|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
- STB8N90K5
- STMicroelectronics
-
1:
$4.09
-
1,178En existencias
|
N.º de artículo de Mouser
511-STB8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
1,178En existencias
|
|
|
$4.09
|
|
|
$2.69
|
|
|
$1.90
|
|
|
$1.71
|
|
|
$1.48
|
|
|
$1.39
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
- STD13NM60ND
- STMicroelectronics
-
1:
$5.16
-
4,330En existencias
|
N.º de artículo de Mouser
511-STD13NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
|
|
4,330En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 1.0Amp Zener SuperMESH
- STD1NK60T4
- STMicroelectronics
-
1:
$1.26
-
8,222En existencias
|
N.º de artículo de Mouser
511-STD1NK60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 1.0Amp Zener SuperMESH
|
|
8,222En existencias
|
|
|
$1.26
|
|
|
$0.884
|
|
|
$0.659
|
|
|
$0.52
|
|
|
$0.389
|
|
|
Ver
|
|
|
$0.473
|
|
|
$0.375
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
- STD3N62K3
- STMicroelectronics
-
1:
$1.55
-
8,530En existencias
|
N.º de artículo de Mouser
511-STD3N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
|
|
8,530En existencias
|
|
|
$1.55
|
|
|
$0.983
|
|
|
$0.656
|
|
|
$0.515
|
|
|
$0.399
|
|
|
Ver
|
|
|
$0.47
|
|
|
$0.392
|
|
|
$0.37
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
- STD5N52U
- STMicroelectronics
-
1:
$1.70
-
3,742En existencias
|
N.º de artículo de Mouser
511-STD5N52U
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
|
|
3,742En existencias
|
|
|
$1.70
|
|
|
$1.08
|
|
|
$0.721
|
|
|
$0.568
|
|
|
$0.444
|
|
|
Ver
|
|
|
$0.519
|
|
|
$0.418
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 700 mOhm typ., 7.5 A MDmesh Power MOSFET in a
- STD5NM50AG
- STMicroelectronics
-
1:
$2.44
-
5,733En existencias
|
N.º de artículo de Mouser
511-STD5NM50AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 700 mOhm typ., 7.5 A MDmesh Power MOSFET in a
|
|
5,733En existencias
|
|
|
$2.44
|
|
|
$1.62
|
|
|
$1.11
|
|
|
$0.886
|
|
|
$0.74
|
|
|
Ver
|
|
|
$0.832
|
|
|
$0.717
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
- STD7LN80K5
- STMicroelectronics
-
1:
$2.69
-
2,672En existencias
|
N.º de artículo de Mouser
511-STD7LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
|
|
2,672En existencias
|
|
|
$2.69
|
|
|
$1.73
|
|
|
$1.20
|
|
|
$0.965
|
|
|
$0.803
|
|
|
Ver
|
|
|
$0.891
|
|
|
$0.788
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 6.3 A DPAK
- STD7N52K3
- STMicroelectronics
-
1:
$2.09
-
4,865En existencias
|
N.º de artículo de Mouser
511-STD7N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 6.3 A DPAK
|
|
4,865En existencias
|
|
|
$2.09
|
|
|
$1.33
|
|
|
$0.927
|
|
|
$0.785
|
|
|
$0.575
|
|
|
Ver
|
|
|
$0.656
|
|
|
$0.546
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 40V 5.4mOhm 80A
- STD95N4F3
- STMicroelectronics
-
1:
$2.25
-
3,123En existencias
|
N.º de artículo de Mouser
511-STD95N4F3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 40V 5.4mOhm 80A
|
|
3,123En existencias
|
|
|
$2.25
|
|
|
$1.45
|
|
|
$0.981
|
|
|
$0.783
|
|
|
$0.667
|
|
|
Ver
|
|
|
$0.738
|
|
|
$0.618
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 48 Amp
- STE48NM50
- STMicroelectronics
-
1:
$28.53
-
163En existencias
|
N.º de artículo de Mouser
511-STE48NM50
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 48 Amp
|
|
163En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ISOTOP-4
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 0.275 Ohm 17.5A MDmesh K5
- STF20N95K5
- STMicroelectronics
-
1:
$5.74
-
1,658En existencias
-
1,000Se espera el 27/7/2026
|
N.º de artículo de Mouser
511-STF20N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 0.275 Ohm 17.5A MDmesh K5
|
|
1,658En existencias
1,000Se espera el 27/7/2026
|
|
|
$5.74
|
|
|
$3.47
|
|
|
$3.18
|
|
|
$2.83
|
|
|
Ver
|
|
|
$2.71
|
|
|
$2.61
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 20 A Mdmesh
- STF26NM60N
- STMicroelectronics
-
1:
$7.55
-
2,032En existencias
|
N.º de artículo de Mouser
511-STF26NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 20 A Mdmesh
|
|
2,032En existencias
|
|
|
$7.55
|
|
|
$4.21
|
|
|
$3.87
|
|
|
$3.48
|
|
|
Ver
|
|
|
$3.36
|
|
|
$3.28
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 24V 120A Zener SuperMESH
- STF3NK100Z
- STMicroelectronics
-
1:
$4.66
-
1,813En existencias
|
N.º de artículo de Mouser
511-STF3NK100Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 24V 120A Zener SuperMESH
|
|
1,813En existencias
|
|
|
$4.66
|
|
|
$2.51
|
|
|
$2.28
|
|
|
$1.89
|
|
|
Ver
|
|
|
$1.81
|
|
|
$1.72
|
|
|
$1.70
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET
- STF40N60M2
- STMicroelectronics
-
1:
$6.09
-
1,534En existencias
|
N.º de artículo de Mouser
511-STF40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET
|
|
1,534En existencias
|
|
|
$6.09
|
|
|
$4.17
|
|
|
$3.37
|
|
|
$3.00
|
|
|
Ver
|
|
|
$2.56
|
|
|
$2.32
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
IGBTs Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
- STGD10HF60KD
- STMicroelectronics
-
1:
$2.33
-
5,297En existencias
|
N.º de artículo de Mouser
511-STGD10HF60KD
|
STMicroelectronics
|
IGBTs Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
|
|
5,297En existencias
|
|
|
$2.33
|
|
|
$1.50
|
|
|
$1.02
|
|
|
$0.813
|
|
|
$0.676
|
|
|
Ver
|
|
|
$0.791
|
|
|
$0.671
|
|
|
$0.646
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
IGBTs N-Ch 600 Volt 3 Amp
- STGD3NB60SDT4
- STMicroelectronics
-
1:
$1.40
-
7,090En existencias
|
N.º de artículo de Mouser
511-STGD3NB60SD
|
STMicroelectronics
|
IGBTs N-Ch 600 Volt 3 Amp
|
|
7,090En existencias
|
|
|
$1.40
|
|
|
$0.88
|
|
|
$0.584
|
|
|
$0.458
|
|
|
$0.372
|
|
|
Ver
|
|
|
$0.417
|
|
|
$0.344
|
|
|
$0.32
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
|
|
|
IGBTs 19 A - 600 V very fast IGBT
- STGP19NC60HD
- STMicroelectronics
-
1:
$2.10
-
2,328En existencias
|
N.º de artículo de Mouser
511-STGP19NC60HD
|
STMicroelectronics
|
IGBTs 19 A - 600 V very fast IGBT
|
|
2,328En existencias
|
|
|
$2.10
|
|
|
$1.31
|
|
|
$1.23
|
|
|
$1.19
|
|
|
Ver
|
|
|
$1.18
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
IGBTs 4.5 A, 600 V very fast IGBT with Ultrafast diode
- STGP3HF60HD
- STMicroelectronics
-
1:
$1.28
-
5,717En existencias
|
N.º de artículo de Mouser
511-STGP3HF60HD
|
STMicroelectronics
|
IGBTs 4.5 A, 600 V very fast IGBT with Ultrafast diode
|
|
5,717En existencias
|
|
|
$1.28
|
|
|
$0.604
|
|
|
$0.531
|
|
|
$0.418
|
|
|
Ver
|
|
|
$0.379
|
|
|
$0.288
|
|
|
$0.283
|
|
|
$0.28
|
|
|
$0.279
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
- STGP8M120DF3
- STMicroelectronics
-
1:
$5.29
-
1,678En existencias
|
N.º de artículo de Mouser
511-STGP8M120DF3
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
|
|
1,678En existencias
|
|
|
$5.29
|
|
|
$3.52
|
|
|
$2.85
|
|
|
$2.53
|
|
|
Ver
|
|
|
$2.02
|
|
|
$1.95
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
IGBTs 19 A - 600 V Very fast IGBT
- STGW19NC60HD
- STMicroelectronics
-
1:
$3.97
-
3,236En existencias
|
N.º de artículo de Mouser
511-STGW19NC60HD
|
STMicroelectronics
|
IGBTs 19 A - 600 V Very fast IGBT
|
|
3,236En existencias
|
|
|
$3.97
|
|
|
$1.90
|
|
|
$1.50
|
|
|
$1.39
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
- STGWA80H65FB
- STMicroelectronics
-
1:
$6.12
-
531En existencias
|
N.º de artículo de Mouser
511-STGWA80H65FB
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
|
|
531En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
- STH200N10WF7-2
- STMicroelectronics
-
1:
$4.92
-
649En existencias
|
N.º de artículo de Mouser
511-STH200N10WF7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
|
|
649En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 0.0062 Ohm 19A STripFET VII DG
- STL100N10F7
- STMicroelectronics
-
1:
$3.03
-
3,078En existencias
|
N.º de artículo de Mouser
511-STL100N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 0.0062 Ohm 19A STripFET VII DG
|
|
3,078En existencias
|
|
|
$3.03
|
|
|
$1.97
|
|
|
$1.36
|
|
|
$1.14
|
|
|
Ver
|
|
|
$0.928
|
|
|
$1.04
|
|
|
$0.928
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
- STL260N4LF7
- STMicroelectronics
-
1:
$3.16
-
2,681En existencias
|
N.º de artículo de Mouser
511-STL260N4LF7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
|
|
2,681En existencias
|
|
|
$3.16
|
|
|
$2.06
|
|
|
$1.43
|
|
|
$1.21
|
|
|
$1.11
|
|
|
$0.982
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT5x6-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
- STP10NK60Z
- STMicroelectronics
-
1:
$4.30
-
3,126En existencias
|
N.º de artículo de Mouser
511-STP10NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
|
|
3,126En existencias
|
|
|
$4.30
|
|
|
$2.23
|
|
|
$2.02
|
|
|
$1.81
|
|
|
Ver
|
|
|
$1.60
|
|
|
$1.51
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|