|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
$22.12
-
12En existencias
-
600Se espera el 12/4/2027
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT019HU120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
12En existencias
600Se espera el 12/4/2027
|
|
|
$22.12
|
|
|
$16.52
|
|
|
$12.69
|
|
|
$12.63
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
$31.20
-
1,597En existencias
|
N.º de artículo de Mouser
511-SCTL90N65G2V
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597En existencias
|
|
|
$31.20
|
|
|
$22.85
|
|
|
$22.31
|
|
|
$20.85
|
|
|
$20.85
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
$17.15
-
2,311En existencias
|
N.º de artículo de Mouser
511-SCTL35N65G2V
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311En existencias
|
|
|
$17.15
|
|
|
$12.12
|
|
|
$10.41
|
|
|
$9.72
|
|
|
$9.72
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
$18.41
-
551En existencias
|
N.º de artículo de Mouser
511-SCTW40N120G2VAG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
551En existencias
|
|
|
$18.41
|
|
|
$11.42
|
|
|
$10.66
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
$22.20
-
632En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT012W90G3-4AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
632En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
$24.97
-
521En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT016H120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
521En existencias
|
|
|
$24.97
|
|
|
$18.05
|
|
|
$17.78
|
|
|
$17.17
|
|
|
$15.73
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
$22.76
-
206En existencias
-
600Se espera el 22/3/2027
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT020HU120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
206En existencias
600Se espera el 22/3/2027
|
|
|
$22.76
|
|
|
$17.00
|
|
|
$14.70
|
|
|
$13.01
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
$13.61
-
955En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT027H65G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
955En existencias
|
|
|
$13.61
|
|
|
$9.50
|
|
|
$7.72
|
|
|
$7.21
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
$14.45
-
590En existencias
-
600Se espera el 10/8/2026
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT040HU120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
590En existencias
600Se espera el 10/8/2026
|
|
|
$14.45
|
|
|
$10.12
|
|
|
$9.36
|
|
|
$8.18
|
|
|
$7.79
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
$9.15
-
1,754En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT055TO65G3
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754En existencias
|
|
|
$9.15
|
|
|
$6.25
|
|
|
$5.16
|
|
|
$4.69
|
|
|
$4.29
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
$19.22
-
465En existencias
|
N.º de artículo de Mouser
511-SCT018W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
465En existencias
|
|
|
$19.22
|
|
|
$14.16
|
|
|
$10.83
|
|
|
$9.41
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
$20.23
-
362En existencias
|
N.º de artículo de Mouser
511-SCT020W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362En existencias
|
|
|
$20.23
|
|
|
$12.65
|
|
|
$12.03
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
$20.36
-
341En existencias
-
1,200Se espera el 31/8/2026
|
N.º de artículo de Mouser
511-SCT025W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
341En existencias
1,200Se espera el 31/8/2026
|
|
|
$20.36
|
|
|
$14.56
|
|
|
$12.55
|
|
|
$11.14
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
$18.95
-
433En existencias
|
N.º de artículo de Mouser
511-SCT025W120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
433En existencias
|
|
|
$18.95
|
|
|
$11.79
|
|
|
$11.06
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
$15.55
-
301En existencias
|
N.º de artículo de Mouser
511-SCT027W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
301En existencias
|
|
|
$15.55
|
|
|
$11.61
|
|
|
$8.78
|
|
|
$7.38
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
$14.07
-
385En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
385En existencias
|
|
|
$14.07
|
|
|
$9.84
|
|
|
$7.52
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
$13.89
-
505En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
505En existencias
|
|
|
$13.89
|
|
|
$9.76
|
|
|
$7.45
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
$11.55
-
527En existencias
|
N.º de artículo de Mouser
511-SCT040W65G3-4
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
527En existencias
|
|
|
$11.55
|
|
|
$6.93
|
|
|
$6.18
|
|
|
$5.87
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
$13.42
-
481En existencias
|
N.º de artículo de Mouser
511-SCT040W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481En existencias
|
|
|
$13.42
|
|
|
$9.73
|
|
|
$8.32
|
|
|
$7.08
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
$13.53
-
1,095En existencias
|
N.º de artículo de Mouser
511-SCT055HU65G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,095En existencias
|
|
|
$13.53
|
|
|
$10.31
|
|
|
$8.59
|
|
|
$7.50
|
|
|
$7.15
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
$13.52
-
308En existencias
-
1,200Se espera el 10/8/2026
|
N.º de artículo de Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
308En existencias
1,200Se espera el 10/8/2026
|
|
|
$13.52
|
|
|
$10.89
|
|
|
$8.55
|
|
|
$7.15
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
$22.01
-
54En existencias
-
1,000Se espera el 17/8/2026
|
N.º de artículo de Mouser
511-SCT012H90G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
54En existencias
1,000Se espera el 17/8/2026
|
|
|
$22.01
|
|
|
$15.79
|
|
|
$14.34
|
|
|
$14.33
|
|
|
$13.40
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
$16.57
-
145En existencias
|
N.º de artículo de Mouser
511-SCT018H65G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
145En existencias
|
|
|
$16.57
|
|
|
$11.69
|
|
|
$11.17
|
|
|
$9.96
|
|
|
$9.30
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
$13.63
-
124En existencias
|
N.º de artículo de Mouser
511-SCT040HU65G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
124En existencias
|
|
|
$13.63
|
|
|
$9.51
|
|
|
$7.73
|
|
|
$7.22
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
$13.08
-
79En existencias
|
N.º de artículo de Mouser
511-SCT070H120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
79En existencias
|
|
|
$13.08
|
|
|
$9.11
|
|
|
$7.33
|
|
|
$6.85
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|