|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS260N10S5N019TATMA1
- Infineon Technologies
-
1:
$6.39
-
6,386En existencias
|
N.º de artículo de Mouser
726-US260N10S5N019T1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,386En existencias
|
|
|
$6.39
|
|
|
$4.06
|
|
|
$3.09
|
|
|
$2.85
|
|
|
$2.65
|
|
|
$2.65
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
100 V
|
250 A
|
1.9 mOhms
|
- 20 V, 20 V
|
3.8 V
|
128 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA180N10S5N029AUMA1
- Infineon Technologies
-
1:
$4.29
-
1,546En existencias
|
N.º de artículo de Mouser
726-IAUA180N10S5N029
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,546En existencias
|
|
|
$4.29
|
|
|
$2.79
|
|
|
$1.99
|
|
|
$1.67
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.9 mOhms
|
- 20 V, 20 V
|
3.8 V
|
81 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT150N10S5N035ATMA1
- Infineon Technologies
-
1:
$4.02
-
6,839En existencias
|
N.º de artículo de Mouser
726-IAUT150N10S5N035
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,839En existencias
|
|
|
$4.02
|
|
|
$2.46
|
|
|
$1.88
|
|
|
$1.57
|
|
|
$1.56
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
150 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
67 nC
|
- 55 C
|
+ 175 C
|
166 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT200N08S5N023ATMA1
- Infineon Technologies
-
1:
$4.21
-
6,045En existencias
|
N.º de artículo de Mouser
726-IAUT200N08S5N023
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,045En existencias
|
|
|
$4.21
|
|
|
$2.60
|
|
|
$1.99
|
|
|
$1.67
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
200 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.2 V
|
110 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100 V, N-Ch, 11.3 m max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS 5
- IAUCN10S5L110TATMA1
- Infineon Technologies
-
1:
$2.76
-
4,000En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUCN10S5L110TAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100 V, N-Ch, 11.3 m max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS 5
|
|
4,000En existencias
|
|
|
$2.76
|
|
|
$1.76
|
|
|
$1.22
|
|
|
$1.03
|
|
|
$0.917
|
|
|
$0.834
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
LHDSO-10
|
N-Channel
|
1 Channel
|
100 V
|
61 A
|
11.3 mOhms
|
20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA220N08S5N021AUMA1
- Infineon Technologies
-
1:
$4.19
-
2,368En existencias
|
N.º de artículo de Mouser
726-IAUA220N08S5N021
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,368En existencias
|
|
|
$4.19
|
|
|
$2.74
|
|
|
$2.09
|
|
|
$1.78
|
|
|
$1.67
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
80 V
|
220 A
|
2.1 mOhms
|
- 20 V, 20 V
|
3.8 V
|
81 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS240N08S5N019ATMA1
- Infineon Technologies
-
1:
$5.19
-
3,879En existencias
|
N.º de artículo de Mouser
726-IAUS240N08S5N019
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
3,879En existencias
|
|
|
$5.19
|
|
|
$3.45
|
|
|
$2.45
|
|
|
$2.16
|
|
|
$2.01
|
|
|
$2.01
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
240 A
|
3 mOhms
|
- 20 V, 20 V
|
2.2 V
|
130 nC
|
- 55 C
|
+ 175 C
|
230 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUMN08S5N012GAUMA1
- Infineon Technologies
-
1:
$6.40
-
2,840En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN08S5N012GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,840En existencias
|
|
|
$6.40
|
|
|
$4.20
|
|
|
$3.09
|
|
|
$2.75
|
|
|
$2.65
|
|
|
$2.43
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
PG-HSOG-4-1
|
N-Channel
|
1 Channel
|
80 V
|
370 A
|
1.2 mOhms
|
- 20 V, 20 V
|
3.8 V
|
149 nC
|
- 55 C
|
+ 175 C
|
325 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUMN08S5N013GAUMA1
- Infineon Technologies
-
1:
$5.71
-
3,445En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN08S5N013GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
3,445En existencias
|
|
|
$5.71
|
|
|
$3.81
|
|
|
$2.73
|
|
|
$2.45
|
|
|
$2.36
|
|
|
$2.29
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
PG-HSOG-4-1
|
N-Channel
|
1 Channel
|
80 V
|
350 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.8 V
|
138 nC
|
- 55 C
|
+ 175 C
|
307 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUMN10S5N016GAUMA1
- Infineon Technologies
-
1:
$6.26
-
98En existencias
-
4,000Se espera el 18/5/2026
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN10S5N016GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
98En existencias
4,000Se espera el 18/5/2026
|
|
|
$6.26
|
|
|
$4.13
|
|
|
$3.01
|
|
|
$2.70
|
|
|
$2.53
|
|
|
$2.45
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
PG-HSOG-4-1
|
N-Channel
|
1 Channel
|
100 V
|
310 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
142 nC
|
- 55 C
|
+ 175 C
|
325 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUCN10S5L094DATMA1
- Infineon Technologies
-
1:
$3.25
-
5,314En existencias
|
N.º de artículo de Mouser
726-IAUCN10S5L094DAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
5,314En existencias
|
|
|
$3.25
|
|
|
$2.11
|
|
|
$1.46
|
|
|
$1.16
|
|
|
$1.09
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUCN10S5L280DATMA1
- Infineon Technologies
-
1:
$2.29
-
4,075En existencias
|
N.º de artículo de Mouser
726-IAUCN10S5L280DAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,075En existencias
|
|
|
$2.29
|
|
|
$1.47
|
|
|
$0.991
|
|
|
$0.791
|
|
|
Ver
|
|
|
$0.677
|
|
|
$0.712
|
|
|
$0.705
|
|
|
$0.677
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUTN08S5N012LATMA1
- Infineon Technologies
-
1:
$6.35
-
2,353En existencias
|
N.º de artículo de Mouser
726-IAUTN08S5N012LAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,353En existencias
|
|
|
$6.35
|
|
|
$4.35
|
|
|
$3.14
|
|
|
$2.99
|
|
|
$2.90
|
|
|
$2.79
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
PG-HSOF-8-2
|
N-Channel
|
2 Channel
|
80 V
|
410 A
|
1.15 mOhms
|
- 20 V, 20 V
|
3.3 V
|
178 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS300N08S5N011TATMA1
- Infineon Technologies
-
1:
$7.68
-
7,150En existencias
|
N.º de artículo de Mouser
726-AUS300N08S5N011T
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
7,150En existencias
|
|
|
$7.68
|
|
|
$5.19
|
|
|
$3.78
|
|
|
$3.37
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
410 A
|
1.1 mOhms
|
- 20 V, 20 V
|
3.8 V
|
178 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N10S5L040ATMA1
- Infineon Technologies
-
1:
$3.42
-
21,655En existencias
|
N.º de artículo de Mouser
726-IAUC100N10S5L040
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
21,655En existencias
|
|
|
$3.42
|
|
|
$2.21
|
|
|
$1.55
|
|
|
$1.25
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.23
|
|
|
$1.18
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4 Ohms
|
- 20 V, 20 V
|
1.2 V
|
78 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT300N10S5N014ATMA1
- Infineon Technologies
-
1:
$6.53
-
16,758En existencias
-
20,000Se espera el 1/7/2026
|
N.º de artículo de Mouser
726-IAUT300N10S5N014
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
16,758En existencias
20,000Se espera el 1/7/2026
|
|
|
$6.53
|
|
|
$4.38
|
|
|
$3.16
|
|
|
$2.93
|
|
|
$2.82
|
|
|
$2.74
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS300N10S5N015TATMA1
- Infineon Technologies
-
1:
$7.41
-
7,233En existencias
|
N.º de artículo de Mouser
726-US300N10S5N015T1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
7,233En existencias
|
|
|
$7.41
|
|
|
$4.68
|
|
|
$3.45
|
|
|
$3.34
|
|
|
$3.28
|
|
|
$3.12
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
1.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
166 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA170N10S5N031AUMA1
- Infineon Technologies
-
1:
$3.88
-
3,875En existencias
|
N.º de artículo de Mouser
726-IAUA170N10S5N031
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
3,875En existencias
|
|
|
$3.88
|
|
|
$2.55
|
|
|
$1.97
|
|
|
$1.65
|
|
|
$1.53
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
170 A
|
3.1 mOhms
|
- 20 V, 20 V
|
3.8 V
|
67 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA180N08S5N026AUMA1
- Infineon Technologies
-
1:
$3.83
-
1,491En existencias
|
N.º de artículo de Mouser
726-IAUA180N08S5N026
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,491En existencias
|
|
|
$3.83
|
|
|
$2.51
|
|
|
$1.76
|
|
|
$1.49
|
|
|
$1.44
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
80 V
|
180 A
|
2.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
67 nC
|
- 55 C
|
+ 175 C
|
179 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA210N10S5N024AUMA1
- Infineon Technologies
-
1:
$5.00
-
1,430En existencias
-
2,000Se espera el 30/7/2026
|
N.º de artículo de Mouser
726-IAUA210N10S5N024
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,430En existencias
2,000Se espera el 30/7/2026
|
|
|
$5.00
|
|
|
$3.31
|
|
|
$2.35
|
|
|
$2.05
|
|
|
$1.91
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
210 A
|
2.4 mOhms
|
- 20 V, 20 V
|
3.8 V
|
91 nC
|
- 55 C
|
+ 175 C
|
238 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUA250N08S5N018AUMA1
- Infineon Technologies
-
1:
$4.77
-
1,023En existencias
|
N.º de artículo de Mouser
726-IAUA250N08S5N018
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,023En existencias
|
|
|
$4.77
|
|
|
$3.16
|
|
|
$2.23
|
|
|
$1.93
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
80 V
|
250 A
|
1.8 mOhms
|
- 20 V, 20 V
|
3.8 V
|
96 nC
|
- 55 C
|
+ 175 C
|
238 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N08S5N031ATMA1
- Infineon Technologies
-
1:
$2.98
-
9,190En existencias
|
N.º de artículo de Mouser
726-IAUC100N08S5N031
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
9,190En existencias
|
|
|
$2.98
|
|
|
$1.91
|
|
|
$1.30
|
|
|
$1.09
|
|
|
$1.03
|
|
|
$0.937
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
76 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N08S5N043ATMA1
- Infineon Technologies
-
1:
$2.53
-
11,605En existencias
|
N.º de artículo de Mouser
726-IAUC100N08S5N043
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
11,605En existencias
|
|
|
$2.53
|
|
|
$1.63
|
|
|
$1.11
|
|
|
$0.886
|
|
|
Ver
|
|
|
$0.756
|
|
|
$0.809
|
|
|
$0.797
|
|
|
$0.756
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
56 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N10S5L054ATMA1
- Infineon Technologies
-
1:
$2.60
-
2,092En existencias
|
N.º de artículo de Mouser
726-IAUC100N10S5L054
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,092En existencias
|
|
|
$2.60
|
|
|
$1.68
|
|
|
$1.15
|
|
|
$0.917
|
|
|
Ver
|
|
|
$0.787
|
|
|
$0.843
|
|
|
$0.787
|
|
|
$0.787
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC60N10S5L110ATMA1
- Infineon Technologies
-
1:
$1.85
-
4,480En existencias
|
N.º de artículo de Mouser
726-IAUC60N10S5L110A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,480En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.791
|
|
|
$0.625
|
|
|
Ver
|
|
|
$0.509
|
|
|
$0.545
|
|
|
$0.541
|
|
|
$0.509
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|