|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD70P04P4L08ATMA2
- Infineon Technologies
-
1:
$2.04
-
16,191En existencias
|
N.º de artículo de Mouser
726-IPD70P04P4L08ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
16,191En existencias
|
|
|
$2.04
|
|
|
$1.23
|
|
|
$0.853
|
|
|
$0.694
|
|
|
$0.571
|
|
|
Ver
|
|
|
$0.635
|
|
|
$0.562
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
70 A
|
9.5 mOhms
|
- 16 V, 5 V
|
1.7 V
|
71 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD50P03P4L11ATMA2
- Infineon Technologies
-
1:
$1.70
-
3,860En existencias
|
N.º de artículo de Mouser
726-IPD50P03P4L11ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
3,860En existencias
|
|
|
$1.70
|
|
|
$0.964
|
|
|
$0.689
|
|
|
$0.564
|
|
|
$0.462
|
|
|
Ver
|
|
|
$0.51
|
|
|
$0.438
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
TO-252-3-11
|
P-Channel
|
1 Channel
|
30 V
|
50 A
|
13 mOhms
|
- 16 V, 5 V
|
1.5 V
|
42 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPB120P04P404ATMA2
- Infineon Technologies
-
1:
$3.87
-
4,947En existencias
|
N.º de artículo de Mouser
726-IPB120P04P404ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
4,947En existencias
|
|
|
$3.87
|
|
|
$2.52
|
|
|
$1.80
|
|
|
$1.48
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-3
|
P-Channel
|
1 Channel
|
40 V
|
120 A
|
2.9 mOhms
|
- 16 V, 5 V
|
3 V
|
158 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPB120P04P4L03ATMA2
- Infineon Technologies
-
1:
$3.92
-
1,218En existencias
-
2,000Se espera el 3/9/2026
|
N.º de artículo de Mouser
726-IPB120P04P4L03A2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,218En existencias
2,000Se espera el 3/9/2026
|
|
|
$3.92
|
|
|
$2.57
|
|
|
$1.80
|
|
|
$1.48
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-3-2
|
P-Channel
|
1 Channel
|
40 V
|
120 A
|
4 mOhms
|
- 16 V, 5 V
|
3 V
|
180 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPB180P04P403ATMA2
- Infineon Technologies
-
1:
$4.36
-
2,078En existencias
-
2,000Se espera el 18/5/2026
|
N.º de artículo de Mouser
726-IPB180P04P403ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
2,078En existencias
2,000Se espera el 18/5/2026
|
|
|
$4.36
|
|
|
$2.87
|
|
|
$2.02
|
|
|
$1.71
|
|
|
$1.70
|
|
|
$1.59
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
P-Channel
|
1 Channel
|
40 V
|
180 A
|
2 mOhms
|
- 20 V, 20 V
|
3 V
|
190 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPB180P04P4L02ATMA2
- Infineon Technologies
-
1:
$4.47
-
1,851En existencias
|
N.º de artículo de Mouser
726-IPB180P04P4L02A2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,851En existencias
|
|
|
$4.47
|
|
|
$2.81
|
|
|
$1.98
|
|
|
$1.74
|
|
|
$1.62
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
P-Channel
|
1 Channel
|
40 V
|
180 A
|
2.6 mOhms
|
- 16 V, 5 V
|
1.7 V
|
220 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD50P04P413ATMA2
- Infineon Technologies
-
1:
$1.74
-
4,639En existencias
|
N.º de artículo de Mouser
726-IPD50P04P413ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
4,639En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.736
|
|
|
$0.579
|
|
|
$0.472
|
|
|
Ver
|
|
|
$0.529
|
|
|
$0.451
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
TO-252-3-11
|
P-Channel
|
1 Channel
|
40 V
|
50 A
|
9.2 mOhms
|
- 20 V, 20 V
|
3 V
|
39 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD50P04P4L11ATMA2
- Infineon Technologies
-
1:
$1.81
-
11,151En existencias
-
12,500Se espera el 28/1/2027
|
N.º de artículo de Mouser
726-IPD50P04P4L11AT2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
11,151En existencias
12,500Se espera el 28/1/2027
|
|
|
$1.81
|
|
|
$1.15
|
|
|
$0.769
|
|
|
$0.606
|
|
|
$0.497
|
|
|
Ver
|
|
|
$0.554
|
|
|
$0.477
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
TC252-3-313
|
P-Channel
|
1 Channel
|
40 V
|
50 A
|
12.3 mOhms
|
- 16 V, 5 V
|
1.7 V
|
45 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD70P04P409ATMA2
- Infineon Technologies
-
1:
$2.00
-
3,326En existencias
|
N.º de artículo de Mouser
726-IPD70P04P409ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
3,326En existencias
|
|
|
$2.00
|
|
|
$1.28
|
|
|
$0.856
|
|
|
$0.678
|
|
|
$0.558
|
|
|
Ver
|
|
|
$0.621
|
|
|
$0.546
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
73 A
|
6.4 mOhms
|
- 20 V, 20 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD80P03P4L07ATMA2
- Infineon Technologies
-
1:
$1.98
-
14,243En existencias
|
N.º de artículo de Mouser
726-IPD80P03P4L07AT2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
14,243En existencias
|
|
|
$1.98
|
|
|
$1.22
|
|
|
$0.844
|
|
|
$0.697
|
|
|
$0.577
|
|
|
Ver
|
|
|
$0.625
|
|
|
$0.572
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
80 A
|
8.7 mOhms
|
- 16 V, 5 V
|
1.5 V
|
63 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD90P03P404ATMA2
- Infineon Technologies
-
1:
$2.72
-
3,301En existencias
|
N.º de artículo de Mouser
726-IPD90P03P404ATM2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
3,301En existencias
|
|
|
$2.72
|
|
|
$1.79
|
|
|
$1.25
|
|
|
$1.05
|
|
|
$0.985
|
|
|
$0.919
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
90 A
|
4.5 mOhms
|
- 20 V, 20 V
|
3 V
|
100 nC
|
- 55 C
|
+ 175 C
|
137 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD90P03P4L04ATMA2
- Infineon Technologies
-
1:
$2.92
-
6,552En existencias
|
N.º de artículo de Mouser
726-IPD90P03P4L04AT2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
6,552En existencias
|
|
|
$2.92
|
|
|
$1.89
|
|
|
$1.30
|
|
|
$1.05
|
|
|
$0.984
|
|
|
$0.919
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
90 A
|
4.1 mOhms
|
- 16 V, 5 V
|
1.5 V
|
125 nC
|
- 55 C
|
+ 175 C
|
137 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD90P04P405ATMA2
- Infineon Technologies
-
1:
$2.69
-
2,530En existencias
-
5,000Se espera el 1/7/2026
|
N.º de artículo de Mouser
726-IPD90P04P405ATM2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
2,530En existencias
5,000Se espera el 1/7/2026
|
|
|
$2.69
|
|
|
$1.68
|
|
|
$1.22
|
|
|
$1.02
|
|
|
$0.936
|
|
|
$0.895
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
90 A
|
4.7 mOhms
|
- 20 V, 20 V
|
3 V
|
118 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPD90P04P4L04ATMA2
- Infineon Technologies
-
1:
$2.80
-
4,404En existencias
|
N.º de artículo de Mouser
726-IPD90P04P4L04AT2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
4,404En existencias
|
|
|
$2.80
|
|
|
$1.74
|
|
|
$1.26
|
|
|
$1.03
|
|
|
$0.964
|
|
|
$0.931
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
90 A
|
4.3 mOhms
|
- 16 V, 5 V
|
1.7 V
|
135 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
Infineon Technologies IPB80P04P405ATMA2
- IPB80P04P405ATMA2
- Infineon Technologies
-
1:
$3.39
-
1,749En existencias
|
N.º de artículo de Mouser
726-IPB80P04P405ATM2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,749En existencias
|
|
|
$3.39
|
|
|
$2.21
|
|
|
$1.53
|
|
|
$1.24
|
|
|
$1.14
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-3-2
|
P-Channel
|
1 Channel
|
40 V
|
80 A
|
4 mOhms
|
- 20 V, 20 V
|
3 V
|
116 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
Reel, Cut Tape
|
|