onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET
onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET is a 1200V, M3S, planar device optimized for fast switching applications. Planar technology reliably works with a negative gate voltage drive and turn off spikes on the gate. NTHL022N120M3S offers optimum performance when driven with an 18V gate drive (also works with a 15V gate drive). Available in a TO-247-3L package, the NTHL022N120M3S is ideal for industrial, UPS/ESS, solar, and EV charger applications.
Features
- Excellent FOM
- Ultra-low ate charge
- High-speed switching with low capacitance
- 15V to 18V gate drive
- N-channel
- Enhancement mode
- M3S technology
- Through-hole mount, TO-247-3L package style
- 100% avalanche tested
- Halogen-free and RoHS compliant
Applications
- Industrial
- UPS/ESS
- Solar
- EV chargers
Specifications
- 12kV drain-source breakdown voltage
- 68A continuous drain current
- 30mΩ on-drain-source resistance
- -10V or +22V gate-source voltage
- 4.4V gate-source threshold voltage
- 139nC gate charge
- -55°C to +175°C operating temperature range
- 352W power dissipation
- 14ns fall time
- 50ns rise time
- 34S forward transconductance
- Typical delay time
- 44ns turn-off
- 19ns turn-on
Additional Resources
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Publicado: 2023-05-01
| Actualizado: 2024-06-19