Qorvo QPA2935 2W S-Band GaN Driver Amplifier
Qorvo QPA2935 2W S-Band GaN Driver Amplifier operates from 2.7GHz to 3.5GHz and delivers 33dBm of saturated output power and 18dB of large-signal gain while achieving greater than 52% power-added efficiency. The QPA2935 is fabricated on the QGaN25 0.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is matched to 50Ω with integrated DC blocking caps on both I/O ports.
The Qorvo QPA2935 S-Band GaN Driver Amplifier is housed in a compact 4mm x 4mm plastic overmolded package. This device is 100% DC and RF tested to ensure compliance with electrical specifications.
Features
- 2.7GHz to 3.5GHz frequency range
- 33dBm saturated output power (PSAT)
- 52% power-added efficiency (PAE)
- 18dB large-signal gain
- 28.4dB small signal gain
- 15dB input return loss
- Bias: VD = 25V, IDQ = 29mA
- -40°C to +85°C operating temperature range
- 4mm x 4mm x 0.85 plastic overmolded package
- Lead-free, halogen-free, and RoHS compliant
Applications
- Electronic warfare
- Civilian and military radar
Development Tools
Qorvo QPA2935EVB Evaluation Board
Demonstration and development platform for the QPA2935 2W S-Band GaN Driver Amplifier.
Block Diagram
Package Outline
Publicado: 2022-04-28
| Actualizado: 2022-05-02