Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.

Features

  • Highly robust 750V technology, 100% avalanche tested
  • Superior RDS(on) x Qfr
  • Excellent RDS(on) x Qoss and RDS(on) x QG
  • Unique combination of low Crss/Ciss and high VGS(th)
  • Infineon's proprietary die-attach technology
  • TSC package with material group I
  • Driver source pin available
  • Enhanced robustness and reliability for bus voltages beyond 500V
  • Superior efficiency in hard switching
  • Higher switching frequency in soft switching topologies
  • Robustness against parasitic turn-on for unipolar gate driving
  • Excellent thermal dissipation
  • Reduced switching losses through improved gate control
  • Industrial qualified

Applications

  • Uni‑ and bi-directional onboard chargers and HV‑LV DC-DC converters
  • Circuit breakers:
    • HV battery disconnect switches
    • DC and AC low-frequency switches
    • HV E‑fuses
  • Solid state relays
  • EV charging infrastructures
  • Solar PV inverters and UPS
  • Energy storage and battery formation
  • Telecom and server SMPS
Publicado: 2025-04-24 | Actualizado: 2025-11-24