Infineon Technologies XHP™ 2 CoolSiC™ MOSFET Half-Bridge Modules
Infineon Technologies XHP™ 2 CoolSiC™ MOSFET Half-Bridge Modules are designed for applications ranging from 1.7kV to 3.3kV, featuring three AC terminals and four DC terminals to maximize current-carrying capabilities. The simple scalability of XHP 2 frame size, owing to the basic modular concept, makes these modules ready for future chip generations and fast-switching devices, enabling low losses. These modules offer low switching losses and high current density, enabled by a low inductive design. Mechanically, the modules provide high power density in a package with a Comparative Tracking Index (CTI) greater than 600, ensuring high creepage and clearance distances. An AlSiC base plate enhances thermal cycling capabilities, making these modules ideal for demanding applications.
Features
- Scalable design
- Low switching losses
- High current/power density
- Low inductive design
- Best-in-class reliability
- N-channel polarity
- Screw mount
- Package with CTI > 600
- Dual configuration
- High creepage and clearance distances
- AlSiC base plate for increased thermal cycling capability
- AlN substrate with low thermal resistance
Applications
- Traction
- Medium voltage (MV) drives
- Commercial vehicle solutions
- High-power converters
- High-frequency switching application
Specifications
- 2.3kV or 3.3kV drain-source breakdown voltage
- 500A to 2000A continuous drain current range
- 3.45V to 5.15V gate-source threshold voltage range
- -7V/+20V or -10V to +23V gate source voltage options
- 4.6V or 5V forward voltage option
- 2.4mΩ to 4.8mΩ on-drain-source resistance range
- 20mW power dissipation
- 210ns to 490ns typical turn-on delay time range
- 95ns to 170ns rise time range
- 30ns to 380ns typical turn-off delay time range
- 60ns to 105ns fall time range
- -40°C to +150°/+175°C operting temperature range
- 144mm x 99.8mm x 40mm (LxWxH) size
Resources
- AN2024-03 - Application and Assembly Note
Publicado: 2024-07-19
| Actualizado: 2025-10-28