|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 400V-0.49ohms Zener SuperMESH 9A
- STP11NK40ZFP
- STMicroelectronics
-
1:
$3.15
-
1,255En existencias
|
N.º de artículo de Mouser
511-STP11NK40ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 400V-0.49ohms Zener SuperMESH 9A
|
|
1,255En existencias
|
|
|
$3.15
|
|
|
$1.58
|
|
|
$1.42
|
|
|
$1.16
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
9 A
|
550 mOhms
|
- 30 V, 30 V
|
4.5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190ohm 16A Mdmesh
- STP22NM60N
- STMicroelectronics
-
1:
$4.83
-
599En existencias
|
N.º de artículo de Mouser
511-STP22NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190ohm 16A Mdmesh
|
|
599En existencias
|
|
|
$4.83
|
|
|
$2.58
|
|
|
$2.29
|
|
|
$1.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
200 mOhms
|
- 30 V, 30 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
- STP24NM60N
- STMicroelectronics
-
1:
$4.17
-
636En existencias
|
N.º de artículo de Mouser
511-STP24NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
|
|
636En existencias
|
|
|
$4.17
|
|
|
$2.19
|
|
|
$1.90
|
|
|
$1.73
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
168 mOhms
|
- 30 V, 30 V
|
3 V
|
46 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 2.1Amp Zener SuperMESH
- STP2NK90Z
- STMicroelectronics
-
1:
$2.63
-
817En existencias
|
N.º de artículo de Mouser
511-STP2NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 2.1Amp Zener SuperMESH
|
|
817En existencias
|
|
|
$2.63
|
|
|
$1.32
|
|
|
$1.19
|
|
|
$1.02
|
|
|
$0.878
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
2.1 A
|
6.5 Ohms
|
- 30 V, 30 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
- STP33N60M6
- STMicroelectronics
-
1:
$5.03
-
673En existencias
|
N.º de artículo de Mouser
511-STP33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
673En existencias
|
|
|
$5.03
|
|
|
$3.34
|
|
|
$2.38
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
125 mOhms
|
- 25 V, 25 V
|
3.25 V
|
33.4 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
- STP5N80K5
- STMicroelectronics
-
1:
$2.30
-
1,143En existencias
|
N.º de artículo de Mouser
511-STP5N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
1,143En existencias
|
|
|
$2.30
|
|
|
$1.09
|
|
|
$0.883
|
|
|
$0.767
|
|
|
$0.709
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.5 Ohms
|
- 30 V, 30 V
|
3 V
|
5 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 4.3 A Zener SuperMESH
- STP5NK80ZFP
- STMicroelectronics
-
1:
$3.33
-
994En existencias
|
N.º de artículo de Mouser
511-STP5NK80ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 4.3 A Zener SuperMESH
|
|
994En existencias
|
|
|
$3.33
|
|
|
$1.67
|
|
|
$1.51
|
|
|
$1.23
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4.3 A
|
2.4 Ohms
|
- 30 V, 30 V
|
3 V
|
32.4 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in a TO-220 package
- STP7N105K5
- STMicroelectronics
-
1:
$3.65
-
907En existencias
|
N.º de artículo de Mouser
511-STP7N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in a TO-220 package
|
|
907En existencias
|
|
|
$3.65
|
|
|
$1.85
|
|
|
$1.67
|
|
|
$1.59
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
4 A
|
2 Ohms
|
- 30 V, 30 V
|
4 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package
- STQ2HNK60ZR-AP
- STMicroelectronics
-
1:
$1.34
-
3,767En existencias
|
N.º de artículo de Mouser
511-STQ2HNK60ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package
|
|
3,767En existencias
|
|
|
$1.34
|
|
|
$0.845
|
|
|
$0.56
|
|
|
$0.444
|
|
|
$0.397
|
|
|
$0.346
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
600 V
|
500 mA
|
4.8 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
SuperMESH
|
Ammo Pack
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package
- STS5P3LLH6
- STMicroelectronics
-
1:
$0.98
-
7,919En existencias
|
N.º de artículo de Mouser
511-STS5P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package
|
|
7,919En existencias
|
|
|
$0.98
|
|
|
$0.61
|
|
|
$0.398
|
|
|
$0.306
|
|
|
$0.252
|
|
|
Ver
|
|
|
$0.277
|
|
|
$0.251
|
|
|
$0.222
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
1 Channel
|
30 V
|
5 A
|
48 mOhms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
2.7 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 packag
- STW40N95DK5
- STMicroelectronics
-
1:
$15.28
-
697En existencias
|
N.º de artículo de Mouser
511-STW40N95DK5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 packag
|
|
697En existencias
|
|
|
$15.28
|
|
|
$9.38
|
|
|
$9.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
38 A
|
120 mOhms
|
- 30 V, 30 V
|
3 V
|
100 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250 Volt 52 Amp Zener SuperMESH
- STW52NK25Z
- STMicroelectronics
-
1:
$7.08
-
394En existencias
|
N.º de artículo de Mouser
511-STW52NK25Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250 Volt 52 Amp Zener SuperMESH
|
|
394En existencias
|
|
|
$7.08
|
|
|
$4.07
|
|
|
$3.41
|
|
|
$3.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
250 V
|
52 A
|
45 mOhms
|
- 30 V, 30 V
|
4.5 V
|
160 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
- STW7N95K3
- STMicroelectronics
-
1:
$6.93
-
574En existencias
|
N.º de artículo de Mouser
511-STW7N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
|
|
574En existencias
|
|
|
$6.93
|
|
|
$3.98
|
|
|
$3.33
|
|
|
$3.26
|
|
|
$3.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
7.2 A
|
1.35 Ohms
|
- 30 V, 30 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
- STW88N65M5-4
- STMicroelectronics
-
1:
$17.11
-
166En existencias
|
N.º de artículo de Mouser
511-STW88N65M5-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
|
|
166En existencias
|
|
|
$17.11
|
|
|
$10.61
|
|
|
$10.58
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
84 A
|
29 mOhms
|
- 25 V, 25 V
|
3 V
|
204 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
- STW9NK95Z
- STMicroelectronics
-
1:
$4.00
-
777En existencias
|
N.º de artículo de Mouser
511-STW9NK95Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
|
|
777En existencias
|
|
|
$4.00
|
|
|
$2.20
|
|
|
$1.81
|
|
|
$1.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
7 A
|
1.38 Ohms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
- STWA75N60M6
- STMicroelectronics
-
1:
$10.39
-
492En existencias
|
N.º de artículo de Mouser
511-STWA75N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
|
|
492En existencias
|
|
|
$10.39
|
|
|
$6.27
|
|
|
$5.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
72 A
|
36 mOhms
|
- 25 V, 25 V
|
3.25 V
|
106 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
- STB100N6F7
- STMicroelectronics
-
1:
$2.19
-
1,291En existencias
|
N.º de artículo de Mouser
511-STB100N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
|
|
1,291En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.951
|
|
|
$0.758
|
|
|
$0.695
|
|
|
$0.679
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
5.6 mOhms
|
- 20 V, 20 V
|
2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
- STB34NM60N
- STMicroelectronics
-
1:
$10.55
-
970En existencias
|
N.º de artículo de Mouser
511-STB34NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
|
|
970En existencias
|
|
|
$10.55
|
|
|
$7.37
|
|
|
$6.13
|
|
|
$5.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
92 mOhms
|
- 25 V, 25 V
|
2 V
|
84 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
- STD2NC45-1
- STMicroelectronics
-
1:
$0.68
-
5,449En existencias
|
N.º de artículo de Mouser
511-STD2NC45-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
|
|
5,449En existencias
|
|
|
$0.68
|
|
|
$0.555
|
|
|
$0.42
|
|
|
$0.33
|
|
|
Ver
|
|
|
$0.275
|
|
|
$0.248
|
|
|
$0.221
|
|
|
$0.212
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
450 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
2.3 V
|
7 nC
|
- 65 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
- STD5N52K3
- STMicroelectronics
-
1:
$1.91
-
1,510En existencias
|
N.º de artículo de Mouser
511-STD5N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
|
|
1,510En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.812
|
|
|
$0.655
|
|
|
$0.588
|
|
|
$0.541
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
4.4 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF11NM50N
- STMicroelectronics
-
1:
$3.83
-
808En existencias
|
N.º de artículo de Mouser
511-STF11NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
808En existencias
|
|
|
$3.83
|
|
|
$2.02
|
|
|
$1.68
|
|
|
$1.57
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
8.5 A
|
470 mOhms
|
- 25 V, 25 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
- STF12N60M2
- STMicroelectronics
-
1:
$1.93
-
2,073En existencias
|
N.º de artículo de Mouser
511-STF12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
2,073En existencias
|
|
|
$1.93
|
|
|
$0.928
|
|
|
$0.826
|
|
|
$0.658
|
|
|
Ver
|
|
|
$0.581
|
|
|
$0.538
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
450 mOhms
|
- 25 V, 25 V
|
4 V
|
16 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.27
-
1,168En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,168En existencias
|
|
|
$3.27
|
|
|
$2.06
|
|
|
$1.63
|
|
|
$1.37
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STF28N60M2
- STMicroelectronics
-
1:
$3.79
-
794En existencias
|
N.º de artículo de Mouser
511-STF28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
794En existencias
|
|
|
$3.79
|
|
|
$1.96
|
|
|
$1.86
|
|
|
$1.54
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24 A
|
120 mOhms
|
- 25 V, 25 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STF38N65M5
- STMicroelectronics
-
1:
$6.06
-
431En existencias
|
N.º de artículo de Mouser
511-STF38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
431En existencias
|
|
|
$6.06
|
|
|
$3.45
|
|
|
$3.15
|
|
|
$2.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
19 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|