|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
- STW7N95K3
- STMicroelectronics
-
1:
$6.93
-
574En existencias
|
N.º de artículo de Mouser
511-STW7N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
|
|
574En existencias
|
|
|
$6.93
|
|
|
$3.76
|
|
|
$2.86
|
|
|
$2.83
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
- STW88N65M5-4
- STMicroelectronics
-
1:
$13.76
-
166En existencias
|
N.º de artículo de Mouser
511-STW88N65M5-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
|
|
166En existencias
|
|
|
$13.76
|
|
|
$10.61
|
|
|
$9.25
|
|
|
$9.24
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
- STW9NK95Z
- STMicroelectronics
-
1:
$4.00
-
777En existencias
|
N.º de artículo de Mouser
511-STW9NK95Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
|
|
777En existencias
|
|
|
$4.00
|
|
|
$2.20
|
|
|
$1.51
|
|
|
$1.40
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
- STWA75N60M6
- STMicroelectronics
-
1:
$10.38
-
492En existencias
|
N.º de artículo de Mouser
511-STWA75N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
|
|
492En existencias
|
|
|
$10.38
|
|
|
$6.26
|
|
|
$4.99
|
|
|
$4.92
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
- STY105NM50N
- STMicroelectronics
-
1:
$25.10
-
186En existencias
|
N.º de artículo de Mouser
511-STY105NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
|
|
186En existencias
|
|
|
$25.10
|
|
|
$16.08
|
|
|
$15.09
|
|
|
$15.08
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
|
|
|
Transistores Darlington NPN General Purpose
- BD679A
- STMicroelectronics
-
1:
$0.97
-
5,477En existencias
|
N.º de artículo del Fabricante
BD679A
N.º de artículo de Mouser
511-BD679A
|
STMicroelectronics
|
Transistores Darlington NPN General Purpose
|
|
5,477En existencias
|
|
|
$0.97
|
|
|
$0.364
|
|
|
$0.295
|
|
|
$0.252
|
|
|
Ver
|
|
|
$0.235
|
|
|
$0.225
|
|
|
$0.204
|
|
|
$0.202
|
|
|
$0.191
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
SOT-32
|
NPN
|
|
|
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
$21.75
-
580En existencias
|
N.º de artículo de Mouser
511-PD55015TR-E
|
STMicroelectronics
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
580En existencias
|
|
|
$21.75
|
|
|
$16.32
|
|
|
$14.56
|
|
|
$14.13
|
|
Min.: 1
Mult.: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
N-Channel
|
|
|
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) RF Pwr Transistors LDMOST Plastic N Ch
- PD55025-E
- STMicroelectronics
-
1:
$30.96
-
189En existencias
|
N.º de artículo de Mouser
511-PD55025-E
|
STMicroelectronics
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) RF Pwr Transistors LDMOST Plastic N Ch
|
|
189En existencias
|
|
|
$30.96
|
|
|
$20.63
|
|
|
$20.62
|
|
|
$20.61
|
|
|
Ver
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13.5 A Zener SuperMESH
- STB14NK60ZT4
- STMicroelectronics
-
1:
$5.26
-
620En existencias
|
N.º de artículo de Mouser
511-STB14NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13.5 A Zener SuperMESH
|
|
620En existencias
|
|
|
$5.26
|
|
|
$3.51
|
|
|
$2.51
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)
- STB23NM50N
- STMicroelectronics
-
1:
$4.82
-
476En existencias
|
N.º de artículo de Mouser
511-STB23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)
|
|
476En existencias
|
|
|
$4.82
|
|
|
$3.77
|
|
|
$2.71
|
|
|
$2.64
|
|
|
$2.14
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 900V-5ohms Zener SuperMESH 2.1A
- STD2NK90Z-1
- STMicroelectronics
-
1:
$2.65
-
2,947En existencias
|
N.º de artículo de Mouser
511-STD2NK90Z-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 900V-5ohms Zener SuperMESH 2.1A
|
|
2,947En existencias
|
|
|
$2.65
|
|
|
$1.24
|
|
|
$1.07
|
|
|
$0.943
|
|
|
Ver
|
|
|
$0.829
|
|
|
$0.778
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
- STD5N62K3
- STMicroelectronics
-
1:
$1.77
-
1,691En existencias
|
N.º de artículo de Mouser
511-STD5N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
|
|
1,691En existencias
|
|
|
$1.77
|
|
|
$1.13
|
|
|
$0.756
|
|
|
$0.597
|
|
|
$0.472
|
|
|
Ver
|
|
|
$0.546
|
|
|
$0.471
|
|
|
$0.469
|
|
|
$0.468
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF27N60M2-EP
- STMicroelectronics
-
1:
$3.56
-
707En existencias
|
N.º de artículo de Mouser
511-STF27N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
707En existencias
|
|
|
$3.56
|
|
|
$1.80
|
|
|
$1.63
|
|
|
$1.33
|
|
|
Ver
|
|
|
$1.22
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
- STF6N65K3
- STMicroelectronics
-
1:
$3.18
-
795En existencias
|
N.º de artículo de Mouser
511-STF6N65K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
|
|
795En existencias
|
|
|
$3.18
|
|
|
$1.01
|
|
|
$1.00
|
|
|
$0.963
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
- STF7N60M2
- STMicroelectronics
-
1:
$1.71
-
1,994En existencias
|
N.º de artículo de Mouser
511-STF7N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
|
|
1,994En existencias
|
|
|
$1.71
|
|
|
$0.817
|
|
|
$0.729
|
|
|
$0.575
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.483
|
|
|
$0.438
|
|
|
$0.424
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 4.7 A MDmesh 2nd Gen
- STF7NM60N
- STMicroelectronics
-
1:
$2.25
-
575En existencias
|
N.º de artículo de Mouser
511-STF7NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 4.7 A MDmesh 2nd Gen
|
|
575En existencias
|
|
|
$2.25
|
|
|
$1.44
|
|
|
$1.34
|
|
|
$1.26
|
|
|
Ver
|
|
|
$1.25
|
|
|
$1.20
|
|
|
$1.17
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
- STF9NM60N
- STMicroelectronics
-
1:
$2.39
-
1,712En existencias
|
N.º de artículo de Mouser
511-STF9NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
|
|
1,712En existencias
|
|
|
$2.39
|
|
|
$1.19
|
|
|
$1.06
|
|
|
$0.92
|
|
|
Ver
|
|
|
$0.785
|
|
|
$0.71
|
|
|
$0.654
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs 10 A - 410 V Int Clamped IGBT
- STGB10NB37LZT4
- STMicroelectronics
-
1:
$2.63
-
898En existencias
|
N.º de artículo de Mouser
511-STGB10NB37LZT4
|
STMicroelectronics
|
IGBTs 10 A - 410 V Int Clamped IGBT
|
|
898En existencias
|
|
|
$2.63
|
|
|
$1.70
|
|
|
$1.21
|
|
|
$1.01
|
|
|
$0.868
|
|
|
Ver
|
|
|
$0.775
|
|
|
$0.771
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package
- STGB15M65DF2
- STMicroelectronics
-
1:
$2.46
-
1,457En existencias
|
N.º de artículo de Mouser
511-STGB15M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package
|
|
1,457En existencias
|
|
|
$2.46
|
|
|
$1.59
|
|
|
$1.09
|
|
|
$0.868
|
|
|
$0.735
|
|
|
Ver
|
|
|
$0.711
|
|
|
$0.699
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
- STGB30H60DLLFBAG
- STMicroelectronics
-
1:
$3.57
-
1,015En existencias
|
N.º de artículo de Mouser
511-STGB30H60DLLFBAG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
|
|
1,015En existencias
|
|
|
$3.57
|
|
|
$2.34
|
|
|
$1.63
|
|
|
$1.43
|
|
|
$1.23
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
IGBTs N-Ch 600 Volt 14 Amp
- STGB7NC60HDT4
- STMicroelectronics
-
1:
$2.91
-
1,181En existencias
|
N.º de artículo de Mouser
511-STGB7NC60HD
|
STMicroelectronics
|
IGBTs N-Ch 600 Volt 14 Amp
|
|
1,181En existencias
|
|
|
$2.91
|
|
|
$1.89
|
|
|
$1.31
|
|
|
$1.09
|
|
|
$0.957
|
|
|
$0.875
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
IGBTs N-Ch 1200 Volt 5 Amp
- STGD5NB120SZT4
- STMicroelectronics
-
1:
$2.37
-
1,438En existencias
|
N.º de artículo de Mouser
511-STGD5NB120SZ
|
STMicroelectronics
|
IGBTs N-Ch 1200 Volt 5 Amp
|
|
1,438En existencias
|
|
|
$2.37
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.828
|
|
|
$0.70
|
|
|
Ver
|
|
|
$0.769
|
|
|
$0.687
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
|
|
|
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
- STGIB15CH60S-L
- STMicroelectronics
-
1:
$14.08
-
121En existencias
|
N.º de artículo de Mouser
511-STGIB15CH60S-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
|
|
121En existencias
|
|
|
$14.08
|
|
|
$10.51
|
|
|
$7.32
|
|
|
$7.05
|
|
|
Ver
|
|
|
$7.04
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBTs 600V 20A High Speed Trench Gate IGBT
- STGP20H60DF
- STMicroelectronics
-
1:
$2.42
-
1,086En existencias
|
N.º de artículo de Mouser
511-STGP20H60DF
|
STMicroelectronics
|
IGBTs 600V 20A High Speed Trench Gate IGBT
|
|
1,086En existencias
|
|
|
$2.42
|
|
|
$1.19
|
|
|
$1.07
|
|
|
$0.852
|
|
|
Ver
|
|
|
$0.794
|
|
|
$0.726
|
|
|
$0.684
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
- STGWA20H65DFB2
- STMicroelectronics
-
1:
$3.34
-
950En existencias
|
N.º de artículo de Mouser
511-STGWA20H65DFB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
|
|
950En existencias
|
|
|
$3.34
|
|
|
$2.05
|
|
|
$1.41
|
|
|
$1.26
|
|
|
Ver
|
|
|
$1.13
|
|
|
$1.01
|
|
|
$0.995
|
|
|
$0.99
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|