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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET is designed with demanding power and automotive applications in mind. Built on onsemi’s advanced MOSFET technology, the NVBYST0D8N08X balances low conduction losses with rugged switching performance, making the device a solid choice for designs that need both efficiency and durability. The MOSFET is optimized for high‑voltage operation and withstands the fast switching and high-current stresses commonly encountered in power conversion, motor control, and load-switching circuits.

One of the key features of the onsemi NVBYST0D8N08X MOSFET is the low on‑resistance, which helps reduce heat generation and improve overall system efficiency, especially under heavy load conditions. The device also offers strong avalanche capability and a robust gate structure, contributing to reliable operation in electrically noisy environments. Packaged for surface‑mount power applications, the NVBYST0D8N08X supports efficient thermal management and straightforward PCB integration, well-suited for compact, high‑power designs where space and reliability are equally important.

Features

  • Low QRR, soft recovery body diode
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • TCPAK1012 (DFLPAK16 [TopCool] Case 762AA) package
  • AEC-Q101 qualified and PPAP capable
  • Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Synchronous rectification (SR) in DC-DC and AC-DC
  • Primary switches in isolated DC-DC converters
  • Motor drives
  • Automotive 48V systems

Specifications

  • 80V maximum drain-to-source voltage
  • ±20V maximum gate-to-source voltage
  • 455A to 643A maximum continuous drain current
  • 0.79mΩ maximum drain-to-source on resistance
  • 100nA maximum gate-to-source leakage current
  • 652W maximum power dissipation at +25°C
  • 1976A maximum pulsed drain current
  • 1097A maximum continuous source-drain current (body diode)
  • 871mJ maximum single pulse avalanche energy
  • -55°C to +175°C operating junction temperature range
  • +260°C maximum lead soldering temperature
  • Thermal characteristics
    • 0.23°C/W junction-to-case (top) thermal resistance
    • 38°C/W junction-to-ambient thermal resistance
    • 3.9°C/W junction-to-source lead (pins 1-7) thermal characterization parameter
    • 3.3°C/W junction-to-drain lead (pins 9-16) thermal characterization parameter

Schematic

Schematic - onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
Publicado: 2026-03-20 | Actualizado: 2026-04-14