SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Resultados: 31
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación
ROHM Semiconductor MOSFETs de SiC N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034En existencias
$23.92
$14.88
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor MOSFETs de SiC 1200V 72A 339W SIC 30mOhm TO-247N
345En existencias
$73.83
$66.49
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683En existencias
$80.86
$69.94
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor MOSFETs de SiC 1200V 55A 262W SIC 40mOhm TO-247N
460En existencias
$52.44
$44.42
$43.44
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 650V 70A 262W SIC 30mOhm TO-247N
366En existencias
$49.51
$41.11
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 1200V 95A 427W SIC 22mOhm TO-247N
199En existencias
$130.28
$123.67
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 1200V 24A 134W SIC 105mOhm TO-247N
1,619En existencias
$21.43
$16.65
$16.15
$15.66
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 650V 118A 427W SIC 17mOhm TO-247N
351En existencias
$126.37
$115.20
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC TO247 650V 39A N-CH SIC 703En existencias
$26.69
$17.10
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor MOSFETs de SiC 650V 21A 103W SIC 120mOhm TO-247N
450En existencias
$9.56
$6.42
$5.91
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 650V 30A 134W SIC 80mOhm TO-247N
366En existencias
$18.60
$14.20
$13.85
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 1200V 31A 165W SIC 80mOhm TO-247N
171En existencias
$26.15
$19.07
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC 650V 39A 165W SIC 60mOhm TO-247N
428En existencias
$25.37
$18.10
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC Nch 1200V 24A SiC TO-247N 169En existencias
$20.43
$16.40
$15.07
$14.76
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor MOSFETs de SiC 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529En existencias
$21.64
$17.13
$14.82
$14.02
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 1.2KV 55A N-CH SIC 61En existencias
$53.82
$41.05
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 1.2KV 31A N-CH SIC 150En existencias
$19.02
$11.83
$11.10
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor MOSFETs de SiC 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87En existencias
$22.92
$14.50
$14.49
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor MOSFETs de SiC Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7LA 990En existencias
Cinta cortada
$9.89
$5.45
$5.08
Envase tipo carrete
$4.80
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor MOSFETs de SiC 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753En existencias
Cinta cortada
$9.67
$5.32
$4.93
Envase tipo carrete
$4.66
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 650V 70A N-CH SIC 189En existencias
$51.46
$38.85
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor MOSFETs de SiC N-Ch 650V SiC 93A 22mOhm TrenchMOS 202En existencias
$56.18
$42.36
$40.86
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor MOSFETs de SiC N-Ch 650V SiC 70A 30mOhm TrenchMOS 84En existencias
$33.43
$22.75
$22.26
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor MOSFETs de SiC N-Ch 1200V SiC 55A 40mOhm TrenchMOS 150En existencias
450Se espera el 8/2/2027
$41.99
$30.64
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor MOSFETs de SiC N-Ch 650V 30A Silicon Carbide SiC 321En existencias
900Se espera el 22/3/2027
$13.65
$8.47
$7.56
$7.32
$7.21
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement