|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XLT1G
- onsemi
-
1:
$4.62
-
1,163En existencias
-
1,500Se espera el 28/8/2026
|
N.º de artículo de Mouser
863-NTMFS0D5N04XLT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL HEFET GEN 2 PACKAGE
|
|
1,163En existencias
1,500Se espera el 28/8/2026
|
|
|
$4.62
|
|
|
$3.05
|
|
|
$2.16
|
|
|
$1.85
|
|
|
$1.72
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFNW-5
|
N-Channel
|
1 Channel
|
40 V
|
455 A
|
490 uOhms
|
- 20 V, 20 V
|
2.2 V
|
127 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XMT1G
- onsemi
-
1:
$3.57
-
3,000En existencias
|
N.º de artículo de Mouser
863-NTMFS0D5N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
3,000En existencias
|
|
|
$3.57
|
|
|
$2.33
|
|
|
$1.62
|
|
|
$1.32
|
|
|
$1.21
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
414 A
|
520 uOhms
|
- 20 V, 20 V
|
3.5 V
|
97.5 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL PACKAGE
- NTMFS0D9N04XLT1G
- onsemi
-
1:
$3.55
-
1,197En existencias
-
1,500Se espera el 17/7/2026
|
N.º de artículo de Mouser
863-NTMFS0D9N04XLT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL PACKAGE
|
|
1,197En existencias
1,500Se espera el 17/7/2026
|
|
|
$3.55
|
|
|
$2.32
|
|
|
$1.61
|
|
|
$1.31
|
|
|
$1.20
|
|
|
$1.20
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
278 A
|
900 uOhms
|
- 20 V, 20 V
|
2.2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS0D9N04XMT1G
- onsemi
-
1:
$2.86
-
2,852En existencias
|
N.º de artículo de Mouser
863-NTMFS0D9N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
2,852En existencias
|
|
|
$2.86
|
|
|
$1.83
|
|
|
$1.24
|
|
|
$1.03
|
|
|
$0.931
|
|
|
Ver
|
|
|
$0.964
|
|
|
$0.90
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
273 A
|
900 uOhms
|
- 20 V, 20 V
|
3.5 V
|
61 nC
|
- 55 C
|
+ 175 C
|
121 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D1N04XMT1G
- onsemi
-
1:
$2.42
-
2,494En existencias
|
N.º de artículo de Mouser
863-NTMFS1D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
2,494En existencias
|
|
|
$2.42
|
|
|
$1.55
|
|
|
$1.06
|
|
|
$0.846
|
|
|
$0.715
|
|
|
$0.715
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
233 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.5 V
|
49.1 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
- NTMFS2D1N08XT1G
- onsemi
-
1:
$3.42
-
4,080En existencias
-
13,500En pedido
|
N.º de artículo de Mouser
863-NTMFS2D1N08XT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
|
|
4,080En existencias
13,500En pedido
Existencias:
4,080 Se puede enviar inmediatamente
En pedido:
7,500 Se espera el 1/6/2026
6,000 Se espera el 14/8/2026
Plazo de entrega de fábrica:
27 Semanas
|
|
|
$3.42
|
|
|
$2.23
|
|
|
$1.54
|
|
|
$1.30
|
|
|
$1.12
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
Máx.: 2,040
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
80 V
|
201 A
|
1.9 mOhms
|
- 20 V, 20 V
|
3.6 V
|
39 nC
|
- 55 C
|
+ 175 C
|
164 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS2D3N04XMT1G
- onsemi
-
1:
$1.58
-
5,932En existencias
|
N.º de artículo de Mouser
863-NTMFS2D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
5,932En existencias
|
|
|
$1.58
|
|
|
$1.01
|
|
|
$0.668
|
|
|
$0.526
|
|
|
$0.488
|
|
|
$0.466
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
111 A
|
2.35 mOhms
|
- 20 V, 20 V
|
3.5 V
|
22.1 nC
|
- 55 C
|
+ 175 C
|
53 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D4N04XMT1G
- onsemi
-
1:
$4.06
-
102En existencias
-
6,000En pedido
|
N.º de artículo de Mouser
863-NTMFS0D4N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
102En existencias
6,000En pedido
|
|
|
$4.06
|
|
|
$2.65
|
|
|
$1.95
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
Máx.: 390
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
509 A
|
420 uOhms
|
- 20 V, 20 V
|
3.5 V
|
133 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL PACKAGE
- NTMFS0D7N04XLT1G
- onsemi
-
1:
$3.12
-
1,111En existencias
|
N.º de artículo de Mouser
863-NTMFS0D7N04XLT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10S IN S08FL PACKAGE
|
|
1,111En existencias
|
|
|
$3.12
|
|
|
$2.03
|
|
|
$1.40
|
|
|
$1.17
|
|
|
$1.08
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
349 A
|
700 uOhms
|
- 20 V, 20 V
|
2.2 V
|
96 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D3N04XMT1G
- onsemi
-
1:
$2.14
-
495En existencias
|
N.º de artículo de Mouser
863-NTMFS1D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
495En existencias
|
|
|
$2.14
|
|
|
$1.37
|
|
|
$0.923
|
|
|
$0.733
|
|
|
$0.60
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
195 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.5 V
|
38.5 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
- NTMFS2D5N08XT1G
- onsemi
-
1:
$3.10
-
147En existencias
-
16,500En pedido
|
N.º de artículo de Mouser
863-NTMFS2D5N08XT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
|
|
147En existencias
16,500En pedido
Existencias:
147 Se puede enviar inmediatamente
En pedido:
9,000 Se espera el 26/5/2027
4,500 Se espera el 2/6/2027
3,000 Se espera el 30/6/2027
Plazo de entrega de fábrica:
27 Semanas
|
|
|
$3.10
|
|
|
$2.00
|
|
|
$1.39
|
|
|
$1.16
|
|
|
$0.976
|
|
|
$0.976
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
80 V
|
181 A
|
2.1 mOhms
|
- 20 V, 20 V
|
3.6 V
|
53 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS3D1N04XMT1G
- onsemi
-
1:
$1.53
-
667En existencias
-
1,500Se espera el 3/7/2026
|
N.º de artículo de Mouser
863-NTMFS3D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
667En existencias
1,500Se espera el 3/7/2026
|
|
|
$1.53
|
|
|
$0.962
|
|
|
$0.639
|
|
|
$0.50
|
|
|
$0.404
|
|
|
$0.376
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
83 A
|
3.1 mOhms
|
- 20 V, 20 V
|
3.5 V
|
15.6 nC
|
- 55 C
|
+ 175 C
|
39 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D6N04XMT1G
- onsemi
-
1:
$3.36
-
86En existencias
-
4,500En pedido
|
N.º de artículo de Mouser
863-NTMFS0D6N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
86En existencias
4,500En pedido
|
|
|
$3.36
|
|
|
$2.19
|
|
|
$1.51
|
|
|
$1.25
|
|
|
$1.10
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
380 A
|
570 uOhms
|
- 20 V, 20 V
|
3.5 V
|
86.4 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
- NTMFS3D5N08XT1G
- onsemi
-
1:
$2.40
-
40En existencias
-
3,000Se espera el 31/3/2027
|
N.º de artículo de Mouser
863-NTMFS3D5N08XT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 80V STD NCH MOSFET SO8FL
|
|
40En existencias
3,000Se espera el 31/3/2027
|
|
|
$2.40
|
|
|
$1.56
|
|
|
$1.02
|
|
|
$0.818
|
|
|
$0.678
|
|
|
$0.678
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
80 V
|
135 A
|
3 mOhms
|
- 20 V, 20 V
|
3.6 V
|
23 nC
|
- 55 C
|
+ 175 C
|
119 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|