MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Resultados: 35
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package 2,760En existencias
$6.40
$3.38
$3.09
$2.95
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag 598En existencias
$12.13
$7.34
$6.09
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 58 mOhms 25 V 3 V 88 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 7,581En existencias
Cinta cortada
$4.42
$2.26
$2.05
$1.71
$1.70
Envase tipo carrete
$1.59
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 15 A 195 mOhms 25 V 3 V 29 nC - 55 C + 150 C 125 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package 848En existencias
Cinta cortada
$5.96
$3.13
$2.86
$2.60
Envase tipo carrete
$2.42
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 130 mOhms 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package 562En existencias
Cinta cortada
$6.77
$4.03
$3.27
$2.96
Envase tipo carrete
$2.72
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP packa 538En existencias
$6.46
$3.42
$3.13
$2.70
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 3,082En existencias
Cinta cortada
$2.47
$1.21
$1.09
$0.864
$0.817
Envase tipo carrete
$0.733
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 310 mOhms 25 V 3 V 19 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package 1,402En existencias
2,500Se espera el 12/2/2027
Cinta cortada
$2.15
$1.22
$0.922
$0.736
$0.732
Envase tipo carrete
$0.593
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms 25 V 3 V 15 nC - 55 C + 150 C 109 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP packag 1,740En existencias
$2.37
$1.15
$1.04
$0.823
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms 25 V 3 V 15 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP packa 444En existencias
$4.46
$2.28
$2.07
$1.70
$1.64
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 130 mOhms 25 V 3 V 34 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag 1,022En existencias
$3.86
$2.17
$1.76
$1.48
$1.40
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 175 mOhms 25 V 3 V 29 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 1,078En existencias
Cinta cortada
$2.50
$1.22
$1.10
$0.876
$0.85
Envase tipo carrete
$0.755
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 11 A 350 mOhms 25 V 4 V 120 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag 1,578En existencias
$6.52
$3.46
$3.16
$2.76
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 2,185En existencias
Cinta cortada
$2.98
$1.48
$1.33
$1.07
$1.03
Envase tipo carrete
$0.945
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 8 A 350 mOhms 25 V 3 V 19 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 1,297En existencias
Cinta cortada
$5.90
$3.10
$2.83
$2.56
$2.47
Envase tipo carrete
$2.42
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21 A 115 mOhms 25 V 3 V 43 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package 782En existencias
$8.60
$4.57
$4.21
$4.00
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package 1,095En existencias
$11.92
$7.68
$7.09
$6.21
$5.98
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 66 A 42 mOhms 25 V 3 V 121 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package 79En existencias
1,000Se espera el 2/7/2027
Cinta cortada
$4.10
$2.44
$1.84
$1.52
Envase tipo carrete
$1.43
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package 60En existencias
Cinta cortada
$4.67
$2.48
$2.25
$1.92
Envase tipo carrete
$1.67
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 130 mOhms 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package 1,198En existencias
Cinta cortada
$1.44
$0.675
$0.60
$0.512
Envase tipo carrete
$0.363
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.38 Ohms 30 V 3 V 8.6 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack 94En existencias
$2.88
$1.42
$1.28
$1.03
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11 A 299 mOhms 25 V 4 V 120 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack 812En existencias
$2.91
$1.45
$1.28
$1.08
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 310 mOhms 25 V 3 V 19 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP pack 704En existencias
$5.29
$2.75
$2.50
$2.07
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 110 mOhms 25 V 3 V 43 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 610En existencias
$4.26
$2.17
$1.97
$1.62
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package 704En existencias
1,000Se espera el 3/9/2027
$5.21
$2.71
$2.46
$2.42
$2.04
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 130 mOhms 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube