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Toshiba DF2BxM4ASL ESD Protection Diodes

Toshiba DF2BxM4ASL ESD Protection Diodes protect semiconductor devices like mobile device interfaces and other applications against static electricity and noise. These ESD protection diodes utilize snapback characteristics, providing low dynamic resistance and superior protective performance. The DF2BxM4ASL diodes optimum the high-speed signal application for low capacitance performance. These ESD protection diodes are stored at -55°C to 150°C. The Toshiba DF2BxM4ASL diodes function at 150°C junction temperature, 30W peak pulse power,  and 2A peak pulse current. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.

Features

  • The compact package suits the use in high-density board layouts such as in mobile devices
  • Low dynamic resistance protects semiconductor devices from static electricity and noise
  • Snapback characteristics realizing low clamping voltage protect semiconductor devices
  • Protects devices with its high ESD performance

Specifications

  • DF2B5M4ASL:
    • 3.6V working peak reverse voltage
    • 4V to 6V holding voltage range
  • DF2B6M4ASL:
    • 5.5V working peak reverse voltage
    • 5.6V to 8V holding voltage range
  • -55°C to 150°C storage temperature range
  • 150°C junction temperature
  • 30W peak pulse power
  • 2A peak pulse current

Applications

  • Mobile equipment
    • Smartphones
    • Tablets
    • Notebook PCs
  • Desktop PCs

Circuit Diagram

Location Circuit - Toshiba DF2BxM4ASL ESD Protection Diodes

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N.º de artículo Hoja de datos Descripción Voltaje en funcionamiento Tensión de disparo Vesd - Contacto de voltaje ESD Vesd - Espacio de aire de voltaje ESD
DF2B5M4ASL,L3F DF2B5M4ASL,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Bi-Dir ESD 2A; 3.6V SOD-962 (SL2) 3.6 V 5 V 16 kV 16 kV
DF2B6M4ASL,L3F DF2B6M4ASL,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Bi-Dir ESD 2A; 5.5V SOD-962 (SL2) 5.5 V 6.2 V 15 kV 15 kV
Publicado: 2020-04-14 | Actualizado: 2024-11-11