|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
- IRFB7545PBF
- Infineon Technologies
-
1:
$1.42
-
58,727En existencias
|
N.º de artículo de Mouser
942-IRFB7545PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
|
|
58,727En existencias
|
|
|
$1.42
|
|
|
$0.509
|
|
|
$0.465
|
|
|
$0.404
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
95 A
|
4.9 mOhms
|
- 20 V, 20 V
|
3.7 V
|
75 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
StrongIRFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5CGSCATMA1
- Infineon Technologies
-
1:
$3.89
-
4,782En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,782En existencias
|
|
|
$3.89
|
|
|
$2.53
|
|
|
$1.88
|
|
|
$1.54
|
|
|
Ver
|
|
|
$1.41
|
|
|
$1.51
|
|
|
$1.41
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
60 V
|
21 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
49 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LSATMA1
- Infineon Technologies
-
1:
$2.89
-
65,605En existencias
|
N.º de artículo de Mouser
726-BSC010N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
65,605En existencias
|
|
|
$2.89
|
|
|
$1.78
|
|
|
$1.29
|
|
|
$1.08
|
|
|
Ver
|
|
|
$0.953
|
|
|
$1.03
|
|
|
$0.986
|
|
|
$0.953
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
133 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package
- ISC015N06NM5ATMA1
- Infineon Technologies
-
1:
$3.10
-
3,500En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC015N06NM5ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package
|
|
3,500En existencias
|
|
|
$3.10
|
|
|
$1.98
|
|
|
$1.35
|
|
|
$1.12
|
|
|
Ver
|
|
|
$0.977
|
|
|
$1.04
|
|
|
$1.01
|
|
|
$0.977
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
259 A
|
1.5 mOhms
|
20 V
|
3.3 V
|
70 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5CGATMA1
- Infineon Technologies
-
1:
$3.58
-
4,073En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,073En existencias
|
|
|
$3.58
|
|
|
$2.30
|
|
|
$1.67
|
|
|
$1.37
|
|
|
Ver
|
|
|
$1.24
|
|
|
$1.33
|
|
|
$1.24
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
137 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
39 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH61N06NM5ATMA1
- Infineon Technologies
-
1:
$7.69
-
2,955En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQFH61N06NM5ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
2,955En existencias
|
|
|
$7.69
|
|
|
$5.20
|
|
|
$3.79
|
|
|
$3.64
|
|
|
$3.51
|
|
|
$3.40
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
510 A
|
1 mOhms
|
- 20 V, 20 V
|
2.8 V
|
190 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISG0614N06NM5HATMA1
- Infineon Technologies
-
1:
$5.20
-
3,499En existencias
|
N.º de artículo de Mouser
726-ISG0614N06NM5HAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
3,499En existencias
|
|
|
$5.20
|
|
|
$3.46
|
|
|
$2.46
|
|
|
$2.19
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TFN-10
|
N-Channel
|
2 Channel
|
60 V
|
233 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.3 V
|
68 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
- IAUC120N06S5L022ATMA1
- Infineon Technologies
-
1:
$2.61
-
7,219En existencias
|
N.º de artículo de Mouser
726-IAUC120N06S5L022
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
|
|
7,219En existencias
|
|
|
$2.61
|
|
|
$1.68
|
|
|
$1.15
|
|
|
$0.919
|
|
|
Ver
|
|
|
$0.789
|
|
|
$0.845
|
|
|
$0.832
|
|
|
$0.789
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
170 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.7 V
|
77 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
- IAUC120N06S5N032ATMA1
- Infineon Technologies
-
1:
$2.02
-
3,655En existencias
|
N.º de artículo de Mouser
726-IAUC120N06S5N032
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
|
|
3,655En existencias
|
|
|
$2.02
|
|
|
$1.29
|
|
|
$0.869
|
|
|
$0.69
|
|
|
$0.613
|
|
|
$0.583
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
3.23 mOhms
|
- 20 V, 20 V
|
2.8 V
|
47 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT009N06NM5ATMA1
- Infineon Technologies
-
1:
$6.56
-
1,439En existencias
|
N.º de artículo de Mouser
726-IPT009N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,439En existencias
|
|
|
$6.56
|
|
|
$4.41
|
|
|
$3.18
|
|
|
$3.12
|
|
|
$3.01
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
60 V
|
427 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.8 V
|
171 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPTC012N06NM5ATMA1
- Infineon Technologies
-
1:
$6.20
-
817En existencias
|
N.º de artículo de Mouser
726-IPTC012N06NM5ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
817En existencias
|
|
|
$6.20
|
|
|
$4.15
|
|
|
$2.98
|
|
|
$2.73
|
|
|
$2.55
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
60 V
|
311 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.1 V
|
106 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQDH88N06LM5CGATMA1
- Infineon Technologies
-
1:
$3.95
-
4,705En existencias
|
N.º de artículo de Mouser
726-IQDH88N06LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,705En existencias
|
|
|
$3.95
|
|
|
$2.75
|
|
|
$2.39
|
|
|
$2.34
|
|
|
Ver
|
|
|
$2.25
|
|
|
$2.32
|
|
|
$2.25
|
|
|
$2.25
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
60 V
|
447 A
|
860 uOhms
|
- 10 V, 10 V
|
1.1 V
|
76 nC
|
- 55 C
|
+ 175 C
|
333 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5CGATMA1
- Infineon Technologies
-
1:
$3.37
-
4,456En existencias
|
N.º de artículo de Mouser
726-IQE022N06LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,456En existencias
|
|
|
$3.37
|
|
|
$2.08
|
|
|
$1.51
|
|
|
$1.25
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.22
|
|
|
$1.17
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2.3 V
|
53 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5SCATMA1
- Infineon Technologies
-
1:
$3.65
-
5,492En existencias
|
N.º de artículo de Mouser
726-IQE022N06LM5SCAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
5,492En existencias
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.67
|
|
|
$1.43
|
|
|
Ver
|
|
|
$1.32
|
|
|
$1.40
|
|
|
$1.39
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5SCATMA1
- Infineon Technologies
-
1:
$3.94
-
1,673En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5SCAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,673En existencias
|
|
|
$3.94
|
|
|
$2.57
|
|
|
$1.83
|
|
|
$1.63
|
|
|
Ver
|
|
|
$1.41
|
|
|
$1.54
|
|
|
$1.51
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
21 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
49 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISG0614N06NM5HSCATMA1
- Infineon Technologies
-
1:
$5.27
-
1,460En existencias
|
N.º de artículo de Mouser
726-ISG0614N06NM5HSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,460En existencias
|
|
|
$5.27
|
|
|
$3.51
|
|
|
$2.51
|
|
|
$2.41
|
|
|
$2.37
|
|
|
$2.25
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TFN-10
|
N-Channel
|
2 Channel
|
60 V
|
233 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.3 V
|
68 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT008N06NM5LFATMA1
- Infineon Technologies
-
1:
$7.73
-
4,024En existencias
|
N.º de artículo de Mouser
726-IPT008N06NM5LFAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,024En existencias
|
|
|
$7.73
|
|
|
$5.27
|
|
|
$3.98
|
|
|
$3.88
|
|
|
$3.80
|
|
|
$3.62
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
454 A
|
800 uOhms
|
- 20 V, 20 V
|
3.6 V
|
185 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH86N06NM5ATMA1
- Infineon Technologies
-
1:
$6.45
-
290En existencias
|
N.º de artículo de Mouser
726-IQFH86N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
290En existencias
|
|
|
$6.45
|
|
|
$4.33
|
|
|
$3.12
|
|
|
$2.89
|
|
|
$2.69
|
|
|
$2.69
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
394 A
|
1.47 mOhms
|
- 20 V, 20 V
|
2.8 V
|
137 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH99N06NM5ATMA1
- Infineon Technologies
-
1:
$5.81
-
300En existencias
|
N.º de artículo de Mouser
726-IQFH99N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
300En existencias
|
|
|
$5.81
|
|
|
$3.88
|
|
|
$2.78
|
|
|
$2.51
|
|
|
$2.44
|
|
|
$2.34
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
339 A
|
1.72 mOhms
|
- 20 V, 20 V
|
2.8 V
|
115 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IST011N06NM5AUMA1
- Infineon Technologies
-
1:
$5.54
-
2,869En existencias
|
N.º de artículo de Mouser
726-IST011N06NM5AUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
2,869En existencias
|
|
|
$5.54
|
|
|
$3.69
|
|
|
$2.64
|
|
|
$2.35
|
|
|
$2.27
|
|
|
$2.20
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
399 A
|
1.1 Ohms
|
- 20 V, 20 V
|
3.3 V
|
110 nC
|
- 55 C
|
+ 175 C
|
313 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5CGSCATMA1
- Infineon Technologies
-
1:
$4.58
-
87En existencias
-
6,000Se espera el 3/12/2026
|
N.º de artículo de Mouser
726-IQE022N06LM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
87En existencias
6,000Se espera el 3/12/2026
|
|
|
$4.58
|
|
|
$3.00
|
|
|
$2.19
|
|
|
$1.84
|
|
|
Ver
|
|
|
$1.65
|
|
|
$1.77
|
|
|
$1.70
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUZ40N06S5L050ATMA1
- Infineon Technologies
-
1:
$1.91
-
16,183En existencias
|
N.º de artículo de Mouser
726-IAUZ40N06S5L050A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
16,183En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.81
|
|
|
$0.642
|
|
|
Ver
|
|
|
$0.484
|
|
|
$0.54
|
|
|
$0.53
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8-33
|
N-Channel
|
1 Channel
|
60 V
|
40 A
|
5 mOhms
|
- 16 V, 16 V
|
2.2 V
|
28 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISC010N06NM5ATMA1
- Infineon Technologies
-
1:
$5.21
-
3,063En existencias
|
N.º de artículo de Mouser
726-ISC010N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
3,063En existencias
|
|
|
$5.21
|
|
|
$3.46
|
|
|
$2.46
|
|
|
$2.34
|
|
|
$2.21
|
|
|
$2.02
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
330 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.3 V
|
115 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS Power-Transistor,60V
Infineon Technologies IPP029N06NXKSA1
- IPP029N06NXKSA1
- Infineon Technologies
-
1:
$3.55
-
336En existencias
-
500Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-IPP029N06NXKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS Power-Transistor,60V
|
|
336En existencias
500Se espera el 11/6/2026
|
|
|
$3.55
|
|
|
$1.80
|
|
|
$1.63
|
|
|
$1.31
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
84 A
|
2.9 mOhms
|
- 20 V, 20 V
|
3.3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC022N04LS6ATMA1
- Infineon Technologies
-
1:
$2.12
-
245En existencias
-
140,000Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-BSC022N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
245En existencias
140,000Se espera el 2/7/2026
|
|
|
$2.12
|
|
|
$1.35
|
|
|
$0.908
|
|
|
$0.754
|
|
|
Ver
|
|
|
$0.585
|
|
|
$0.692
|
|
|
$0.674
|
|
|
$0.585
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.3 V
|
28 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|