ADPA1112AEJZ

Name: Analog Devices Inc. ADPA1112AEJZ
Brand: Analog Devices
SKU: 584-ADPA1112AEJZ
Price: 1490.6 USD
Availability: InStock

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Mouser #:

584-ADPA1112AEJZ

Mfr. #:

ADPA1112AEJZ

Mfr.:

Analog Devices

Description:

RF Amplifier 1-22GHz 15W PA

Datasheet:

ADPA1112AEJZ Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Analog Devices Inc.
Product Category:	RF Amplifier
Shipping Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Operating Frequency:	1 GHz to 22 GHz
Operating Supply Voltage:	28 V
Gain:	23 dB
Type:	Power Amplifiers
Mounting Style:	SMD/SMT
Package / Case:	LDCC-14
Technology:	GaN
OIP3 - Third Order Intercept:	46 dBm
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	ADPA1112
Packaging:	Tray
Brand:	Analog Devices
Input Return Loss:	10 dB
Number of Channels:	1 Channel
Pd - Power Dissipation:	56.9 W
Product Type:	RF Amplifier
Factory Pack Quantity:	136
Subcategory:	Wireless & RF Integrated Circuits

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Datasheet

ADPA1112AEJZ Datasheet

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Compliance Codes

CAHTS:: 8542330000
USHTS:: 8542330001
MXHTS:: 8542330299
ECCN:: 3A001.b.2.c

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: United States
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

ADPA1112 GaN Power Amplifiers

Analog Devices ADPA1112 Gallium Nitride (GaN) Power Amplifiers are 15W, 1GHz to 22GHz wideband power amplifiers. The ADI ADPA1112 amplifiers feature a saturated output power (P_OUT) of 42dBm, power added efficiency (PAE) of 25%, and a power gain of 14dB typical from 8GHz to 16GHz at input power (P_IN) of 28.0dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage (V_DD) of 28V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin. A temperature-compensated RF detector is integrated, allowing monitoring of the RF output power. These GaN-processed devices operate within a -40°C to +85°C range.