|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 100mOhm 3V
- DMN10H100SK3-13
- Diodes Incorporated
-
1:
$1.37
-
2,400En existencias
|
N.º de artículo de Mouser
621-DMN10H100SK3-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 100mOhm 3V
|
|
2,400En existencias
|
|
|
$1.37
|
|
|
$0.835
|
|
|
$0.57
|
|
|
$0.444
|
|
|
$0.357
|
|
|
Ver
|
|
|
$0.403
|
|
|
$0.317
|
|
|
$0.293
|
|
|
$0.284
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
18 A
|
100 mOhms
|
- 20 V, 20 V
|
1 V
|
25.2 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A
- DMN4027SSD-13
- Diodes Incorporated
-
1:
$1.54
-
4,693En existencias
|
N.º de artículo de Mouser
522-DMN4027SSD-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A
|
|
4,693En existencias
|
|
|
$1.54
|
|
|
$0.97
|
|
|
$0.644
|
|
|
$0.504
|
|
|
$0.459
|
|
|
$0.457
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
40 V
|
5.4 A
|
27 mOhms
|
- 20 V, 20 V
|
1 V
|
6.3 nC
|
- 55 C
|
+ 150 C
|
1.25 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A
- DMN4034SSD-13
- Diodes Incorporated
-
1:
$1.76
-
7,440En existencias
|
N.º de artículo de Mouser
522-DMN4034SSD-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A
|
|
7,440En existencias
|
|
|
$1.76
|
|
|
$1.12
|
|
|
$0.745
|
|
|
$0.587
|
|
|
$0.536
|
|
|
$0.48
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
40 V
|
4.8 A
|
34 mOhms
|
- 20 V, 20 V
|
1 V
|
4.9 nC
|
- 55 C
|
+ 150 C
|
1.25 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A
- DMN6066SSD-13
- Diodes Incorporated
-
1:
$1.09
-
12,468En existencias
-
5,000Se espera el 12/2/2027
|
N.º de artículo de Mouser
522-DMN6066SSD-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A
|
|
12,468En existencias
5,000Se espera el 12/2/2027
|
|
|
$1.09
|
|
|
$0.672
|
|
|
$0.443
|
|
|
$0.348
|
|
|
$0.298
|
|
|
$0.269
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
60 V
|
3.3 A
|
48 mOhms
|
- 20 V, 20 V
|
1 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
1.25 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 41V-60V SOT223 TUBE 4K
- DMN6068SE-13
- Diodes Incorporated
-
1:
$0.75
-
46,915En existencias
-
32,000Se espera el 5/10/2026
|
N.º de artículo de Mouser
522-DMN6068SE-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 41V-60V SOT223 TUBE 4K
|
|
46,915En existencias
32,000Se espera el 5/10/2026
|
|
|
$0.75
|
|
|
$0.462
|
|
|
$0.297
|
|
|
$0.226
|
|
|
Ver
|
|
|
$0.175
|
|
|
$0.203
|
|
|
$0.197
|
|
|
$0.175
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
60 V
|
5.6 A
|
68 mOhms
|
- 20 V, 20 V
|
1 V
|
10.3 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
- DMN2230UQ-7
- Diodes Incorporated
-
1:
$0.65
-
13,026En existencias
|
N.º de artículo de Mouser
621-DMN2230UQ-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
|
|
13,026En existencias
|
|
|
$0.65
|
|
|
$0.402
|
|
|
$0.257
|
|
|
$0.194
|
|
|
$0.148
|
|
|
Ver
|
|
|
$0.174
|
|
|
$0.135
|
|
|
$0.116
|
|
|
$0.115
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
20 V
|
2 A
|
110 mOhms
|
- 12 V, 12 V
|
500 mV
|
2.3 nC
|
- 55 C
|
+ 150 C
|
600 mW
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56p
- DMN53D0LW-7
- Diodes Incorporated
-
1:
$0.31
-
46,369En existencias
|
N.º de artículo de Mouser
621-DMN53D0LW-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56p
|
|
46,369En existencias
|
|
|
$0.31
|
|
|
$0.193
|
|
|
$0.126
|
|
|
$0.097
|
|
|
$0.074
|
|
|
Ver
|
|
|
$0.085
|
|
|
$0.062
|
|
Min.: 1
Mult.: 1
Máx.: 6,000
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-323-3
|
N-Channel
|
1 Channel
|
50 V
|
360 mA
|
2 Ohms
|
- 20 V, 20 V
|
800 mV
|
1.2 nC
|
- 55 C
|
+ 150 C
|
420 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Ch Enh FET 20Vgss 0.8W 600pF
- DMN6075S-7
- Diodes Incorporated
-
1:
$0.52
-
59,276En existencias
-
312,000En pedido
|
N.º de artículo de Mouser
621-DMN6075S-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Ch Enh FET 20Vgss 0.8W 600pF
|
|
59,276En existencias
312,000En pedido
Existencias:
59,276 Se puede enviar inmediatamente
En pedido:
186,000 Se espera el 21/8/2026
126,000 Se espera el 15/1/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.52
|
|
|
$0.343
|
|
|
$0.217
|
|
|
$0.145
|
|
|
$0.128
|
|
|
$0.093
|
|
Min.: 1
Mult.: 1
Máx.: 3,000
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
60 V
|
2.5 A
|
85 mOhms
|
- 20 V, 20 V
|
1 V
|
12.3 nC
|
- 55 C
|
+ 150 C
|
1.15 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V Dual N-Ch Enh 200mOhm 8V VGSS
- DMN2300UFL4-7
- Diodes Incorporated
-
1:
$0.64
-
4,075En existencias
|
N.º de artículo de Mouser
522-DMN2300UFL4-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V Dual N-Ch Enh 200mOhm 8V VGSS
|
|
4,075En existencias
|
|
|
$0.64
|
|
|
$0.394
|
|
|
$0.252
|
|
|
$0.191
|
|
|
$0.141
|
|
|
Ver
|
|
|
$0.17
|
|
|
$0.129
|
|
|
$0.122
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
X2-DFN1310-6
|
N-Channel
|
2 Channel
|
20 V
|
2.11 A
|
195 mOhms
|
- 8 V, 8 V
|
450 mV
|
1.6 nC
|
- 55 C
|
+ 150 C
|
530 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 31V to 99V 60V 120mOhm 606pF
- DMN6070SFCL-7
- Diodes Incorporated
-
1:
$0.72
-
4,071En existencias
|
N.º de artículo de Mouser
621-DMN6070SFCL-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 31V to 99V 60V 120mOhm 606pF
|
|
4,071En existencias
|
|
|
$0.72
|
|
|
$0.44
|
|
|
$0.287
|
|
|
$0.218
|
|
|
$0.174
|
|
|
Ver
|
|
|
$0.193
|
|
|
$0.148
|
|
|
$0.145
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
X1-DFN1616-6
|
N-Channel
|
1 Channel
|
60 V
|
2.5 A
|
120 mOhms
|
- 20 V, 20 V
|
3 V
|
12.3 nC
|
- 55 C
|
+ 150 C
|
1.8 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
- DMN2028USS-13
- Diodes Incorporated
-
1:
$1.03
-
1,342En existencias
-
2,500Se espera el 7/8/2026
|
N.º de artículo de Mouser
522-DMN2028USS-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
|
|
1,342En existencias
2,500Se espera el 7/8/2026
|
|
|
$1.03
|
|
|
$0.642
|
|
|
$0.419
|
|
|
$0.322
|
|
|
$0.254
|
|
|
Ver
|
|
|
$0.291
|
|
|
$0.225
|
|
|
$0.218
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
20 V
|
9.8 A
|
20 mOhms
|
- 12 V, 12 V
|
600 mV
|
11.6 nC
|
- 55 C
|
+ 150 C
|
1.56 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A
- DMN2300UFB4-7B
- Diodes Incorporated
-
1:
$0.47
-
21,727En existencias
-
20,000Se espera el 15/7/2026
|
N.º de artículo de Mouser
522-DMN2300UFB4-7B
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A
|
|
21,727En existencias
20,000Se espera el 15/7/2026
|
|
|
$0.47
|
|
|
$0.307
|
|
|
$0.194
|
|
|
$0.13
|
|
|
$0.109
|
|
|
$0.109
|
|
Min.: 1
Mult.: 1
Máx.: 1,720
:
10,000
|
|
|
Si
|
SMD/SMT
|
X2-DFN1006-3
|
N-Channel
|
1 Channel
|
20 V
|
1.3 A
|
175 mOhms
|
- 8 V, 8 V
|
450 mV
|
1.6 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A
- DMN4034SSS-13
- Diodes Incorporated
-
1:
$1.33
-
1,682En existencias
-
2,500Se espera el 5/6/2026
|
N.º de artículo de Mouser
522-DMN4034SSS-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A
|
|
1,682En existencias
2,500Se espera el 5/6/2026
|
|
|
$1.33
|
|
|
$0.836
|
|
|
$0.551
|
|
|
$0.429
|
|
|
$0.346
|
|
|
Ver
|
|
|
$0.388
|
|
|
$0.311
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
40 V
|
5.4 A
|
34 mOhms
|
- 20 V, 20 V
|
1 V
|
4.9 nC
|
- 55 C
|
+ 150 C
|
1.56 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 12V Enh Mode FET
- DMN1019UVT-7
- Diodes Incorporated
-
1:
$0.99
-
201En existencias
-
33,000En pedido
|
N.º de artículo de Mouser
621-DMN1019UVT-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 12V Enh Mode FET
|
|
201En existencias
33,000En pedido
Existencias:
201 Se puede enviar inmediatamente
En pedido:
18,000 Se espera el 9/7/2026
15,000 Se espera el 26/2/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.99
|
|
|
$0.659
|
|
|
$0.419
|
|
|
$0.277
|
|
|
$0.22
|
|
|
$0.147
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSOT-26-6
|
N-Channel
|
1 Channel
|
12 V
|
10.7 A
|
10 mOhms
|
- 8 V, 8 V
|
350 mV
|
50.4 nC
|
- 55 C
|
+ 150 C
|
1.73 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 20Vgss 549pF 10nC
- DMN10H120SE-13
- Diodes Incorporated
-
1:
$0.95
-
20En existencias
-
5,000Se espera el 15/6/2026
|
N.º de artículo de Mouser
621-DMN10H120SE-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 20Vgss 549pF 10nC
|
|
20En existencias
5,000Se espera el 15/6/2026
|
|
|
$0.95
|
|
|
$0.716
|
|
|
$0.459
|
|
|
$0.354
|
|
|
$0.321
|
|
|
$0.284
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
1 Channel
|
100 V
|
3.6 A
|
110 mOhms
|
- 20 V, 20 V
|
1.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 220mOhm 16Vgs
- DMN10H220LVT-7
- Diodes Incorporated
-
1:
$0.90
-
425En existencias
|
N.º de artículo de Mouser
621-DMN10H220LVT-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch Enh FET 220mOhm 16Vgs
|
|
425En existencias
|
|
|
$0.90
|
|
|
$0.559
|
|
|
$0.363
|
|
|
$0.278
|
|
|
$0.214
|
|
|
Ver
|
|
|
$0.25
|
|
|
$0.197
|
|
|
$0.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSOT-26-6
|
N-Channel
|
1 Channel
|
100 V
|
2.24 A
|
250 mOhms
|
- 16 V, 16 V
|
1 V
|
8.3 nC
|
- 55 C
|
+ 150 C
|
1.67 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Enh Mode FET 130Vdss 20Vgss
- DMN13H750S-7
- Diodes Incorporated
-
1:
$0.90
-
5,353En existencias
-
9,000En pedido
|
N.º de artículo de Mouser
621-DMN13H750S-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Enh Mode FET 130Vdss 20Vgss
|
|
5,353En existencias
9,000En pedido
|
|
|
$0.90
|
|
|
$0.559
|
|
|
$0.363
|
|
|
$0.278
|
|
|
$0.249
|
|
|
Ver
|
|
|
$0.25
|
|
|
$0.217
|
|
|
$0.20
|
|
|
$0.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
130 V
|
1 A
|
750 mOhms
|
- 20 V, 20 V
|
2 V
|
5.6 nC
|
- 55 C
|
+ 150 C
|
1.26 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A
- DMN15H310SE-13
- Diodes Incorporated
-
1:
$1.66
-
436En existencias
|
N.º de artículo de Mouser
621-DMN15H310SE-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A
|
|
436En existencias
|
|
|
$1.66
|
|
|
$1.02
|
|
|
$0.726
|
|
|
$0.585
|
|
|
$0.535
|
|
|
$0.502
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
150 V
|
2 A
|
178 mOhms
|
- 20 V, 20 V
|
1 V
|
8.7 nC
|
- 55 C
|
+ 150 C
|
1.9 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
- DMN3008SFG-7
- Diodes Incorporated
-
1:
$1.07
-
3,375En existencias
|
N.º de artículo de Mouser
621-DMN3008SFG-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
|
|
3,375En existencias
|
|
|
$1.07
|
|
|
$0.669
|
|
|
$0.438
|
|
|
$0.339
|
|
|
$0.271
|
|
|
Ver
|
|
|
$0.307
|
|
|
$0.252
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
PowerDI3333-8
|
N-Channel
|
1 Channel
|
30 V
|
17.6 A
|
4.6 mOhms
|
- 20 V, 20 V
|
2.3 V
|
41 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
PowerDI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF
- DMN3016LDN-7
- Diodes Incorporated
-
1:
$0.90
-
30En existencias
-
3,000Se espera el 12/8/2026
|
N.º de artículo de Mouser
621-DMN3016LDN-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF
|
|
30En existencias
3,000Se espera el 12/8/2026
|
|
|
$0.90
|
|
|
$0.559
|
|
|
$0.363
|
|
|
$0.278
|
|
|
$0.214
|
|
|
Ver
|
|
|
$0.25
|
|
|
$0.197
|
|
|
$0.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
V-DFN3030-8
|
N-Channel
|
2 Channel
|
30 V
|
7.3 A
|
24 mOhms, 24 mOhms
|
- 20 V, 20 V
|
1.4 V
|
25.1 nC
|
- 55 C
|
+ 150 C
|
1.6 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
- DMN3035LWN-7
- Diodes Incorporated
-
1:
$0.83
-
3,245En existencias
|
N.º de artículo de Mouser
621-DMN3035LWN-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
|
|
3,245En existencias
|
|
|
$0.83
|
|
|
$0.513
|
|
|
$0.332
|
|
|
$0.253
|
|
|
$0.224
|
|
|
Ver
|
|
|
$0.228
|
|
|
$0.178
|
|
|
$0.172
|
|
|
$0.16
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
V-DFN3020-8
|
N-Channel
|
2 Channel
|
30 V
|
5.5 A
|
45 mOhms, 45 mOhms
|
- 20 V, 20 V
|
1 V
|
9.9 nC
|
- 55 C
|
+ 150 C
|
1.78 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Ch Enh FET 12Vgss 0.76W 676pF
- DMN3053L-7
- Diodes Incorporated
-
1:
$0.54
-
359En existencias
-
6,000Se espera el 23/11/2026
|
N.º de artículo de Mouser
621-DMN3053L-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Ch Enh FET 12Vgss 0.76W 676pF
|
|
359En existencias
6,000Se espera el 23/11/2026
|
|
|
$0.54
|
|
|
$0.331
|
|
|
$0.211
|
|
|
$0.159
|
|
|
$0.142
|
|
|
$0.117
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
30 V
|
4 A
|
45 mOhms
|
- 12 V, 12 V
|
600 mV
|
17.2 nC
|
- 55 C
|
+ 150 C
|
1.2 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Enh Mode FET 300Vds 20Vgs FET
- DMN30H4D0LFDE-7
- Diodes Incorporated
-
1:
$0.81
-
337En existencias
-
8,772En pedido
|
N.º de artículo de Mouser
621-DMN30H4D0LFDE-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Enh Mode FET 300Vds 20Vgs FET
|
|
337En existencias
8,772En pedido
Existencias:
337 Se puede enviar inmediatamente
En pedido:
5,772 Se espera el 15/1/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.81
|
|
|
$0.502
|
|
|
$0.325
|
|
|
$0.249
|
|
|
$0.224
|
|
|
$0.174
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
DFN-2020-6
|
N-Channel
|
1 Channel
|
300 V
|
550 mA
|
2.3 Ohms
|
- 20 V, 20 V
|
1 V
|
7.6 nC
|
- 55 C
|
+ 150 C
|
1.98 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
- DMN4026SK3-13
- Diodes Incorporated
-
1:
$0.99
-
291En existencias
-
2,500Se espera el 5/8/2026
|
N.º de artículo de Mouser
621-DMN4026SK3-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
|
|
291En existencias
2,500Se espera el 5/8/2026
|
|
|
$0.99
|
|
|
$0.616
|
|
|
$0.402
|
|
|
$0.31
|
|
|
$0.28
|
|
|
$0.24
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
28 A
|
20 mOhms
|
- 20 V, 20 V
|
1 V
|
9.6 nC
|
- 55 C
|
+ 150 C
|
3.4 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
- DMN53D0L-13
- Diodes Incorporated
-
1:
$0.35
-
161En existencias
-
10,000Se espera el 24/7/2026
|
N.º de artículo de Mouser
621-DMN53D0L-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
|
|
161En existencias
10,000Se espera el 24/7/2026
|
|
|
$0.35
|
|
|
$0.219
|
|
|
$0.136
|
|
|
$0.097
|
|
|
Ver
|
|
|
$0.047
|
|
|
$0.085
|
|
|
$0.075
|
|
|
$0.063
|
|
|
$0.047
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
500 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
1.5 V
|
1.2 nC
|
- 55 C
|
+ 150 C
|
420 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|