|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 160A D2PAK-6 OptiMOS-T2
- IPB160N04S4-H1
- Infineon Technologies
-
1:
$3.28
-
309En existencias
|
N.º de artículo de Mouser
726-IPB160N04S4-H1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 160A D2PAK-6 OptiMOS-T2
|
|
309En existencias
|
|
|
$3.28
|
|
|
$2.14
|
|
|
$1.64
|
|
|
$1.37
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
160 A
|
1.4 mOhms
|
- 20 V, 20 V
|
2 V
|
137 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 80A D2PAK-2 OptiMOS-T2
- IPB80N04S4-03
- Infineon Technologies
-
1:
$2.67
-
430En existencias
|
N.º de artículo de Mouser
726-IPB80N04S4-03
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 80A D2PAK-2 OptiMOS-T2
|
|
430En existencias
|
|
|
$2.67
|
|
|
$1.72
|
|
|
$1.18
|
|
|
$0.942
|
|
|
$0.867
|
|
|
$0.813
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
3.3 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 80A D2PAK-2 OptiMOS-T2
- IPB80N04S4L-04
- Infineon Technologies
-
1:
$2.48
-
826En existencias
|
N.º de artículo de Mouser
726-IPB80N04S4L-04
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 80A D2PAK-2 OptiMOS-T2
|
|
826En existencias
|
|
|
$2.48
|
|
|
$1.60
|
|
|
$1.09
|
|
|
$0.925
|
|
|
$0.796
|
|
|
$0.735
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
4.2 mOhms
|
- 20 V, 20 V
|
1.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IPB80N06S2L06ATMA2
- Infineon Technologies
-
1:
$4.00
-
766En existencias
|
N.º de artículo de Mouser
726-IPB80N06S2L06ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
766En existencias
|
|
|
$4.00
|
|
|
$2.86
|
|
|
$2.01
|
|
|
$1.64
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
8.1 mOhms
|
- 20 V, 20 V
|
1.6 V
|
150 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IPB80N06S2L07ATMA3
- Infineon Technologies
-
1:
$3.71
-
651En existencias
|
N.º de artículo de Mouser
726-IPB80N06S2L07ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
651En existencias
|
|
|
$3.71
|
|
|
$2.35
|
|
|
$1.80
|
|
|
$1.51
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
6.7 mOhms
|
- 20 V, 20 V
|
1.6 V
|
130 nC
|
- 55 C
|
+ 175 C
|
210 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 80A D2PAK-2
- IPB80N06S407ATMA2
- Infineon Technologies
-
1:
$2.50
-
446En existencias
|
N.º de artículo de Mouser
726-IPB80N06S407ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 80A D2PAK-2
|
|
446En existencias
|
|
|
$2.50
|
|
|
$1.61
|
|
|
$1.10
|
|
|
$0.873
|
|
|
$0.788
|
|
|
$0.742
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
7.1 mOhms
|
- 20 V, 20 V
|
3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 280mA SOT-323-3
- BSS138WH6433XTMA1
- Infineon Technologies
-
1:
$0.32
-
8,313En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-BSS138WH6433XTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 280mA SOT-323-3
|
|
8,313En existencias
10,000En pedido
|
|
|
$0.32
|
|
|
$0.195
|
|
|
$0.122
|
|
|
$0.09
|
|
|
$0.05
|
|
|
Ver
|
|
|
$0.071
|
|
|
$0.062
|
|
|
$0.045
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-323-3
|
N-Channel
|
1 Channel
|
60 V
|
280 mA
|
3.5 Ohms
|
- 20 V, 20 V
|
600 mV
|
1.5 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R280P7XKSA1
- Infineon Technologies
-
1:
$2.64
-
700En existencias
|
N.º de artículo de Mouser
726-IPA60R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
700En existencias
|
|
|
$2.64
|
|
|
$1.53
|
|
|
$1.17
|
|
|
$0.99
|
|
|
$0.788
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
- IPB042N10N3 G
- Infineon Technologies
-
1:
$2.72
-
635En existencias
-
1,000Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-IPB042N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
|
|
635En existencias
1,000Se espera el 11/6/2026
|
|
|
$2.72
|
|
|
$1.75
|
|
|
$1.25
|
|
|
$1.06
|
|
|
$0.907
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.2 mOhms
|
- 20 V, 20 V
|
2 V
|
88 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A TO220-3 OptiMOS 3
- IPP110N20N3 G
- Infineon Technologies
-
1:
$5.53
-
608En existencias
-
500Se espera el 7/9/2026
|
N.º de artículo de Mouser
726-IPP110N20N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A TO220-3 OptiMOS 3
|
|
608En existencias
500Se espera el 7/9/2026
|
|
|
$5.53
|
|
|
$3.61
|
|
|
$2.82
|
|
|
$2.36
|
|
|
Ver
|
|
|
$2.19
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
200 V
|
88 A
|
9.9 mOhms
|
- 20 V, 20 V
|
2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 230mA SOT-23-3
- BSS159N H6327
- Infineon Technologies
-
1:
$0.91
-
2,842En existencias
|
N.º de artículo de Mouser
726-BSS159NH6327
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 230mA SOT-23-3
|
|
2,842En existencias
|
|
|
$0.91
|
|
|
$0.63
|
|
|
$0.399
|
|
|
$0.247
|
|
|
$0.142
|
|
|
Ver
|
|
|
$0.183
|
|
|
$0.124
|
|
|
$0.111
|
|
|
$0.102
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
60 V
|
230 mA
|
1.7 Ohms
|
- 20 V, 20 V
|
3.5 V
|
1.4 nC
|
- 55 C
|
+ 150 C
|
360 mW
|
Depletion
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 240V 100mA SOT-23-3
- BSS131H6327XT
- Infineon Technologies
-
1:
$0.43
-
1,060En existencias
|
N.º de artículo de Mouser
726-BSS131H6327XTSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 240V 100mA SOT-23-3
|
|
1,060En existencias
|
|
|
$0.43
|
|
|
$0.32
|
|
|
$0.181
|
|
|
$0.122
|
|
|
$0.093
|
|
|
$0.067
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
240 V
|
110 mA
|
7.7 Ohms
|
- 20 V, 20 V
|
1.4 V
|
2.1 nC
|
- 55 C
|
+ 150 C
|
360 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
Infineon Technologies IPB80P04P4L06ATMA2
- IPB80P04P4L06ATMA2
- Infineon Technologies
-
1:
$2.89
-
219En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB80P04P4L06AT2
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
219En existencias
|
|
|
$2.89
|
|
|
$1.87
|
|
|
$1.29
|
|
|
$1.04
|
|
|
$0.951
|
|
|
$0.907
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-3-2
|
P-Channel
|
1 Channel
|
40 V
|
80 A
|
8.2 mOhms
|
- 16 V, 5 V
|
1.7 V
|
80 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 280mA SOT-323-3
- BSS138WH6327XTSA1
- Infineon Technologies
-
1:
$0.30
-
471,916En pedido
|
N.º de artículo de Mouser
726-BSS138WH6327XTSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 280mA SOT-323-3
|
|
471,916En pedido
|
|
|
$0.30
|
|
|
$0.181
|
|
|
$0.113
|
|
|
$0.083
|
|
|
$0.074
|
|
|
$0.045
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-323-3
|
N-Channel
|
1 Channel
|
60 V
|
280 mA
|
2.1 Ohms
|
- 20 V, 20 V
|
1 V
|
1 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 64A D2PAK-2
- IPB64N25S3-20
- Infineon Technologies
-
1:
$7.27
-
3,000Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPB64N25S3-20
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 64A D2PAK-2
|
|
3,000Se espera el 2/7/2026
|
|
|
$7.27
|
|
|
$5.42
|
|
|
$4.39
|
|
|
$3.90
|
|
|
$3.45
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
250 V
|
64 A
|
17.5 mOhms
|
- 20 V, 20 V
|
2 V
|
89 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB70N10S3L-12
- Infineon Technologies
-
1:
$3.65
-
3,729En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPB70N10S3L-12
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
3,729En pedido
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.48
|
|
|
$1.47
|
|
|
Ver
|
|
|
$1.42
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
12 mOhms
|
- 20 V, 20 V
|
1.7 V
|
60 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R280CEXKSA2
- Infineon Technologies
-
1:
$1.81
-
4,000En pedido
|
N.º de artículo de Mouser
726-IPA50R280CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,000En pedido
En pedido:
1,500 Se espera el 11/6/2026
1,000 Se espera el 2/7/2026
1,500 Se espera el 9/7/2026
Plazo de entrega de fábrica:
17 Semanas
|
|
|
$1.81
|
|
|
$0.862
|
|
|
$0.769
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.509
|
|
|
$0.477
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3.5 V
|
32.6 nC
|
- 40 C
|
+ 150 C
|
30.4 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 25A D2PAK-2 OptiMOS 3
- IPB600N25N3 G
- Infineon Technologies
-
1:
$3.62
-
2,978En pedido
|
N.º de artículo de Mouser
726-IPB600N25N3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 25A D2PAK-2 OptiMOS 3
|
|
2,978En pedido
En pedido:
978 Se espera el 13/8/2026
Plazo de entrega de fábrica:
15 Semanas
|
|
|
$3.62
|
|
|
$2.36
|
|
|
$1.85
|
|
|
$1.56
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
250 V
|
25 A
|
51 mOhms
|
- 20 V, 20 V
|
2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 120A D2PAK-2 OptiMOS 3
- IPB029N06N3 G
- Infineon Technologies
-
1:
$2.99
-
1En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB029N06N3G
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 120A D2PAK-2 OptiMOS 3
|
|
1En existencias
|
|
|
$2.99
|
|
|
$1.93
|
|
|
$1.38
|
|
|
$1.16
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
165 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6 OptiMOS 3
- IPB017N06N3 G
- Infineon Technologies
-
1:
$3.87
-
550Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IPB017N06N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6 OptiMOS 3
|
|
550Se espera el 1/6/2026
|
|
|
$3.87
|
|
|
$2.53
|
|
|
$1.98
|
|
|
$1.72
|
|
|
$1.45
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
60 V
|
180 A
|
1.3 mOhms
|
- 20 V, 20 V
|
2 V
|
275 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB50N10S3L-16
- Infineon Technologies
-
1:
$3.43
-
485En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPB50N10S3L16
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
485En pedido
|
|
|
$3.43
|
|
|
$2.23
|
|
|
$1.55
|
|
|
$1.29
|
|
|
$1.13
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
50 A
|
15.4 mOhms
|
- 20 V, 20 V
|
2.4 V
|
64 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20V 2.5A SOT-23-3
- BSS205NH6327XT
- Infineon Technologies
-
1:
$0.43
-
Plazo de entrega no en existencias 12 Semanas
|
N.º de artículo de Mouser
726-BSS205NH6327XTSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20V 2.5A SOT-23-3
|
|
Plazo de entrega no en existencias 12 Semanas
|
|
|
$0.43
|
|
|
$0.316
|
|
|
$0.179
|
|
|
$0.121
|
|
|
$0.081
|
|
|
Ver
|
|
|
$0.092
|
|
|
$0.07
|
|
|
$0.065
|
|
|
$0.058
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
20 V
|
2.5 A
|
40 mOhms
|
- 12 V, 12 V
|
950 mV
|
2.1 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|