Comchip Technology AGT4350R-HF Silicon Epitaxial Planar Transistor

Comchip Technology AGT4350R-HF Silicon Epitaxial Planar Transistor features AEC-Q101 qualification along with low collector-emitter saturation voltage VCE(sat) and corresponding low RCE(sat). This RoHS device is constructed with a molded plastic SOT-223 case with reduced heat generation for improved efficiency. Additional features include high collector current capability, high collector current gain, and both an operating junction and storage temperature range of -55°C to +150°C. Comchip Technology AGT4350R-HF Silicon Epitaxial Planar Transistor is halogen free and comes with tin-plated terminals.

Features

  • Low collector-emitter saturation voltage VCE(sat) and corresponding low RCE(sat)
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation
  • SOT-223 molded plastic case
  • UL 94V-0 molding compound
  • Tin-plated terminals, solderability per MIL-STD-202, method 208
  • -55°C to +150°C operating junction and storage temperature range
  • AEC-Q101 qualified
  • Halogen free
  • RoHS device

Dimensions - in (mm)

Mechanical Drawing - Comchip Technology AGT4350R-HF Silicon Epitaxial Planar Transistor

Circuit Diagram

Application Circuit Diagram - Comchip Technology AGT4350R-HF Silicon Epitaxial Planar Transistor
Publicado: 2024-09-06 | Actualizado: 2024-09-12