|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm
- TK4A53D(STA4,Q,M)
- Toshiba
-
1:
$1.88
-
300En existencias
|
N.º de artículo de Mouser
757-TK4A53DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm
|
|
300En existencias
|
|
|
$1.88
|
|
|
$1.20
|
|
|
$0.794
|
|
|
$0.65
|
|
|
Ver
|
|
|
$0.569
|
|
|
$0.523
|
|
|
$0.518
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
525 V
|
4 A
|
1.7 Ohms
|
|
|
|
|
|
35 W
|
|
MOSVII
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 2.5A 650V 35W 490pF 2.51
- TK3A65DA(STA4,QM)
- Toshiba
-
1:
$2.11
-
240En existencias
|
N.º de artículo de Mouser
757-TK3A65DASTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 2.5A 650V 35W 490pF 2.51
|
|
240En existencias
|
|
|
$2.11
|
|
|
$1.17
|
|
|
$0.933
|
|
|
$0.689
|
|
|
$0.629
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
2.5 A
|
2.51 Ohms
|
|
|
|
|
|
35 W
|
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 70A 410W MOSVII 160nC .0029
- TK70J20D,S1Q
- Toshiba
-
1:
$8.50
-
75En existencias
|
N.º de artículo de Mouser
757-TK70J20DS1Q
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 70A 410W MOSVII 160nC .0029
|
|
75En existencias
|
|
|
$8.50
|
|
|
$6.19
|
|
|
$5.15
|
|
|
$4.58
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PN-3
|
N-Channel
|
1 Channel
|
200 V
|
70 A
|
27 mOhms
|
- 20 V, 20 V
|
3.5 V
|
160 nC
|
- 55 C
|
+ 150 C
|
410 W
|
Enhancement
|
MOSVII
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 10A 500V 45W 1050pF 0.72
- TK10A50D(STA4,Q,M)
- Toshiba
-
1:
$2.81
-
253En existencias
|
N.º de artículo de Mouser
757-TK10A50DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 10A 500V 45W 1050pF 0.72
|
|
253En existencias
|
|
|
$2.81
|
|
|
$1.39
|
|
|
$1.24
|
|
|
$0.963
|
|
|
$0.875
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
10 A
|
620 mOhms
|
- 30 V, 30 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 12A 600V 45W 1800pF 0.55
- TK12A60D(STA4,Q,M)
- Toshiba
-
1:
$3.96
-
49En existencias
-
150Se espera el 25/5/2026
|
N.º de artículo de Mouser
757-TK12A60DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 12A 600V 45W 1800pF 0.55
|
|
49En existencias
150Se espera el 25/5/2026
|
|
|
$3.96
|
|
|
$2.01
|
|
|
$1.73
|
|
|
$1.48
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
550 mOhms
|
- 30 V, 30 V
|
2 V
|
38 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 18A 500V 50W 2600pF 0.27
- TK18A50D(STA4,Q,M)
- Toshiba
-
1:
$4.35
-
94En existencias
|
N.º de artículo de Mouser
757-TK18A50DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 18A 500V 50W 2600pF 0.27
|
|
94En existencias
|
|
|
$4.35
|
|
|
$2.24
|
|
|
$1.97
|
|
|
$1.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
18 A
|
270 mOhms
|
- 30 V, 30 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
- TK5A90E,S4X
- Toshiba
-
1:
$2.27
-
146En existencias
|
N.º de artículo de Mouser
757-TK5A90ES4X
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
|
|
146En existencias
|
|
|
$2.27
|
|
|
$1.11
|
|
|
$1.03
|
|
|
$0.794
|
|
|
$0.746
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
4.5 A
|
3.1 Ohms
|
- 30 V, 30 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm
- TK5P50D(T6RSS-Q)
- Toshiba
-
1:
$2.30
-
749En existencias
-
2,000Se espera el 25/5/2026
|
N.º de artículo de Mouser
757-TK5P50DT6RSS-Q
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm
|
|
749En existencias
2,000Se espera el 25/5/2026
|
|
|
$2.30
|
|
|
$1.48
|
|
|
$0.998
|
|
|
$0.796
|
|
|
$0.675
|
|
|
Ver
|
|
|
$0.73
|
|
|
$0.663
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
5 A
|
1.3 Ohms
|
- 30 V, 30 V
|
4.4 V
|
11 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
- TK6A65D(STA4,Q,M)
- Toshiba
-
1:
$2.60
-
346En existencias
|
N.º de artículo de Mouser
757-TK6A65DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
|
|
346En existencias
|
|
|
$2.60
|
|
|
$1.28
|
|
|
$1.23
|
|
|
$0.925
|
|
|
$0.896
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
1.11 Ohms
|
- 30 V, 30 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 10A 40V 25W 410pF 0.029
- TK11A45D(STA4,Q,M)
- Toshiba
-
1:
$2.51
-
103En existencias
|
N.º de artículo de Mouser
757-TK11A45DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 10A 40V 25W 410pF 0.029
|
|
103En existencias
|
|
|
$2.51
|
|
|
$1.24
|
|
|
$1.18
|
|
|
$0.891
|
|
|
$0.856
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
450 V
|
11 A
|
500 mOhms
|
- 30 V, 30 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 13A 500V 45W 1550pF 0.47
- TK13A50DA(STA4,Q,M
- Toshiba
-
1:
$3.31
-
134En existencias
|
N.º de artículo de Mouser
757-TK13A50DASTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 13A 500V 45W 1550pF 0.47
|
|
134En existencias
|
|
|
$3.31
|
|
|
$2.00
|
|
|
$1.72
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
12.5 A
|
390 mOhms
|
- 30 V, 30 V
|
4 V
|
28 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ
- TK13P25D,RQ
- Toshiba
-
1:
$1.66
-
1,516En existencias
-
2,000Se espera el 17/9/2026
|
N.º de artículo de Mouser
757-TK13P25DRQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ
|
|
1,516En existencias
2,000Se espera el 17/9/2026
|
|
|
$1.66
|
|
|
$1.06
|
|
|
$0.703
|
|
|
$0.554
|
|
|
$0.506
|
|
|
$0.463
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
250 V
|
13 A
|
250 mOhms
|
- 20 V, 20 V
|
1.5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ
- TK18A30D,S5X
- Toshiba
-
1:
$2.70
-
103En existencias
|
N.º de artículo de Mouser
757-TK18A30DS5X
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ
|
|
103En existencias
|
|
|
$2.70
|
|
|
$1.33
|
|
|
$1.22
|
|
|
$0.955
|
|
|
$0.828
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
300 V
|
18 A
|
139 mOhms
|
- 20 V, 20 V
|
1.5 V
|
60 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 19A 450V 50W 2600pF 0.25
- TK19A45D(STA4,Q,M)
- Toshiba
-
1:
$4.95
-
53En existencias
|
N.º de artículo de Mouser
757-TK19A45DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 19A 450V 50W 2600pF 0.25
|
|
53En existencias
|
|
|
$4.95
|
|
|
$2.56
|
|
|
$2.31
|
|
|
$1.91
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
450 V
|
19 A
|
250 mOhms
|
|
|
|
|
|
50 W
|
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 2A 650V 30W 380pF 3.26
- TK2A65D(STA4,Q,M)
- Toshiba
-
1:
$1.93
-
194En existencias
|
N.º de artículo de Mouser
757-TK2A65DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 2A 650V 30W 380pF 3.26
|
|
194En existencias
|
|
|
$1.93
|
|
|
$0.928
|
|
|
$0.882
|
|
|
$0.658
|
|
|
$0.595
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
2 A
|
3.26 Ohms
|
- 30 V, 30 V
|
2.4 V
|
9 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-ch 600V 2.5A 30w 2.8 Ohm
- TK3A60DA(STA4,Q,M)
- Toshiba
-
1:
$1.87
-
41En existencias
|
N.º de artículo de Mouser
757-TK3A60DASTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-ch 600V 2.5A 30w 2.8 Ohm
|
|
41En existencias
|
|
|
$1.87
|
|
|
$0.893
|
|
|
$0.772
|
|
|
$0.62
|
|
|
Ver
|
|
|
$0.529
|
|
|
$0.521
|
|
|
$0.499
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
2.5 A
|
2.8 Ohms
|
- 30 V, 30 V
|
2.4 V
|
9 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
- TK3A65D(STA4,Q,M)
- Toshiba
-
1:
$2.09
-
134En existencias
|
N.º de artículo de Mouser
757-TK3A65DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
|
|
134En existencias
|
|
|
$2.09
|
|
|
$1.02
|
|
|
$0.986
|
|
|
$0.722
|
|
|
$0.665
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
3 A
|
2.25 Ohms
|
- 30 V, 30 V
|
2.4 V
|
11 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm
- TK4A50D(STA4,Q,M)
- Toshiba
-
1:
$1.41
-
295En existencias
|
N.º de artículo de Mouser
757-TK4A50DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm
|
|
295En existencias
|
|
|
$1.41
|
|
|
$0.661
|
|
|
$0.66
|
|
|
$0.455
|
|
|
Ver
|
|
|
$0.381
|
|
|
$0.379
|
|
|
$0.343
|
|
|
$0.338
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
500 V
|
4 A
|
2 Ohms
|
|
|
|
|
|
30 W
|
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
- TK4P60DB(T6RSS-Q)
- Toshiba
-
1:
$1.52
-
55En existencias
|
N.º de artículo de Mouser
757-TK4P60DBT6RSS-Q
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
|
|
55En existencias
|
|
|
$1.52
|
|
|
$0.955
|
|
|
$0.633
|
|
|
$0.50
|
|
|
$0.464
|
|
|
$0.398
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.7 A
|
2 Ohms
|
- 30 V, 30 V
|
4.4 V
|
11 nC
|
|
+ 150 C
|
80 W
|
Enhancement
|
MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ
- TK4P60D,RQ
- Toshiba
-
1:
$1.63
-
1,354En existencias
|
N.º de artículo de Mouser
757-TK4P60DRQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ
|
|
1,354En existencias
|
|
|
$1.63
|
|
|
$1.03
|
|
|
$0.686
|
|
|
$0.538
|
|
|
$0.45
|
|
|
Ver
|
|
|
$0.491
|
|
|
$0.412
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4 A
|
1.7 Ohms
|
- 30 V, 30 V
|
2.4 V
|
12 nC
|
- 55 C
|
+ 150 C
|
100 W
|
Enhancement
|
MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm
- TK5A55D(STA4,Q,M)
- Toshiba
-
1:
$2.07
-
250En existencias
|
N.º de artículo de Mouser
757-TK5A55DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm
|
|
250En existencias
|
|
|
$2.07
|
|
|
$1.20
|
|
|
$0.906
|
|
|
$0.703
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.572
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
550 V
|
5 A
|
1.7 Ohms
|
|
|
|
|
|
35 W
|
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
- TK5A65D(STA4,Q,M)
- Toshiba
-
1:
$2.51
-
164En existencias
|
N.º de artículo de Mouser
757-TK5A65DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
|
|
164En existencias
|
|
|
$2.51
|
|
|
$1.47
|
|
|
$1.12
|
|
|
$0.876
|
|
|
$0.746
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
5 A
|
1.43 Ohms
|
- 30 V, 30 V
|
2 V
|
16 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 800V 5A N-CH MOSFET
- TK5A80E,S4X
- Toshiba
-
1:
$2.25
-
147En existencias
|
N.º de artículo de Mouser
757-TK5A80ES4X
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 800V 5A N-CH MOSFET
|
|
147En existencias
|
|
|
$2.25
|
|
|
$1.10
|
|
|
$1.01
|
|
|
$0.784
|
|
|
$0.736
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220SIS-3
|
N-Channel
|
1 Channel
|
800 V
|
5 A
|
2.4 Ohms
|
- 30 V, 30 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 7A 500V 35W 600pF 1.22
- TK7A50D(STA4,Q,M)
- Toshiba
-
1:
$1.98
-
5En existencias
|
N.º de artículo de Mouser
757-TK7A50DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 7A 500V 35W 600pF 1.22
|
|
5En existencias
|
|
|
$1.98
|
|
|
$0.955
|
|
|
$0.854
|
|
|
$0.679
|
|
|
$0.618
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7 A
|
1 Ohms
|
- 30 V, 30 V
|
4.4 V
|
12 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
MOSVII
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm
- TK8A45D(STA4,Q,M)
- Toshiba
-
1:
$2.08
-
206En existencias
|
N.º de artículo de Mouser
757-TK8A45DSTA4QM
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm
|
|
206En existencias
|
|
|
$2.08
|
|
|
$1.01
|
|
|
$0.979
|
|
|
$0.718
|
|
|
$0.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
450 V
|
8 A
|
900 mOhms
|
- 30 V, 30 V
|
4.4 V
|
16 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
MOSVII
|
Tube
|
|
