|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7341GTRPBF
- Infineon Technologies
-
1:
$2.72
-
23,947En existencias
|
N.º de artículo de Mouser
942-IRF7341GTRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
23,947En existencias
|
|
|
$2.72
|
|
|
$1.57
|
|
|
$1.14
|
|
|
$0.962
|
|
|
Ver
|
|
|
$0.847
|
|
|
$0.907
|
|
|
$0.893
|
|
|
$0.847
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
55 V
|
5.1 A
|
65 mOhms, 65 mOhms
|
- 20 V, 20 V
|
1 V
|
29 nC
|
- 55 C
|
+ 175 C
|
2.4 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
- BSC060N10NS3 G
- Infineon Technologies
-
1:
$2.72
-
15,982En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC060N10NS3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
|
|
15,982En existencias
|
|
|
$2.72
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.987
|
|
|
$0.855
|
|
|
Ver
|
|
|
$0.914
|
|
|
$0.853
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
5.3 mOhms
|
- 20 V, 20 V
|
2 V
|
68 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7303TRPBFXTMA1
- Infineon Technologies
-
1:
$1.48
-
13,954En existencias
|
N.º de artículo de Mouser
726-IRF7303TRPBFXTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
13,954En existencias
|
|
|
$1.48
|
|
|
$0.933
|
|
|
$0.619
|
|
|
$0.484
|
|
|
$0.346
|
|
|
Ver
|
|
|
$0.44
|
|
|
$0.403
|
|
|
$0.315
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
2 Channel
|
30 V
|
5.3 A
|
50 mOhms
|
- 20 V, 20 V
|
1 V
|
25 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IR FET UP TO 60V
- IRF8714TRPBFXTMA1
- Infineon Technologies
-
1:
$0.93
-
8,375En existencias
|
N.º de artículo de Mouser
726-IRF8714TRPBFXTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IR FET UP TO 60V
|
|
8,375En existencias
|
|
|
$0.93
|
|
|
$0.575
|
|
|
$0.374
|
|
|
$0.288
|
|
|
$0.202
|
|
|
Ver
|
|
|
$0.259
|
|
|
$0.256
|
|
|
$0.197
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
1 Channel
|
30 V
|
14 A
|
8.7 mOhms
|
- 20 V, 20 V
|
2.35 V
|
8.1 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7313TRPBFXTMA1
- Infineon Technologies
-
1:
$1.27
-
8,539En existencias
|
N.º de artículo de Mouser
726-IRF7313TRPBFXTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
8,539En existencias
|
|
|
$1.27
|
|
|
$0.793
|
|
|
$0.522
|
|
|
$0.405
|
|
|
Ver
|
|
|
$0.29
|
|
|
$0.368
|
|
|
$0.336
|
|
|
$0.29
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
2 Channel
|
30 V
|
6.5 A
|
29 mOhms
|
- 20 V, 20 V
|
1 V
|
22 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7341TRPBFXTMA1
- Infineon Technologies
-
1:
$1.37
-
3,747En existencias
-
12,000Se espera el 19/11/2026
|
N.º de artículo de Mouser
726-IRF7341TRPBFXTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
3,747En existencias
12,000Se espera el 19/11/2026
|
|
|
$1.37
|
|
|
$0.819
|
|
|
$0.568
|
|
|
$0.443
|
|
|
Ver
|
|
|
$0.323
|
|
|
$0.402
|
|
|
$0.367
|
|
|
$0.323
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
2 Channel
|
55 V
|
4.7 A
|
50 mOhms
|
- 20 V, 20 V
|
1 V
|
24 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A DPAK-2
- IPD090N03LGATMA1
- Infineon Technologies
-
1:
$1.06
-
6,106En existencias
|
N.º de artículo de Mouser
726-IPD090N03LGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A DPAK-2
|
|
6,106En existencias
|
|
|
$1.06
|
|
|
$0.648
|
|
|
$0.459
|
|
|
$0.355
|
|
|
$0.284
|
|
|
Ver
|
|
|
$0.321
|
|
|
$0.25
|
|
|
$0.246
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
7.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
15 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL PCh -30V 4.9A
- IRF7316TRPBF
- Infineon Technologies
-
1:
$1.66
-
12,754En existencias
|
N.º de artículo de Mouser
942-IRF7316TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL PCh -30V 4.9A
|
|
12,754En existencias
|
|
|
$1.66
|
|
|
$1.05
|
|
|
$0.698
|
|
|
$0.548
|
|
|
$0.427
|
|
|
Ver
|
|
|
$0.50
|
|
|
$0.459
|
|
|
$0.421
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
2 Channel
|
30 V
|
4.9 A
|
76 mOhms
|
- 20 V, 20 V
|
1 V
|
23 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 24A 2.8mOhm 44nC Qg
- IRF8788TRPBF
- Infineon Technologies
-
1:
$1.53
-
12,906En existencias
|
N.º de artículo de Mouser
942-IRF8788TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 24A 2.8mOhm 44nC Qg
|
|
12,906En existencias
|
|
|
$1.53
|
|
|
$0.958
|
|
|
$0.677
|
|
|
$0.552
|
|
|
Ver
|
|
|
$0.44
|
|
|
$0.503
|
|
|
$0.475
|
|
|
$0.44
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
30 V
|
24 A
|
3.04 mOhms
|
- 20 V, 20 V
|
1.8 V
|
44 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 190A 1.95mOhm 57nC Qg
- IRLB3813PBF
- Infineon Technologies
-
1:
$2.48
-
2,427En existencias
-
4,000Se espera el 23/7/2026
|
N.º de artículo de Mouser
942-IRLB3813PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 190A 1.95mOhm 57nC Qg
|
|
2,427En existencias
4,000Se espera el 23/7/2026
|
|
|
$2.48
|
|
|
$1.25
|
|
|
$1.12
|
|
|
$0.894
|
|
|
Ver
|
|
|
$0.821
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
260 A
|
1.95 mOhms
|
- 20 V, 20 V
|
1.9 V
|
86 nC
|
- 55 C
|
+ 175 C
|
230 W
|
Enhancement
|
|
HEXFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7103TRPBFXTMA1
- Infineon Technologies
-
1:
$1.20
-
4,623En existencias
|
N.º de artículo de Mouser
726-IRF7103TRPBFXTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
4,623En existencias
|
|
|
$1.20
|
|
|
$0.751
|
|
|
$0.493
|
|
|
$0.382
|
|
|
$0.289
|
|
|
Ver
|
|
|
$0.346
|
|
|
$0.316
|
|
|
$0.269
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
2 Channel
|
50 V
|
3 A
|
130 mOhms
|
- 20 V, 20 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT PCh -30V -4.6A 70mOhm 27nC
- IRF7205TRPBF
- Infineon Technologies
-
1:
$1.26
-
20,028En existencias
|
N.º de artículo de Mouser
942-IRF7205TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT PCh -30V -4.6A 70mOhm 27nC
|
|
20,028En existencias
|
|
|
$1.26
|
|
|
$0.788
|
|
|
$0.519
|
|
|
$0.403
|
|
|
Ver
|
|
|
$0.288
|
|
|
$0.365
|
|
|
$0.334
|
|
|
$0.288
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
1 Channel
|
30 V
|
4.6 A
|
130 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL PCh -30V 3.6A
- IRF7306TRPBF
- Infineon Technologies
-
1:
$1.53
-
4,063En existencias
-
4,000Se espera el 6/5/2027
|
N.º de artículo de Mouser
942-IRF7306TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL PCh -30V 3.6A
|
|
4,063En existencias
4,000Se espera el 6/5/2027
|
|
|
$1.53
|
|
|
$0.953
|
|
|
$0.64
|
|
|
$0.501
|
|
|
Ver
|
|
|
$0.377
|
|
|
$0.456
|
|
|
$0.418
|
|
|
$0.377
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
2 Channel
|
30 V
|
3.6 A
|
100 mOhms
|
- 20 V, 20 V
|
1 V
|
16.7 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 4.0A
- IRF7309TRPBF
- Infineon Technologies
-
1:
$1.37
-
6,768En existencias
-
16,000En pedido
|
N.º de artículo de Mouser
942-IRF7309TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 4.0A
|
|
6,768En existencias
16,000En pedido
Existencias:
6,768 Se puede enviar inmediatamente
En pedido:
4,000 Se espera el 9/7/2026
12,000 Se espera el 16/7/2026
Plazo de entrega de fábrica:
16 Semanas
|
|
|
$1.37
|
|
|
$0.856
|
|
|
$0.568
|
|
|
$0.442
|
|
|
Ver
|
|
|
$0.323
|
|
|
$0.402
|
|
|
$0.368
|
|
|
$0.323
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel, P-Channel
|
2 Channel
|
30 V
|
3.5 A, 4.7 A
|
80 mOhms
|
- 20 V, 20 V
|
1 V
|
16.7 nC
|
- 55 C
|
+ 150 C
|
1.4 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 6.5A
- IRF7319TRPBF
- Infineon Technologies
-
1:
$1.79
-
10,855En existencias
|
N.º de artículo de Mouser
942-IRF7319TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 6.5A
|
|
10,855En existencias
|
|
|
$1.79
|
|
|
$1.15
|
|
|
$0.796
|
|
|
$0.632
|
|
|
Ver
|
|
|
$0.473
|
|
|
$0.578
|
|
|
$0.532
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel, P-Channel
|
2 Channel
|
30 V
|
6.5 A
|
46 mOhms
|
- 20 V, 20 V
|
1 V
|
22 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 7.3A
- IRF7389TRPBF
- Infineon Technologies
-
1:
$1.53
-
5,648En existencias
|
N.º de artículo de Mouser
942-IRF7389TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 7.3A
|
|
5,648En existencias
|
|
|
$1.53
|
|
|
$0.968
|
|
|
$0.643
|
|
|
$0.503
|
|
|
Ver
|
|
|
$0.379
|
|
|
$0.458
|
|
|
$0.421
|
|
|
$0.379
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel, P-Channel
|
2 Channel
|
30 V
|
5.3 A, 7.3 A
|
46 mOhms
|
- 20 V, 20 V
|
1 V
|
22 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT PCh -30V -10A 20mOhm 61nC
- IRF7416TRPBF
- Infineon Technologies
-
1:
$1.61
-
7,556En existencias
-
20,000En pedido
|
N.º de artículo de Mouser
942-IRF7416TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT PCh -30V -10A 20mOhm 61nC
|
|
7,556En existencias
20,000En pedido
Existencias:
7,556 Se puede enviar inmediatamente
En pedido:
12,000 Se espera el 23/7/2026
8,000 Se espera el 17/9/2026
Plazo de entrega de fábrica:
16 Semanas
|
|
|
$1.61
|
|
|
$0.991
|
|
|
$0.68
|
|
|
$0.533
|
|
|
Ver
|
|
|
$0.407
|
|
|
$0.486
|
|
|
$0.446
|
|
|
$0.407
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
1 Channel
|
30 V
|
10 A
|
35 mOhms
|
- 20 V, 20 V
|
1 V
|
61 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 20A 4mOhm 34nC
- IRF7832TRPBF
- Infineon Technologies
-
1:
$1.69
-
17,482En existencias
|
N.º de artículo de Mouser
942-IRF7832TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 20A 4mOhm 34nC
|
|
17,482En existencias
|
|
|
$1.69
|
|
|
$1.09
|
|
|
$0.733
|
|
|
$0.576
|
|
|
Ver
|
|
|
$0.467
|
|
|
$0.523
|
|
|
$0.484
|
|
|
$0.467
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
30 V
|
20 A
|
3.7 mOhms
|
- 20 V, 20 V
|
2.32 V
|
34 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL NCh 30V 9.1A
- IRF7907TRPBF
- Infineon Technologies
-
1:
$1.56
-
11,181En existencias
|
N.º de artículo de Mouser
942-IRF7907TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL NCh 30V 9.1A
|
|
11,181En existencias
|
|
|
$1.56
|
|
|
$0.985
|
|
|
$0.655
|
|
|
$0.513
|
|
|
Ver
|
|
|
$0.388
|
|
|
$0.467
|
|
|
$0.429
|
|
|
$0.388
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
30 V
|
9.1 A, 11 A
|
17.1 mOhms, 11.5 mOhms
|
- 20 V, 20 V
|
1.8 V
|
6.7 nC, 14 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 21A 3.5mOhm 20nC Qg
- IRF8734TRPBF
- Infineon Technologies
-
1:
$1.47
-
4,146En existencias
-
4,000Se espera el 3/9/2026
|
N.º de artículo de Mouser
942-IRF8734TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 21A 3.5mOhm 20nC Qg
|
|
4,146En existencias
4,000Se espera el 3/9/2026
|
|
|
$1.47
|
|
|
$0.908
|
|
|
$0.612
|
|
|
$0.48
|
|
|
Ver
|
|
|
$0.357
|
|
|
$0.437
|
|
|
$0.40
|
|
|
$0.357
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
30 V
|
21 A
|
5.1 mOhms
|
- 20 V, 20 V
|
1.8 V
|
20 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 18A 4.8mOhm 17nC Qg
- IRF8736TRPBF
- Infineon Technologies
-
1:
$1.11
-
38,741En existencias
-
52,000En pedido
|
N.º de artículo de Mouser
942-IRF8736TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 18A 4.8mOhm 17nC Qg
|
|
38,741En existencias
52,000En pedido
Existencias:
38,741 Se puede enviar inmediatamente
En pedido:
36,000 Se espera el 18/6/2026
16,000 Se espera el 28/1/2027
Plazo de entrega de fábrica:
26 Semanas
|
|
|
$1.11
|
|
|
$0.643
|
|
|
$0.451
|
|
|
$0.349
|
|
|
$0.242
|
|
|
Ver
|
|
|
$0.316
|
|
|
$0.288
|
|
|
$0.24
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
30 V
|
18 A
|
6.8 mOhms
|
- 20 V, 20 V
|
1.8 V
|
17 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 3.5A
- IRF9952TRPBF
- Infineon Technologies
-
1:
$1.27
-
14,798En existencias
|
N.º de artículo de Mouser
942-IRF9952TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT DUAL N/PCh 30V 3.5A
|
|
14,798En existencias
|
|
|
$1.27
|
|
|
$0.794
|
|
|
$0.523
|
|
|
$0.406
|
|
|
Ver
|
|
|
$0.29
|
|
|
$0.368
|
|
|
$0.336
|
|
|
$0.29
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel, P-Channel
|
2 Channel
|
30 V
|
3.5 A
|
150 mOhms
|
- 20 V, 20 V
|
1 V
|
14 nC, 12 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 5.2A 28mOhm 3.6nC Qg
- IRLML0030TRPBF
- Infineon Technologies
-
1:
$0.54
-
133,886En existencias
|
N.º de artículo de Mouser
942-IRLML0030TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 30V 5.2A 28mOhm 3.6nC Qg
|
|
133,886En existencias
|
|
|
$0.54
|
|
|
$0.331
|
|
|
$0.211
|
|
|
$0.158
|
|
|
$0.119
|
|
|
Ver
|
|
|
$0.141
|
|
|
$0.108
|
|
|
$0.092
|
|
|
$0.088
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
30 V
|
5.3 A
|
27 mOhms
|
- 20 V, 20 V
|
1.3 V
|
2.6 nC
|
- 55 C
|
+ 150 C
|
1.3 W
|
Enhancement
|
|
HEXFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -1.5A SOT-23-3
- BSS315PH6327XTSA1
- Infineon Technologies
-
1:
$0.44
-
900En existencias
-
27,000En pedido
|
N.º de artículo de Mouser
726-BSS315PH6327
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -1.5A SOT-23-3
|
|
900En existencias
27,000En pedido
|
|
|
$0.44
|
|
|
$0.271
|
|
|
$0.172
|
|
|
$0.128
|
|
|
$0.095
|
|
|
Ver
|
|
|
$0.114
|
|
|
$0.086
|
|
|
$0.073
|
|
|
$0.067
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
P-Channel
|
1 Channel
|
30 V
|
1.5 A
|
113 mOhms
|
- 20 V, 20 V
|
2 V
|
2.3 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS Dual power MOSFET 30V
- ISA220280C03LMDSXTMA1
- Infineon Technologies
-
1:
$0.97
-
418En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISA220280C03LMDS
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS Dual power MOSFET 30V
|
|
418En existencias
|
|
|
$0.97
|
|
|
$0.601
|
|
|
$0.391
|
|
|
$0.30
|
|
|
$0.207
|
|
|
Ver
|
|
|
$0.271
|
|
|
$0.246
|
|
|
$0.199
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
DSO-8
|
N-Channel, P-Channel
|
2 Channel
|
30 V
|
8.1 A, 8.4 A
|
22 mOhms, 28 mOhms
|
- 20 V, 20 V
|
2.7 V
|
8.9 nC, 7.2 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|