El/los Semiconductores discretos más reciente(s)

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Tipos de Semiconductores discretos

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Fabricante = IXYS Regrese a la ficha de Productos para modificar sus filtros actuales.

IXYS Módulos de diodos de ruptura IXBOD2

09/22/2026

- Provides fast and reliable overvoltage protection in demanding power electronics applications.

IXYS MOSFET de SiC IXSH50N120L3KHV

09/02/2026

- 1200V, 55mΩ, and 48.3A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH150N120L3KHV

09/02/2026

- 1200V, 13.5mΩ, and 147A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH100N120L3KHV

09/02/2026

- 1200V, 21mΩ, and 102A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH110N120L3KHV

09/02/2026

- 1200V, 18mΩ, and 112A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH65N120L3KHV

09/02/2026

- 1200V, 35mΩ, and 67A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS SCR sensibles SK002xSx

08/27/2026

- Sensitive SCRs with microprocessor drive support and high noise immunity.

IXYS Retificador de 1,000 V 10 A DK010S3ARP

07/20/2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

IXYS Diodo rectificador de propósito general de 1,600 V DK610S3RP

07/20/2026

- Space-saving, ideal for automated assembly, and well-suited for DC phase-control applications.

IXYS MOSFET de potencia X4-Class

02/02/2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

IXYS Diodos de recuperación rápida de alto voltaje DP

01/20/2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

IXYS MOSFET de potencia de 200 V MMIX1T500N20X4 / X4-Class

10/08/2025

- Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

09/19/2025

- These devices have a high blocking voltage with low on-state resistance [RDS(ON)].

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

08/27/2025

- Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).

IXYS Rectificadores de silicio automotrices serie Dx

04/14/2025

- Features glass-passivated junctions, ensuring stable operation and high reliability.

IXYS Diodos Schottky SiC DCK

04/03/2025

- Features high-frequency operation and high surge current capability.

IXYS Módulo de diodo tiristor MCMA140PD1800TB

03/25/2025

- 140A diode module, integrated with a planar passivated chip and offers long-term stability.

IXYS MOSFET de potencia IXFP34N65X2W

03/17/2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS MOSFET SiC IXSA80N120L2-7

03/06/2025

- Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.

IXYS MOSFET SiC IXSA40N120L2-7

03/06/2025

- Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.

IXYS MOSFET de potencia IXFH46N65X2W

02/27/2025

- 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS MOSFET de potencia IXFH34N65X2W

02/27/2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS MOSFET de SiC IXSH80N120L2KHV

02/18/2025

- 1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS MOSFET de SiC IXSH40N120L2KHV

02/18/2025

- 1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS IXTNx00N20X4 miniBLOC MOSFETs

11/28/2024

- Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.

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Qorvo QPD1000A GaN Input Matched Transistor

10/14/2026

- 50Ω input-matched discrete GaN-on-SiC HEMT that operates from 30MHz-1215MHz on a 28V supply rail.

Qorvo QPD1426/QPD1426L GaN RF Power Transistors

10/06/2026

- 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz.

Qorvo QPD2562L GaN RF Power Transistor

10/06/2026

- A 200W to 300W discrete GaN-on-SiC HEMT that operates from 2.5GHz to 2.9GHz and 2.9GHz to 3.3GHz.

Littelfuse Diodos TVS con terminales axiales AK8-FB

10/05/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diodo TVS LTKAK1.5-L

10/05/2026

- Offers a clamping voltage lower than alternative technologies such as MOVs and GDTs.

Littelfuse Diodos TVS con terminales axiales AK6-FB

10/05/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

10/02/2026

- 1400V CoolSiC MOSFET module for electric commercial-vehicle traction inverters.

Littelfuse Matriz de diodos TVS SP4315-01WTG

10/01/2026

- Ultra-low capacitance, bidirectional design, and protects electronic equipment from destructive ESD.

IXYS Módulos de diodos de ruptura IXBOD2

09/22/2026

- Provides fast and reliable overvoltage protection in demanding power electronics applications.

Littelfuse Diodos Schottky de barrera de silicio para la industria automotriz DSxARP

09/22/2026

- Provides low forward voltage drop and stable electrical performance.

onsemi NVMTS1D1N08X N‐Channel Power MOSFETs

09/17/2026

- 80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Vishay SQD50P04-09L 40V Automotive P-Channel Power MOSFET

09/16/2026

- The device is ideal for automotive, power distribution, and industrial power control applications.

STMicroelectronics TVS221SC-1T2 Unidirectional Single Line TVS

09/15/2026

- Designed to protect the power line or other low-speed I/O against ESD and small surge transients.

MACOM MLP7102-0503 PIN Diode

09/14/2026

- Designed for use in passive or active limiters from 100MHz to beyond 20GHz frequency range.

onsemi ESDM1021 ESD Protection Diode

09/14/2026

- Compact 2V bidirectional ESD diode for GPIO and low-voltage power-line protection.

Littelfuse Diodos TVS con terminales axiales AK1-A

09/10/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diodos TVS con terminales axiales AK10-FB

09/10/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diodo TVS para automoción TP7.0SMD-XC

09/10/2026

- Protects sensitive electronic equipment from voltage transients induced by lightning.

Littelfuse Diodos TVS con terminales axiales AK3-FB

09/10/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diodos TVS con terminales axiales AK3-A

09/10/2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Texas Instruments JFE2325 Dual Low-Power N-Channel JFET

09/09/2026

- Intended for use with very high-impedance sensors such as electret condenser microphones (ECMs).

IXYS MOSFET de SiC IXSH110N120L3KHV

09/02/2026

- 1200V, 18mΩ, and 112A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH65N120L3KHV

09/02/2026

- 1200V, 35mΩ, and 67A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH150N120L3KHV

09/02/2026

- 1200V, 13.5mΩ, and 147A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET de SiC IXSH50N120L3KHV

09/02/2026

- 1200V, 55mΩ, and 48.3A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

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