|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.38
-
227En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
227En existencias
|
|
|
$3.38
|
|
|
$2.20
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
430 mOhms
|
|
5 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
- STD155N3LH6
- STMicroelectronics
-
1:
$2.36
-
823En existencias
|
N.º de artículo de Mouser
511-STD155N3LH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
|
|
823En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.03
|
|
|
$0.807
|
|
|
$0.762
|
|
|
$0.733
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
80 A
|
3 mOhms
|
- 20 V, 20 V
|
1 V
|
80 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
- STF18N60DM2
- STMicroelectronics
-
1:
$3.08
-
371En existencias
|
N.º de artículo de Mouser
511-STF18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
|
|
371En existencias
|
|
|
$3.08
|
|
|
$2.00
|
|
|
$1.47
|
|
|
$1.23
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
260 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
923En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
923En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.233
|
|
|
Ver
|
|
|
$0.271
|
|
|
$0.219
|
|
|
$0.217
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
4.5 A
|
70 mOhms
|
- 20 V, 20 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.84
-
251En existencias
-
1,000Se espera el 18/5/2026
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
1,000Se espera el 18/5/2026
|
|
|
$2.84
|
|
|
$1.83
|
|
|
$1.31
|
|
|
$1.09
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
589En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
589En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.678
|
|
|
$0.645
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
- STL52DN4LF7AG
- STMicroelectronics
-
1:
$1.74
-
2,805En existencias
|
N.º de artículo de Mouser
511-STL52DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
|
|
2,805En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.735
|
|
|
$0.603
|
|
|
$0.528
|
|
|
$0.479
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
2 Channel
|
40 V
|
18 A
|
16 mOhms
|
- 20 V, 20 V
|
1.5 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
- STB24NM60N
- STMicroelectronics
-
1:
$7.04
-
223En existencias
|
N.º de artículo de Mouser
511-STB24NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
|
|
223En existencias
|
|
|
$7.04
|
|
|
$4.83
|
|
|
$3.61
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
17 A
|
168 mOhms
|
- 30 V, 30 V
|
3 V
|
46 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 7 Amp Zener SuperMESH
- STB9NK60ZT4
- STMicroelectronics
-
1:
$4.10
-
695En existencias
|
N.º de artículo de Mouser
511-STB9NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 7 Amp Zener SuperMESH
|
|
695En existencias
|
|
|
$4.10
|
|
|
$2.70
|
|
|
$1.90
|
|
|
$1.77
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
7 A
|
950 mOhms
|
- 30 V, 30 V
|
3 V
|
53 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.308 Ohm 11A MDmesh M5
- STD15N65M5
- STMicroelectronics
-
1:
$2.95
-
999En existencias
|
N.º de artículo de Mouser
511-STD15N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.308 Ohm 11A MDmesh M5
|
|
999En existencias
|
|
|
$2.95
|
|
|
$1.91
|
|
|
$1.34
|
|
|
$1.11
|
|
|
$1.02
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
340 mOhms
|
- 25 V, 25 V
|
4 V
|
22 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package
- STD6N60DM2
- STMicroelectronics
-
1:
$2.05
-
2,132En existencias
|
N.º de artículo de Mouser
511-STD6N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,132En existencias
|
|
|
$2.05
|
|
|
$1.30
|
|
|
$0.867
|
|
|
$0.71
|
|
|
$0.622
|
|
|
$0.565
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.2 A
|
1.1 Ohms
|
- 20 V, 20 V
|
3.25 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 40 Amp
- STE40NC60
- STMicroelectronics
-
1:
$40.66
-
146En existencias
|
N.º de artículo de Mouser
511-STE40NC60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 40 Amp
|
|
146En existencias
|
|
|
$40.66
|
|
|
$32.91
|
|
|
$30.18
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
ISOTOP-4
|
N-Channel
|
1 Channel
|
600 V
|
40 A
|
130 mOhms
|
- 30 V, 30 V
|
2 V
|
430 nC
|
- 65 C
|
+ 150 C
|
460 W
|
Enhancement
|
|
PowerMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP packa
- STF14N80K5
- STMicroelectronics
-
1:
$3.80
-
794En existencias
|
N.º de artículo de Mouser
511-STF14N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP packa
|
|
794En existencias
|
|
|
$3.80
|
|
|
$2.48
|
|
|
$1.76
|
|
|
$1.44
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
445 mOhms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V 0.25 17A Mdmesh
- STF18NM80
- STMicroelectronics
-
1:
$8.26
-
403En existencias
|
N.º de artículo de Mouser
511-STF18NM80
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V 0.25 17A Mdmesh
|
|
403En existencias
|
|
|
$8.26
|
|
|
$4.42
|
|
|
$4.16
|
|
|
$4.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
70 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF4LN80K5
- STMicroelectronics
-
1:
$2.29
-
1,852En existencias
|
N.º de artículo de Mouser
511-STF4LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
1,852En existencias
|
|
|
$2.29
|
|
|
$1.12
|
|
|
$1.01
|
|
|
$0.80
|
|
|
Ver
|
|
|
$0.723
|
|
|
$0.689
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
2.1 Ohms
|
- 30 V, 30 V
|
3 V
|
3.7 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
- STL260N4F7
- STMicroelectronics
-
1:
$3.67
-
5,403En existencias
|
N.º de artículo de Mouser
511-STL260N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
|
|
5,403En existencias
|
|
|
$3.67
|
|
|
$2.41
|
|
|
$1.69
|
|
|
$1.48
|
|
|
$1.38
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
72 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
- STP12N60M2
- STMicroelectronics
-
1:
$2.35
-
968En existencias
|
N.º de artículo de Mouser
511-STP12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
|
|
968En existencias
|
|
|
$2.35
|
|
|
$1.32
|
|
|
$1.03
|
|
|
$0.834
|
|
|
Ver
|
|
|
$0.747
|
|
|
$0.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
395 mOhms
|
- 25 V, 25 V
|
2 V
|
16 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STP13N95K3
- STMicroelectronics
-
1:
$7.89
-
374En existencias
|
N.º de artículo de Mouser
511-STP13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
374En existencias
|
|
|
$7.89
|
|
|
$4.48
|
|
|
$4.12
|
|
|
$3.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
- STP18N60DM2
- STMicroelectronics
-
1:
$3.18
-
1,235En existencias
|
N.º de artículo de Mouser
511-STP18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
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1,235En existencias
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$3.18
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$1.68
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$1.52
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$1.24
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$1.10
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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12 A
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260 mOhms
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- 25 V, 25 V
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2 V
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20 nC
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- 55 C
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+ 150 C
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90 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
- STP46N60M6
- STMicroelectronics
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1:
$7.40
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994En existencias
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N.º de artículo de Mouser
511-STP46N60M6
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
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994En existencias
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$7.40
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$5.23
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$4.36
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$3.88
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$3.63
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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36 A
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80 mOhms
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- 25 V, 25 V
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3.25 V
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53.5 nC
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- 55 C
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+ 150 C
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250 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
- STP7NK80ZFP
- STMicroelectronics
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1:
$3.87
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810En existencias
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N.º de artículo de Mouser
511-STP7NK80ZFP
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
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810En existencias
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$3.87
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$1.97
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$1.78
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$1.68
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$1.48
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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800 V
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5.2 A
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1.8 Ohms
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- 30 V, 30 V
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3 V
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40 nC
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- 55 C
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+ 150 C
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30 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
- STP8N90K5
- STMicroelectronics
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1:
$3.77
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788En existencias
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N.º de artículo de Mouser
511-STP8N90K5
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
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788En existencias
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$3.77
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$1.96
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$1.77
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$1.45
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$1.40
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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900 V
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8 A
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680 mOhms
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- 30 V, 30 V
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5 V
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11 nC
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- 55 C
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+ 150 C
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130 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
- STU7N80K5
- STMicroelectronics
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1:
$2.63
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1,841En existencias
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N.º de artículo de Mouser
511-STU7N80K5
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
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1,841En existencias
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$2.63
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$1.22
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$1.10
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$0.932
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$0.835
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-251-3
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N-Channel
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1 Channel
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800 V
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6 A
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950 mOhms
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- 30 V, 30 V
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4 V
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13.4 nC
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- 55 C
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+ 150 C
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110 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STW13N95K3
- STMicroelectronics
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1:
$8.63
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1,107En existencias
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N.º de artículo de Mouser
511-STW13N95K3
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
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1,107En existencias
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$8.63
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$6.28
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$5.23
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$4.36
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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950 V
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10 A
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680 mOhms
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- 30 V, 30 V
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4 V
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51 nC
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- 55 C
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+ 150 C
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190 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
- STW33N60M6
- STMicroelectronics
-
1:
$5.65
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427En existencias
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N.º de artículo de Mouser
511-STW33N60M6
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
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427En existencias
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$5.65
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$4.07
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$2.94
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$2.72
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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26 A
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125 mOhms
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- 25 V, 25 V
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3.25 V
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33.4 nC
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- 55 C
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+ 150 C
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190 W
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Enhancement
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MDmesh
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Tube
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