Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET
Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET uses advanced Trench technology and design to provide excellent RDS(ON) and a low gate charge. This device features good stability and uniformity with high single pulse avalanche energy. The RM150N60HD is ideal for hard-switched and high-frequency circuits, power switching, and uninterruptible power supplies.
The Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET is available in a compact TO-263-2L package, ideal for space-constrained applications.
Features
- 60V drain-source voltage (VDS)
- 150A continuous drain current (ID)
- 600A pulsed drain current (IDM)
- 3.6mΩ typical RDS(ON)
- 163nC total gate charge (Qg)
- Excellent Qg x RDS(on)
- 220W maximum power dissipation (PD)
- 6500pF input capacitance (CISS)
- 650pF output capacitance (COSS)
- -55°C To 175°C operating junction and storage temperature range (TJ, TSTG)
- TO-263-2L package
- Pb-free lead plating
- 100% UIS tested
Applications
- Power switching applications
- Hard-switched and high-frequency circuits
- Uninterruptible power supplies
Related Products
Rectron RM135N100HD N-Channel Super Trench Power MOSFET
Features Super Trench technology optimized for efficient high-frequency switching performance.
Test Circuits
Package Outline
Publicado: 2022-09-19
| Actualizado: 2022-09-22