GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Features
- Come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package:
- 9% reduction in junction-to-case thermal resistance
- 30% smaller PCB footprint
- 50% lower height
- 60% smaller size than traditional D2PAK-7L
- Minimal package inductance (2nH) for fast switching and low dynamic losses
- Optimized for faster switching speeds, higher efficiency, and increased power density
- Developed using a proprietary ‘trench-assisted planar’ technology
Applications
- AI data center power supplies
- EV charging
- Energy storage systems
- Solar solutions
Specifications
- 650V voltage rating
- 20mΩ to 55mΩ low on-resistance range
- 97% peak efficiency at 137W/inch³ power density
Related MOSFETs
GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Publicado: 2024-08-26
| Actualizado: 2025-10-21