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onsemi GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Features

  • Fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors
  • Lower switching losses
  • Higher power density for smaller magnetics, compact designs, and greater integration
  • Improved thermal performance
  • Voltage range from 40V to 650V and 650V
  • Integrated protection features
  • High-frequency performance offers faster switching for advanced conversion stages
  • Thermally enhanced packages
  • Industry-standard footprints for dual sourcing
  • Made for deployment-ready systems

Applications

  • Automotive electrification
  • Industrial automation
  • AI data center and cloud infrastructure
  • Physical AI, robotics, and industrial power
  • Energy infrastructure

Videos

GaN Power Conversion Architecture

Infographic - onsemi GaNEXUS™ GaN FETs

Additional Resources

View Results ( 7 ) Page
N.º de artículo Hoja de datos Id - Corriente de drenaje continua Paquete / Cubierta Dp - Disipación de potencia Qg - Carga de puerta Rds On - Resistencia entre drenaje y fuente Vds - Tensión disruptiva entre drenaje y fuente Vgs - Tensión entre puerta y fuente
NTD100N70GN1TXG NTD100N70GN1TXG Hoja de datos 21 A DPAK-3 105 W 3.8 nC 100 mOhms 700 V - 6 V, + 7 V
NTMT100N70GN1TXG NTMT100N70GN1TXG Hoja de datos 21 A DFN-9 111 W 3.8 nC 100 mOhms 700 V - 6 V, + 7 V
NTMT130N70GN1TXG NTMT130N70GN1TXG Hoja de datos 16 A DFN-9 84 W 2.65 nC 130 mOhms 700 V - 6 V, + 7 V
NTMT170N70GN1TXG NTMT170N70GN1TXG Hoja de datos 12 A DFN-9 69 W 2.1 nC 170 mOhms 700 V - 6 V, + 7 V
NTD170N70GN1TXG NTD170N70GN1TXG Hoja de datos 12 A PDSO-E3 64 W 2.1 nC 170 mOhms 700 V - 6 V, + 7 V
NTLCC3D5N10GN1TWG NTLCC3D5N10GN1TWG Hoja de datos 183 A PTFP-N9 250 W 7.3 nC 2.7 mOhms 100 V - 4 V to 6 V
NTLCC5D0N10GN1TWG NTLCC5D0N10GN1TWG Hoja de datos 146 A PTFP-N9 208 W 5.2 nC 3.8 mOhms 100 V - 4 V to 6 V
Publicado: 2026-06-17 | Actualizado: 2026-08-31