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Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS) is a 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package. This BDS conducts current and blocks voltage in both directions, combining a high-voltage depletion-mode GaN with low-voltage normally-off silicon MOSFETs. The TP65B110HRU BDS is based on the SuperGaN® Gen 1 bidirectional platform.  This BDS delivers superior performance, standard gate‑drive compatibility, easy integration, and robust reliability. The TP65B110HRU BDS offers breakthrough integration, resulting in reduced component count, lower cost, and a smaller footprint. This BDS enables ultra-fast switching, high efficiency, and higher power density, and is ideal for MHz-class operation and compact magnetics. Typical applications include PV inverters, battery chargers, AI datacenter and telecom power supplies, motor drives, and UPS.

Features

  • Ultra-fast switching for high efficiency and high power-density converters
  • Smaller footprint and lower cost versus back-to-back unidirectional switches
  • Reliable under the widest range of operating conditions, including AC and DC
  • Insulated gate with high threshold
  • Built-in freewheeling diode with low voltage drop
  • Negligible reverse recovery charge
  • Low gate charge (Qg) and low output charge (Qoss)
  • High dv/dt immunity
  • Soft and hard-switching capability
  • Transient over-voltage capability
  • DC bias withstand capability
  • 2kV ESD capability (HBM and CDM)
  • JEDEC qualified
  • RoHS-compliant and halogen-free packaging

Applications

  • PV inverters
  • Battery chargers
  • Motor drives
  • AI datacenter and telecom power supplies
  • UPS

Specifications

  • 650Vpk VSS(AC) off-state continuous AC voltage between S1 and S2 (TJ = -55°C to 150°C)
  • ±650V VSS(DC) off-state continuous DC voltage between S1 and S2 (TJ = -55°C to 150°C)
  • ±800V VSS(TR) off-state transient voltage between S1 and S2 (<10µs events, 60s cumulative)
  • ±12V VGS,max continuous gate to source voltage
  • ±20V VGS,max (TR) transient gate to source voltage
  • 156W PD maximum power dissipation at TC = 25°C
  • -55°C to 150°C storage temperature
  • 3V typical VGS(th) gate threshold voltage

Typical Output Characteristics

Performance Graph - Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

Example Application (Solar-Micro Inverter)

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

Additional Resources

Related Kit

Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit

Supports flexible experimentation with GaN BDS modulation and operation.

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Publicado: 2026-03-16 | Actualizado: 2026-03-27