Linear Integrated Systems 3N163 P-Channel Enhancement Mode MOSFETs

Linear Integrated Systems 3N163 P-Channel Enhancement Mode MOSFETs feature high input impedance, high gate breakdown, ultra-low leakage, and low capacitance. These MOSFETs offer -40V drain-source or drain-gate voltage, 50mA drain current, and 375mW (TO-72 case), and 350mW (SOT-143 case) power dissipation. The 3N163 P-Channel MOSFETs are available in the TO-72 RoHS, SOT-143 RoHS package, and as bare die. These MOSFETs are ideal for amplifier and switching applications.

Features

Very high input impedance
High gate breakdown

Ultra-low leakage
Low capacitance

Specifications

-40V Drain-source breakdown voltage (I_D=-10µA, V_GS=0V, V_BS=0V)
-2V to -5V threshold voltage range (V_DS=V_GS, I_D=-10µA, V_SB=0V)
-3V to -6.5V gate-source voltage (on) (V_DS=-15V, I_D=-0.5mA, V_SB=0V)
250Ω drain-source on resistance (V_GS=-20V, I_D=-100µA, V_SB=0V)
-5mA to -30mA on drain current range (V_DS=-15V, V_GS=-10V, V_SB=0V)
2mS to 4mS forward transconductance range (V_DS=-15V, I_D=-10mA, f=1kHz)
250μS output admittance ( V_DS=-15V, I_D=-10mA, f=1kHz)

Capacitance (V_DS=-15V, I_D=-10mA, f=1MHz):
- 3.5pF input (output shorted)
- 0.7pF reverse transfer
- 3pF output (input shorted)
Switching characteristics (V_DD=-15V, V_SB=0V, I_D(on)=-10mA, R_G=R_L=1.4K, T_A= 25°C):
- 12ns turn-on delay time
- 24ns rise time
- 50ns turn-off time