|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
- STD11N60DM2
- STMicroelectronics
-
1:
$2.45
-
4,358En existencias
|
N.º de artículo de Mouser
511-STD11N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
4,358En existencias
|
|
|
$2.45
|
|
|
$1.57
|
|
|
$1.06
|
|
|
$0.852
|
|
|
$0.774
|
|
|
$0.686
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
370 mOhms
|
- 25 V, 25 V
|
3 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
- STD12N50DM2
- STMicroelectronics
-
1:
$2.50
-
2,206En existencias
|
N.º de artículo de Mouser
511-STD12N50DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,206En existencias
|
|
|
$2.50
|
|
|
$1.60
|
|
|
$1.10
|
|
|
$0.876
|
|
|
$0.805
|
|
|
$0.745
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
11 A
|
350 mOhms
|
- 25 V, 25 V
|
4 V
|
120 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
- STD13N60DM2
- STMicroelectronics
-
1:
$2.31
-
3,149En existencias
|
N.º de artículo de Mouser
511-STD13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
3,149En existencias
|
|
|
$2.31
|
|
|
$1.49
|
|
|
$1.01
|
|
|
$0.808
|
|
|
$0.671
|
|
|
Ver
|
|
|
$0.758
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
310 mOhms
|
- 25 V, 25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
- STL13N60DM2
- STMicroelectronics
-
1:
$2.78
-
3,195En existencias
|
N.º de artículo de Mouser
511-STL13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
|
|
3,195En existencias
|
|
|
$2.78
|
|
|
$1.80
|
|
|
$1.24
|
|
|
$1.02
|
|
|
Ver
|
|
|
$0.826
|
|
|
$0.999
|
|
|
$0.826
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
350 mOhms
|
- 25 V, 25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
- STB33N60DM2
- STMicroelectronics
-
1:
$5.63
-
857En existencias
|
N.º de artículo de Mouser
511-STB33N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
|
|
857En existencias
|
|
|
$5.63
|
|
|
$3.75
|
|
|
$2.68
|
|
|
$2.40
|
|
|
$2.07
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
- STB35N60DM2
- STMicroelectronics
-
1:
$6.77
-
578En existencias
|
N.º de artículo de Mouser
511-STB35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
|
|
578En existencias
|
|
|
$6.77
|
|
|
$4.49
|
|
|
$3.27
|
|
|
$2.96
|
|
|
$2.43
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
- STP33N60DM2
- STMicroelectronics
-
1:
$5.21
-
1,406En existencias
|
N.º de artículo de Mouser
511-STP33N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
1,406En existencias
|
|
|
$5.21
|
|
|
$2.63
|
|
|
$2.45
|
|
|
$2.04
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
- STL24N60DM2
- STMicroelectronics
-
1:
$4.10
-
7,582En existencias
|
N.º de artículo de Mouser
511-STL24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
|
|
7,582En existencias
|
|
|
$4.10
|
|
|
$2.70
|
|
|
$1.92
|
|
|
$1.57
|
|
|
$1.46
|
|
|
Ver
|
|
|
$1.47
|
|
|
$1.42
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
15 A
|
195 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.57
-
1,156En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,156En existencias
|
|
|
$3.57
|
|
|
$1.98
|
|
|
$1.67
|
|
|
$1.37
|
|
|
Ver
|
|
|
$1.25
|
|
|
$1.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD8N60DM2
- STMicroelectronics
-
1:
$1.83
-
1,750En existencias
|
N.º de artículo de Mouser
511-STD8N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
1,750En existencias
|
|
|
$1.83
|
|
|
$1.17
|
|
|
$0.775
|
|
|
$0.619
|
|
|
$0.488
|
|
|
Ver
|
|
|
$0.557
|
|
|
$0.441
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
570 mOhms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$4.26
-
848En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
848En existencias
|
|
|
$4.26
|
|
|
$2.17
|
|
|
$1.97
|
|
|
$1.62
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP packa
- STF35N60DM2
- STMicroelectronics
-
1:
$6.20
-
538En existencias
|
N.º de artículo de Mouser
511-STF35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP packa
|
|
538En existencias
|
|
|
$6.20
|
|
|
$3.27
|
|
|
$2.98
|
|
|
$2.49
|
|
|
Ver
|
|
|
$2.32
|
|
|
$2.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD10N60DM2
- STMicroelectronics
-
1:
$2.12
-
2,116En existencias
|
N.º de artículo de Mouser
511-STD10N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,116En existencias
|
|
|
$2.12
|
|
|
$1.35
|
|
|
$0.908
|
|
|
$0.727
|
|
|
$0.592
|
|
|
Ver
|
|
|
$0.66
|
|
|
$0.585
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
440 mOhms
|
- 25 V, 25 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
109 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.49
-
382En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
382En existencias
|
|
|
$5.49
|
|
|
$3.10
|
|
|
$2.22
|
|
|
$2.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
- STB24N60DM2
- STMicroelectronics
-
1:
$3.74
-
1,175En existencias
|
N.º de artículo de Mouser
511-STB24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
|
|
1,175En existencias
|
|
|
$3.74
|
|
|
$2.45
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.44
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
FDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF43N60DM2
- STMicroelectronics
-
1:
$5.52
-
578En existencias
-
1,000Se espera el 22/6/2026
|
N.º de artículo de Mouser
511-STF43N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
578En existencias
1,000Se espera el 22/6/2026
|
|
|
$5.52
|
|
|
$3.03
|
|
|
$2.77
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
93 mOhms
|
- 25 V, 25 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
- STL33N60DM2
- STMicroelectronics
-
1:
$5.90
-
1,380En existencias
|
N.º de artículo de Mouser
511-STL33N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
|
|
1,380En existencias
|
|
|
$5.90
|
|
|
$3.94
|
|
|
$2.83
|
|
|
$2.56
|
|
|
$2.47
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
115 mOhms
|
- 25 V, 25 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package
- STP28N60DM2
- STMicroelectronics
-
1:
$4.48
-
2,961En existencias
|
N.º de artículo de Mouser
511-STP28N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
2,961En existencias
|
|
|
$4.48
|
|
|
$2.31
|
|
|
$2.10
|
|
|
$1.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
39 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
- STP43N60DM2
- STMicroelectronics
-
1:
$5.95
-
3,000En existencias
|
N.º de artículo de Mouser
511-STP43N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
3,000En existencias
|
|
|
$5.95
|
|
|
$3.16
|
|
|
$2.89
|
|
|
$2.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
93 mOhms
|
- 25 V, 25 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
- STW28N60DM2
- STMicroelectronics
-
1:
$5.09
-
1,094En existencias
|
N.º de artículo de Mouser
511-STW28N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
|
|
1,094En existencias
|
|
|
$5.09
|
|
|
$2.84
|
|
|
$2.34
|
|
|
$1.98
|
|
|
Ver
|
|
|
$1.97
|
|
|
$1.73
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
39 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
- STW43N60DM2
- STMicroelectronics
-
1:
$7.44
-
2,384En existencias
|
N.º de artículo de Mouser
511-STW43N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
|
|
2,384En existencias
|
|
|
$7.44
|
|
|
$4.32
|
|
|
$3.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
93 mOhms
|
- 25 V, 25 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 packag
- STW48N60DM2
- STMicroelectronics
-
1:
$5.56
-
1,836En existencias
|
N.º de artículo de Mouser
511-STW48N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 packag
|
|
1,836En existencias
|
|
|
$5.56
|
|
|
$3.28
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
40 A
|
65 mOhms
|
- 25 V, 25 V
|
3 V
|
70 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag
- STW56N65DM2
- STMicroelectronics
-
1:
$11.21
-
598En existencias
|
N.º de artículo de Mouser
511-STW56N65DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag
|
|
598En existencias
|
|
|
$11.21
|
|
|
$7.46
|
|
|
$6.38
|
|
|
$6.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
48 A
|
58 mOhms
|
- 25 V, 25 V
|
3 V
|
88 nC
|
- 55 C
|
+ 150 C
|
360 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
- STW70N60DM2
- STMicroelectronics
-
1:
$11.43
-
1,338En existencias
|
N.º de artículo de Mouser
511-STW70N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
|
|
1,338En existencias
|
|
|
$11.43
|
|
|
$6.97
|
|
|
$5.93
|
|
|
$5.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
66 A
|
42 mOhms
|
- 25 V, 25 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
- STB28N60DM2
- STMicroelectronics
-
1:
$4.26
-
63En existencias
|
N.º de artículo de Mouser
511-STB28N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
|
|
63En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.81
|
|
|
$1.66
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
39 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|