|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R750P7ATMA1
- Infineon Technologies
-
1:
$2.03
-
4,512En existencias
|
N.º de artículo de Mouser
726-IPD80R750P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,512En existencias
|
|
|
$2.03
|
|
|
$1.30
|
|
|
$0.87
|
|
|
$0.689
|
|
|
$0.568
|
|
|
Ver
|
|
|
$0.631
|
|
|
$0.558
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
- 20 V, 20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
51 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.67
-
8,720En existencias
|
N.º de artículo de Mouser
726-IPD80R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
8,720En existencias
|
|
|
$1.67
|
|
|
$1.06
|
|
|
$0.705
|
|
|
$0.554
|
|
|
$0.454
|
|
|
Ver
|
|
|
$0.506
|
|
|
$0.427
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1 Ohms
|
- 20 V, 20 V
|
2.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R900P7AKMA1
- Infineon Technologies
-
1:
$1.89
-
1,441En existencias
|
N.º de artículo de Mouser
726-IPU80R900P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,441En existencias
|
|
|
$1.89
|
|
|
$0.846
|
|
|
$0.759
|
|
|
$0.634
|
|
|
Ver
|
|
|
$0.575
|
|
|
$0.536
|
|
|
$0.507
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R600P7ATMA1
- Infineon Technologies
-
1:
$2.17
-
1,419En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPN80R600P7ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,419En existencias
|
|
|
$2.17
|
|
|
$1.34
|
|
|
$0.662
|
|
|
$0.614
|
|
|
$0.614
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 30 V, 30 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
7.4 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R360P7ATMA1
- Infineon Technologies
-
1:
$3.15
-
4,948En existencias
|
N.º de artículo de Mouser
726-IPD80R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,948En existencias
|
|
|
$3.15
|
|
|
$2.00
|
|
|
$1.41
|
|
|
$1.14
|
|
|
$1.10
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
84 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R280P7ATMA1
- Infineon Technologies
-
1:
$3.73
-
5,339En existencias
|
N.º de artículo de Mouser
726-IPD80R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,339En existencias
|
|
|
$3.73
|
|
|
$2.36
|
|
|
$1.72
|
|
|
$1.40
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R2K4P7ATMA1
- Infineon Technologies
-
1:
$1.30
-
9,180En existencias
|
N.º de artículo de Mouser
726-IPD80R2K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
9,180En existencias
|
|
|
$1.30
|
|
|
$0.818
|
|
|
$0.539
|
|
|
$0.419
|
|
|
$0.338
|
|
|
Ver
|
|
|
$0.381
|
|
|
$0.322
|
|
|
$0.302
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R600P7ATMA1
- Infineon Technologies
-
1:
$2.30
-
2,284En existencias
|
N.º de artículo de Mouser
726-IPD80R600P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,284En existencias
|
|
|
$2.30
|
|
|
$1.48
|
|
|
$1.01
|
|
|
$0.797
|
|
|
$0.732
|
|
|
$0.665
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP80R280P7XKSA1
- Infineon Technologies
-
1:
$3.67
-
291En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPP80R280P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
291En existencias
|
|
|
$3.67
|
|
|
$2.02
|
|
|
$1.94
|
|
|
$1.48
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPW80R280P7XKSA1
- Infineon Technologies
-
1:
$4.32
-
213En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW80R280P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
213En existencias
|
|
|
$4.32
|
|
|
$2.38
|
|
|
$1.95
|
|
|
$1.63
|
|
|
$1.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.41
-
1,007En existencias
-
2,500Se espera el 28/5/2026
|
N.º de artículo de Mouser
726-IPD80R2K0P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,007En existencias
2,500Se espera el 28/5/2026
|
|
|
$1.41
|
|
|
$0.886
|
|
|
$0.586
|
|
|
$0.457
|
|
|
$0.37
|
|
|
Ver
|
|
|
$0.447
|
|
|
$0.337
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
1.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.22
-
2,170En existencias
-
2,500Se espera el 15/10/2026
|
N.º de artículo de Mouser
726-IPD80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,170En existencias
2,500Se espera el 15/10/2026
|
|
|
$1.22
|
|
|
$0.62
|
|
|
$0.454
|
|
|
$0.389
|
|
|
$0.288
|
|
|
Ver
|
|
|
$0.342
|
|
|
$0.254
|
|
|
$0.25
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.04
-
4,671En existencias
-
9,000Se espera el 10/12/2026
|
N.º de artículo de Mouser
726-IPN80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,671En existencias
9,000Se espera el 10/12/2026
|
|
|
$1.04
|
|
|
$0.625
|
|
|
$0.422
|
|
|
$0.325
|
|
|
$0.253
|
|
|
Ver
|
|
|
$0.293
|
|
|
$0.233
|
|
|
$0.22
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
3.8 Ohms
|
- 20 V, 20 V
|
2.5 V
|
4 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R1K4P7XKSA1
- Infineon Technologies
-
1:
$1.88
-
703En existencias
|
N.º de artículo de Mouser
726-IPA80R1K4P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
703En existencias
|
|
|
$1.88
|
|
|
$0.897
|
|
|
$0.801
|
|
|
$0.666
|
|
|
Ver
|
|
|
$0.532
|
|
|
$0.502
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
10 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R280P7XKSA1
- Infineon Technologies
-
1:
$3.97
-
856En existencias
|
N.º de artículo de Mouser
726-IPA80R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
856En existencias
|
|
|
$3.97
|
|
|
$2.01
|
|
|
$1.82
|
|
|
$1.48
|
|
|
$1.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R360P7XKSA1
- Infineon Technologies
-
1:
$3.26
-
803En existencias
|
N.º de artículo de Mouser
726-IPA80R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
803En existencias
|
|
|
$3.26
|
|
|
$1.63
|
|
|
$1.47
|
|
|
$1.18
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R450P7XKSA1
- Infineon Technologies
-
1:
$2.69
-
1,592En existencias
|
N.º de artículo de Mouser
726-IPA80R450P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,592En existencias
|
|
|
$2.69
|
|
|
$1.39
|
|
|
$1.22
|
|
|
$0.998
|
|
|
Ver
|
|
|
$0.934
|
|
|
$0.873
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R600P7XKSA1
- Infineon Technologies
-
1:
$2.47
-
901En existencias
|
N.º de artículo de Mouser
726-IPA80R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
901En existencias
|
|
|
$2.47
|
|
|
$1.58
|
|
|
$1.10
|
|
|
$0.926
|
|
|
Ver
|
|
|
$0.82
|
|
|
$0.776
|
|
|
$0.737
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R900P7XKSA1
- Infineon Technologies
-
1:
$2.12
-
266Se espera el 20/8/2026
|
N.º de artículo de Mouser
726-IPA80R900P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
266Se espera el 20/8/2026
|
|
|
$2.12
|
|
|
$1.23
|
|
|
$0.932
|
|
|
$0.745
|
|
|
Ver
|
|
|
$0.613
|
|
|
$0.593
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R1K4P7ATMA1
- Infineon Technologies
-
1:
$1.57
-
521En existencias
-
2,500Se espera el 17/12/2026
|
N.º de artículo de Mouser
726-IPD80R1K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
521En existencias
2,500Se espera el 17/12/2026
|
|
|
$1.57
|
|
|
$0.991
|
|
|
$0.659
|
|
|
$0.516
|
|
|
$0.42
|
|
|
Ver
|
|
|
$0.471
|
|
|
$0.391
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
10 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice
- IPD80R3K3P7ATMA1
- Infineon Technologies
-
1:
$1.32
-
3,040En existencias
|
N.º de artículo de Mouser
726-IPD80R3K3P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice
|
|
3,040En existencias
|
|
|
$1.32
|
|
|
$0.672
|
|
|
$0.455
|
|
|
$0.366
|
|
|
$0.309
|
|
|
$0.272
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.9 A
|
2.8 Ohms
|
- 20 V, 20 V
|
2.5 V
|
5.8 nC
|
- 55 C
|
+ 150 C
|
18 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R450P7ATMA1
- Infineon Technologies
-
1:
$2.69
-
904En existencias
-
7,500Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPD80R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
904En existencias
7,500Se espera el 2/7/2026
|
|
|
$2.69
|
|
|
$1.71
|
|
|
$1.19
|
|
|
$0.95
|
|
|
$0.879
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 50 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R2K4P7ATMA1
- Infineon Technologies
-
1:
$1.21
-
969En existencias
-
3,000Se espera el 3/12/2026
|
N.º de artículo de Mouser
726-IPN80R2K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
969En existencias
3,000Se espera el 3/12/2026
|
|
|
$1.21
|
|
|
$0.758
|
|
|
$0.498
|
|
|
$0.386
|
|
|
$0.303
|
|
|
Ver
|
|
|
$0.35
|
|
|
$0.28
|
|
|
$0.273
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
- 30 V, 30 V
|
3.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R4K5P7AKMA1
- Infineon Technologies
-
1:
$1.15
-
2,996En existencias
|
N.º de artículo de Mouser
726-IPU80R4K5P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,996En existencias
|
|
|
$1.15
|
|
|
$0.493
|
|
|
$0.438
|
|
|
$0.36
|
|
|
Ver
|
|
|
$0.326
|
|
|
$0.305
|
|
|
$0.267
|
|
|
$0.252
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R900P7ATMA1
- Infineon Technologies
-
1:
$1.88
-
7,500Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IPD80R900P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
7,500Se espera el 1/6/2026
|
|
|
$1.88
|
|
|
$1.20
|
|
|
$0.802
|
|
|
$0.634
|
|
|
$0.512
|
|
|
Ver
|
|
|
$0.579
|
|
|
$0.503
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|