ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET
ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET offers an 80V drain-source voltage with low on-resistance. The device features a ±100A continuous drain current and 89W power dissipation. The RJ1N04BBH is suitable for many applications, including switching, motor drives, and DC/DC converters. The ROHM RJ1N04BBH MOSFET is available in a high-power TO263AB package.
Features
- Low on-resistance
- High power package (TO263AB)
- Pb-free plating and RoHS-compliant
- Halogen-free
- 100% Rg and UIS tested
Applications
- Switching
- Motor drives
- DC/DC converter
Specifications
- 80V drain-source voltage
- 5.3mΩ static drain-source on-state resistance
- ±100A continuous drain current
- 89W power dissipation
Typical Application
Measurement circuits
Publicado: 2025-03-04
| Actualizado: 2025-03-12