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Vishay / Siliconix SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET

Vishay / Siliconix SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET is designed for high-efficiency power switching applications. Housed in a compact PowerPAK® 8mm x 8mm bond wireless (BWL) package, the SiEH4800EW delivers an exceptionally low on-resistance of 0.00115Ω at a VGS of 10V, minimizing conduction losses and improving thermal performance. With a maximum continuous drain current of 260A and a low gate charge of 117nC, the Vishay / Siliconix MOSFET is optimized for fast switching and high-current handling, making it ideal for use in synchronous rectification, motor drives, and high-performance DC-DC converters. A rugged design and advanced trench technology ensure reliable operation in demanding environments.

Features

  • TrenchFET Gen IV power MOSFET
  • Offered in the space-saving PowerPAK 8mm x 8mm BWL package with an ultra-low 1mm profile, minimizes parasitic inductance while maximizing current capability
  • Wettable flank package enhances solderability, while making it easier to visually inspect solder joint reliability
  • Implements fused lead to increase the source PAD solderable area and enable a more robust design
  • Low maximum RthJC of 0.36°C/W improves thermal performance
  • Low on-resistance down to 0.88mΩ typical at 10V minimizes power losses from conduction to increase efficiency
  • Very low RDS x Qg figure of merit (FOM)
  • High temperature operation up to +175°C
  • 50% smaller footprint than D2PAK (TO-263)
  • 100% Rg and UIS tested
  • Fully lead-free, Halogen-free, and RoHS compliant

Applications

  • Synchronous rectification
  • OR-ing
  • Motor drive control
  • Battery management

Specifications

  • Static
    • 80V maximum drain-source breakdown voltage
    • 2V to 4V gate-source threshold voltage
    • ±100nA maximum gate-source leakage
    • 150S typical forward transconductance
  • Dynamic
    • 29nF typical input capacitance
    • 1650pF typical output capacitance
    • 42pF typical reverse transfer capacitance
    • 0.24Ω to 2.4Ω gate resistance range
    • 45ns to 60ns maximum turn-on delay time range
    • 30ns to 50ns maximum rise time range
    • 130ns to 140ns maximum turn-off delay time range
    • 40ns fall time
  • Drain-source body diode
    • 379A maximum continuous source-drain diode current (TC = +25°C)
    • 700A maximum pulse diode forward current
    • 1.1V maximum body diode voltage
    • 165ns maximum body diode reverse recovery time
    • 500nC maximum body diode reverse recovery charge
    • 60ns typical reverse recovery fall time
    • 23ns typical reverse recovery rise time
  • ±20V maximum gate-source voltage
  • Maximum continuous drain current (TJ = +175°C)
    • 29A (TA = +70°C) to 34A (TA = +25°C)
    • 319A (TC = +70°C) to 381A (TC = +25°C)
  • Single-pulse avalanche
    • 87A maximum current
    • 380mJ maximum energy
  • Maximum power dissipation
    • 2.4W (TA = +70°C) to 3.4W (TA = +25°C)
    • 292W (TC = +70°C) to 417W (TC = +25°C)
  • -55°C to +175°C operating junction temperature range
  • +260°C maximum peak soldering temperature
  • Maximum thermal resistance
    • 44°C/W junction-to-ambient, steady state
    • 0.36°/W m junction-to-case (drain), steady state

Resources

Publicado: 2025-06-11 | Actualizado: 2025-06-16