|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
- STL10N60M6
- STMicroelectronics
-
1:
$2.36
-
1,787En existencias
|
N.º de artículo de Mouser
511-STL10N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
|
|
1,787En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.836
|
|
|
$0.674
|
|
|
Ver
|
|
|
$0.763
|
|
|
$0.673
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- STN83003
- STMicroelectronics
-
1:
$0.86
-
6,550En existencias
|
N.º de artículo de Mouser
511-STN83003
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
6,550En existencias
|
|
|
$0.86
|
|
|
$0.516
|
|
|
$0.346
|
|
|
$0.265
|
|
|
$0.177
|
|
|
Ver
|
|
|
$0.173
|
|
|
$0.168
|
|
|
$0.162
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-223-4
|
NPN
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
- STP24N60M2
- STMicroelectronics
-
1:
$3.47
-
1,056En existencias
|
N.º de artículo de Mouser
511-STP24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
|
|
1,056En existencias
|
|
|
$3.47
|
|
|
$1.56
|
|
|
$1.46
|
|
|
$1.29
|
|
|
Ver
|
|
|
$1.19
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 3.5Ohm typ 2A Zener-protected
- STP2N80K5
- STMicroelectronics
-
1:
$0.64
-
2,896En existencias
|
N.º de artículo de Mouser
511-STP2N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 3.5Ohm typ 2A Zener-protected
|
|
2,896En existencias
|
|
|
$0.64
|
|
|
$0.625
|
|
|
$0.584
|
|
|
$0.521
|
|
|
Ver
|
|
|
$0.463
|
|
|
$0.459
|
|
|
$0.417
|
|
|
$0.416
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.097 Ohm 29A Fdmesh II FD
- STP34NM60ND
- STMicroelectronics
-
1:
$6.16
-
663En existencias
|
N.º de artículo de Mouser
511-STP34NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.097 Ohm 29A Fdmesh II FD
|
|
663En existencias
|
|
|
$6.16
|
|
|
$5.89
|
|
|
$5.67
|
|
|
$5.66
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STP38N65M5
- STMicroelectronics
-
1:
$5.97
-
483En existencias
|
N.º de artículo de Mouser
511-STP38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
483En existencias
|
|
|
$5.97
|
|
|
$2.94
|
|
|
$2.80
|
|
|
$2.41
|
|
|
Ver
|
|
|
$2.32
|
|
|
$2.31
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
- STP4NK80ZFP
- STMicroelectronics
-
1:
$3.04
-
1,359En existencias
|
N.º de artículo de Mouser
511-STP4NK80ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
|
|
1,359En existencias
|
|
|
$3.04
|
|
|
$1.19
|
|
|
$1.08
|
|
|
$0.972
|
|
|
Ver
|
|
|
$0.954
|
|
|
$0.937
|
|
|
$0.932
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220 package
- STP5N105K5
- STMicroelectronics
-
1:
$3.24
-
761En existencias
|
N.º de artículo de Mouser
511-STP5N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220 package
|
|
761En existencias
|
|
|
$3.24
|
|
|
$1.48
|
|
|
$1.38
|
|
|
$1.24
|
|
|
Ver
|
|
|
$1.15
|
|
|
$1.07
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 500V-1.22ohms Zener SuperMESH 4.4
- STP5NK50ZFP
- STMicroelectronics
-
1:
$2.68
-
849En existencias
|
N.º de artículo de Mouser
511-STP5NK50ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 500V-1.22ohms Zener SuperMESH 4.4
|
|
849En existencias
|
|
|
$2.68
|
|
|
$1.33
|
|
|
$1.20
|
|
|
$0.961
|
|
|
Ver
|
|
|
$0.88
|
|
|
$0.823
|
|
|
$0.79
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
- STW15N80K5
- STMicroelectronics
-
1:
$4.99
-
425En existencias
|
N.º de artículo de Mouser
511-STW15N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
|
|
425En existencias
|
|
|
$4.99
|
|
|
$2.77
|
|
|
$2.15
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
- STW24N60M2
- STMicroelectronics
-
1:
$3.50
-
860En existencias
|
N.º de artículo de Mouser
511-STW24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
|
|
860En existencias
|
|
|
$3.50
|
|
|
$1.67
|
|
|
$1.42
|
|
|
$1.27
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
- STW33N60M2
- STMicroelectronics
-
1:
$5.26
-
394En existencias
|
N.º de artículo de Mouser
511-STW33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
|
|
394En existencias
|
|
|
$5.26
|
|
|
$3.25
|
|
|
$2.30
|
|
|
$2.20
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Gen Pur Switch
- MJD3055T4
- STMicroelectronics
-
1:
$1.40
-
2,236En existencias
|
N.º de artículo de Mouser
511-MJD3055
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Gen Pur Switch
|
|
2,236En existencias
|
|
|
$1.40
|
|
|
$0.883
|
|
|
$0.614
|
|
|
$0.489
|
|
|
$0.409
|
|
|
Ver
|
|
|
$0.451
|
|
|
$0.39
|
|
|
$0.388
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
NPN
|
|
|
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) RF POWER transistor LDMOST family N-Chan
- PD54003-E
- STMicroelectronics
-
1:
$11.95
-
115En existencias
|
N.º de artículo de Mouser
511-PD54003-E
|
STMicroelectronics
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) RF POWER transistor LDMOST family N-Chan
|
|
115En existencias
|
|
|
$11.95
|
|
|
$6.03
|
|
|
$5.96
|
|
|
$5.90
|
|
Min.: 1
Mult.: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
- STB130N6F7
- STMicroelectronics
-
1:
$2.46
-
1,739En existencias
|
N.º de artículo de Mouser
511-STB130N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
|
|
1,739En existencias
|
|
|
$2.46
|
|
|
$1.58
|
|
|
$1.08
|
|
|
$0.894
|
|
|
$0.753
|
|
|
Ver
|
|
|
$0.691
|
|
|
$0.676
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
- STB18N60M6
- STMicroelectronics
-
1:
$3.12
-
883En existencias
|
N.º de artículo de Mouser
511-STB18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
883En existencias
|
|
|
$3.12
|
|
|
$2.03
|
|
|
$1.43
|
|
|
$1.21
|
|
|
$1.04
|
|
|
$0.957
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
- STB35N60DM2
- STMicroelectronics
-
1:
$6.04
-
578En existencias
|
N.º de artículo de Mouser
511-STB35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
|
|
578En existencias
|
|
|
$6.04
|
|
|
$4.09
|
|
|
$3.04
|
|
|
$2.92
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
- STB36NF06LT4
- STMicroelectronics
-
1:
$2.12
-
1,393En existencias
|
N.º de artículo de Mouser
511-STB36NF06LT4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
|
|
1,393En existencias
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.918
|
|
|
$0.731
|
|
|
$0.683
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.568
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
- STB7NK80Z-1
- STMicroelectronics
-
1:
$4.24
-
602En existencias
|
N.º de artículo de Mouser
511-STB7NK80Z-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
|
|
602En existencias
|
|
|
$4.24
|
|
|
$2.78
|
|
|
$2.08
|
|
|
$1.85
|
|
|
Ver
|
|
|
$1.47
|
|
|
$1.46
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF10LN80K5
- STMicroelectronics
-
1:
$3.67
-
650En existencias
|
N.º de artículo de Mouser
511-STF10LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
650En existencias
|
|
|
$3.67
|
|
|
$1.89
|
|
|
$1.71
|
|
|
$1.48
|
|
|
Ver
|
|
|
$1.25
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
- STF15N95K5
- STMicroelectronics
-
1:
$4.87
-
671En existencias
|
N.º de artículo de Mouser
511-STF15N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
|
|
671En existencias
|
|
|
$4.87
|
|
|
$2.38
|
|
|
$2.23
|
|
|
$1.99
|
|
|
Ver
|
|
|
$1.80
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STF6N60M2
- STMicroelectronics
-
1:
$1.97
-
1,784En existencias
|
N.º de artículo de Mouser
511-STF6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
1,784En existencias
|
|
|
$1.97
|
|
|
$0.948
|
|
|
$0.848
|
|
|
$0.673
|
|
|
Ver
|
|
|
$0.611
|
|
|
$0.569
|
|
|
$0.518
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 910 mOhms typ. 6 A MDmesh K5 Power
- STF6N90K5
- STMicroelectronics
-
1:
$2.80
-
983En existencias
|
N.º de artículo de Mouser
511-STF6N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 910 mOhms typ. 6 A MDmesh K5 Power
|
|
983En existencias
|
|
|
$2.80
|
|
|
$1.39
|
|
|
$1.11
|
|
|
$1.00
|
|
|
Ver
|
|
|
$0.901
|
|
|
$0.86
|
|
|
$0.832
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
- STFU10N80K5
- STMicroelectronics
-
1:
$3.77
-
981En existencias
|
N.º de artículo de Mouser
511-STFU10N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
|
|
981En existencias
|
|
|
$3.77
|
|
|
$2.45
|
|
|
$1.92
|
|
|
$1.62
|
|
|
Ver
|
|
|
$1.28
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
- STGP30M65DF2
- STMicroelectronics
-
1:
$3.18
-
980En existencias
|
N.º de artículo de Mouser
511-STGP30M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
|
|
980En existencias
|
|
|
$3.18
|
|
|
$1.39
|
|
|
$1.30
|
|
|
$1.16
|
|
|
Ver
|
|
|
$1.07
|
|
|
$1.00
|
|
|
$0.99
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|