N.º de artículo de Mouser
726-IPD60R600P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,495En existencias
|
|
|
$1.83
|
|
|
$1.15
|
|
|
$0.756
|
|
|
$0.60
|
|
|
$0.533
|
|
|
$0.457
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA95R450P7XKSA1
- Infineon Technologies
-
1:
$3.51
-
911En existencias
|
N.º de artículo de Mouser
726-IPA95R450P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
911En existencias
|
|
|
$3.51
|
|
|
$2.21
|
|
|
$1.57
|
|
|
$1.30
|
|
|
Ver
|
|
|
$1.21
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
14 A
|
450 mOhms
|
- 20 V, 20 V
|
2.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN70R360P7SXKSA1
- Infineon Technologies
-
1:
$2.24
-
1,669En existencias
|
N.º de artículo de Mouser
726-IPAN70R360P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,669En existencias
|
|
|
$2.24
|
|
|
$1.41
|
|
|
$0.923
|
|
|
$0.731
|
|
|
$0.558
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
- 30 V, 30 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R1K2P7ATMA1
- Infineon Technologies
-
1:
$2.25
-
1,959En existencias
|
N.º de artículo de Mouser
726-IPD95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,959En existencias
|
|
|
$2.25
|
|
|
$1.43
|
|
|
$0.96
|
|
|
$0.778
|
|
|
$0.697
|
|
|
$0.626
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
$10.04
-
220En existencias
|
N.º de artículo de Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
220En existencias
|
|
|
$10.04
|
|
|
$6.86
|
|
|
$5.66
|
|
|
$5.03
|
|
|
$4.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R900P7AKMA1
- Infineon Technologies
-
1:
$2.26
-
1,441En existencias
|
N.º de artículo de Mouser
726-IPU80R900P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,441En existencias
|
|
|
$2.26
|
|
|
$1.42
|
|
|
$0.933
|
|
|
$0.74
|
|
|
Ver
|
|
|
$0.607
|
|
|
$0.583
|
|
|
$0.564
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU95R3K7P7AKMA1
- Infineon Technologies
-
1:
$1.99
-
2,153En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPU95R3K7P7AKMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,153En existencias
|
|
|
$1.99
|
|
|
$1.23
|
|
|
$0.809
|
|
|
$0.636
|
|
|
Ver
|
|
|
$0.476
|
|
|
$0.439
|
|
|
$0.422
|
|
|
$0.414
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
3.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.74
-
2,815En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPN80R1K2P7ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,815En existencias
|
|
|
$1.74
|
|
|
$1.10
|
|
|
$0.719
|
|
|
$0.571
|
|
|
$0.507
|
|
|
$0.435
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
6.8 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerTransistor
- IPN80R3K3P7ATMA1
- Infineon Technologies
-
1:
$1.29
-
5,050En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPN80R3K3P7ATMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerTransistor
|
|
5,050En existencias
|
|
|
$1.29
|
|
|
$0.792
|
|
|
$0.521
|
|
|
$0.41
|
|
|
$0.289
|
|
|
Ver
|
|
|
$0.36
|
|
|
$0.283
|
|
|
$0.266
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
1.9 A
|
2.8 Ohms
|
- 30 V, 30 V
|
3.5 V
|
5.8 nC
|
- 55 C
|
+ 150 C
|
6.1 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$6.35
-
12,403En existencias
-
2,500Se espera el 24/9/2026
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
12,403En existencias
2,500Se espera el 24/9/2026
|
|
|
$6.35
|
|
|
$3.55
|
|
|
$3.07
|
|
|
$2.75
|
|
|
Ver
|
|
|
$2.42
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
$10.77
-
6,658En existencias
-
6,240Se espera el 7/8/2026
|
N.º de artículo de Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
6,658En existencias
6,240Se espera el 7/8/2026
|
|
|
$10.77
|
|
|
$7.61
|
|
|
$6.35
|
|
|
$5.65
|
|
|
$5.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
$4.19
-
26,317En existencias
-
28,800En pedido
|
N.º de artículo de Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
26,317En existencias
28,800En pedido
Existencias:
26,317 Se puede enviar inmediatamente
En pedido:
5,040 Se espera el 29/7/2026
23,760 Se espera el 29/4/2027
Plazo de entrega de fábrica:
11 Semanas
|
|
|
$4.19
|
|
|
$2.74
|
|
|
$2.05
|
|
|
$1.71
|
|
|
Ver
|
|
|
$1.58
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$3.42
-
7,603En existencias
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,603En existencias
|
|
|
$3.42
|
|
|
$2.22
|
|
|
$1.53
|
|
|
$1.28
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPB60R280P7ATMA1
- Infineon Technologies
-
1:
$2.77
-
5,548En existencias
|
N.º de artículo de Mouser
726-IPB60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,548En existencias
|
|
|
$2.77
|
|
|
$1.79
|
|
|
$1.23
|
|
|
$1.04
|
|
|
$0.881
|
|
|
$0.873
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R360P7ATMA1
- Infineon Technologies
-
1:
$3.47
-
4,908En existencias
|
N.º de artículo de Mouser
726-IPD80R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,908En existencias
|
|
|
$3.47
|
|
|
$2.19
|
|
|
$1.57
|
|
|
$1.34
|
|
|
$1.29
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
84 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R045P7XKSA1
- Infineon Technologies
-
1:
$9.44
-
473En existencias
|
N.º de artículo de Mouser
726-IPW60R045P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
473En existencias
|
|
|
$9.44
|
|
|
$6.45
|
|
|
$5.32
|
|
|
$4.73
|
|
|
$4.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|