|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
$5.80
-
2,238En existencias
|
N.º de artículo de Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,238En existencias
|
|
|
$5.80
|
|
|
$3.04
|
|
|
$2.77
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
$8.11
-
3,487En existencias
|
N.º de artículo de Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,487En existencias
|
|
|
$8.11
|
|
|
$4.38
|
|
|
$4.02
|
|
|
$3.91
|
|
|
$3.69
|
|
|
$3.69
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
$9.49
-
220En existencias
|
N.º de artículo de Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
220En existencias
|
|
|
$9.49
|
|
|
$5.30
|
|
|
$4.89
|
|
|
$4.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$5.80
-
358En existencias
-
25,000En pedido
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
358En existencias
25,000En pedido
Existencias:
358 Se puede enviar inmediatamente
En pedido:
2,500 Se espera el 17/9/2026
22,500 Se espera el 22/10/2026
Plazo de entrega de fábrica:
20 Semanas
|
|
|
$5.80
|
|
|
$3.04
|
|
|
$2.77
|
|
|
$2.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
$10.73
-
9,056En existencias
-
3,840Se espera el 20/8/2026
|
N.º de artículo de Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
9,056En existencias
3,840Se espera el 20/8/2026
|
|
|
$10.73
|
|
|
$6.35
|
|
|
$5.39
|
|
|
$5.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
$4.15
-
23,007En existencias
-
23,760Se espera el 25/2/2027
|
N.º de artículo de Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
23,007En existencias
23,760Se espera el 25/2/2027
|
|
|
$4.15
|
|
|
$2.05
|
|
|
$1.87
|
|
|
$1.55
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$3.34
-
7,585En existencias
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,585En existencias
|
|
|
$3.34
|
|
|
$1.67
|
|
|
$1.51
|
|
|
$1.22
|
|
|
$1.12
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R060P7XKSA1
- Infineon Technologies
-
1:
$7.08
-
2,993En existencias
|
N.º de artículo de Mouser
726-IPA60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,993En existencias
|
|
|
$7.08
|
|
|
$3.76
|
|
|
$3.44
|
|
|
$2.87
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R099P7XKSA1
- Infineon Technologies
-
1:
$5.14
-
824En existencias
|
N.º de artículo de Mouser
726-IPA60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
824En existencias
|
|
|
$5.14
|
|
|
$2.67
|
|
|
$2.43
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
$4.43
-
1,873En existencias
|
N.º de artículo de Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,873En existencias
|
|
|
$4.43
|
|
|
$2.27
|
|
|
$2.06
|
|
|
$1.68
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
$7.69
-
728En existencias
-
4,000Se espera el 3/9/2026
|
N.º de artículo de Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
728En existencias
4,000Se espera el 3/9/2026
|
|
|
$7.69
|
|
|
$5.09
|
|
|
$4.24
|
|
|
$3.86
|
|
|
$3.58
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
$6.57
-
1,255En existencias
|
N.º de artículo de Mouser
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,255En existencias
|
|
|
$6.57
|
|
|
$3.72
|
|
|
$3.38
|
|
|
$2.99
|
|
|
$2.82
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
$5.44
-
1,202En existencias
|
N.º de artículo de Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,202En existencias
|
|
|
$5.44
|
|
|
$2.82
|
|
|
$2.56
|
|
|
$2.12
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
$4.43
-
5,255En existencias
|
N.º de artículo de Mouser
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,255En existencias
|
|
|
$4.43
|
|
|
$2.27
|
|
|
$2.06
|
|
|
$1.74
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
$2.88
-
2,294En existencias
-
12,500Se espera el 29/10/2026
|
N.º de artículo de Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,294En existencias
12,500Se espera el 29/10/2026
|
|
|
$2.88
|
|
|
$1.43
|
|
|
$1.29
|
|
|
$1.04
|
|
|
$0.971
|
|
|
$0.918
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
$2.20
-
9,846En existencias
-
7,500Se espera el 22/7/2027
|
N.º de artículo de Mouser
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
9,846En existencias
7,500Se espera el 22/7/2027
|
|
|
$2.20
|
|
|
$1.07
|
|
|
$0.953
|
|
|
$0.758
|
|
|
$0.729
|
|
|
$0.634
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
$5.36
-
1,256En existencias
-
6,000En pedido
|
N.º de artículo de Mouser
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,256En existencias
6,000En pedido
Existencias:
1,256 Se puede enviar inmediatamente
En pedido:
3,000 Se espera el 26/8/2026
3,000 Se espera el 7/10/2026
Plazo de entrega de fábrica:
39 Semanas
|
|
|
$5.36
|
|
|
$3.27
|
|
|
$2.64
|
|
|
$2.30
|
|
|
$2.25
|
|
|
$2.10
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$4.14
-
7,612En existencias
-
3,000Se espera el 10/12/2026
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,612En existencias
3,000Se espera el 10/12/2026
|
|
|
$4.14
|
|
|
$2.23
|
|
|
$2.02
|
|
|
$1.71
|
|
|
$1.68
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
$3.29
-
3,692En existencias
|
N.º de artículo de Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,692En existencias
|
|
|
$3.29
|
|
|
$1.64
|
|
|
$1.48
|
|
|
$1.20
|
|
|
$1.18
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R060P7XKSA1
- Infineon Technologies
-
1:
$6.85
-
951En existencias
-
6,000En pedido
|
N.º de artículo de Mouser
726-IPP60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
951En existencias
6,000En pedido
Existencias:
951 Se puede enviar inmediatamente
En pedido:
1,000 Se espera el 19/8/2026
5,000 Se espera el 25/2/2027
Plazo de entrega de fábrica:
26 Semanas
|
|
|
$6.85
|
|
|
$3.76
|
|
|
$3.44
|
|
|
$3.18
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
$14.15
-
289En existencias
-
720Se espera el 14/9/2026
|
N.º de artículo de Mouser
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
289En existencias
720Se espera el 14/9/2026
|
|
|
$14.15
|
|
|
$8.58
|
|
|
$7.60
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
- 20 V, 20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
$7.06
-
3,520En existencias
|
N.º de artículo de Mouser
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,520En existencias
|
|
|
$7.06
|
|
|
$3.68
|
|
|
$3.38
|
|
|
$3.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$5.64
-
648En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
648En existencias
|
|
|
$5.64
|
|
|
$3.00
|
|
|
$2.74
|
|
|
$2.53
|
|
|
$2.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
-
1:
$12.33
-
254En existencias
|
N.º de artículo de Mouser
726-IPZA60R037P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
254En existencias
|
|
|
$12.33
|
|
|
$6.80
|
|
|
$6.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.75
-
778En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPAN60R180P7SXKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
778En existencias
|
|
|
$2.75
|
|
|
$1.35
|
|
|
$1.22
|
|
|
$1.06
|
|
|
$0.847
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|