|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA65R1K0CEXKSA1
- Infineon Technologies
-
1:
$1.53
-
944En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA65R1K0CEXKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
944En existencias
|
|
|
$1.53
|
|
|
$0.726
|
|
|
$0.647
|
|
|
$0.507
|
|
|
Ver
|
|
|
$0.462
|
|
|
$0.444
|
|
|
$0.429
|
|
|
$0.416
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
7.2 A
|
2.22 Ohms
|
- 20 V, 20 V
|
3 V
|
15.3 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPU60R2K1CEAKMA1
- Infineon Technologies
-
1:
$0.82
-
2,675En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPU60R2K1CEAKMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,675En existencias
|
|
|
$0.82
|
|
|
$0.346
|
|
|
$0.307
|
|
|
$0.25
|
|
|
Ver
|
|
|
$0.225
|
|
|
$0.204
|
|
|
$0.202
|
|
|
$0.194
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
3.7 A
|
2.1 Ohms
|
- 20 V, 20 V
|
3 V
|
6.7 nC
|
- 40 C
|
+ 150 C
|
38 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 16A TO220FP-3 CoolMOS CP
- IPA60R199CP
- Infineon Technologies
-
1:
$4.46
-
221En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA60R199CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 16A TO220FP-3 CoolMOS CP
|
|
221En existencias
|
|
|
$4.46
|
|
|
$2.29
|
|
|
$2.08
|
|
|
$1.70
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
199 mOhms
|
- 20 V, 20 V
|
3.5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R1K0CEXKSA1
- Infineon Technologies
-
1:
$1.44
-
498En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA60R1K0CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
498En existencias
|
|
|
$1.44
|
|
|
$0.677
|
|
|
$0.602
|
|
|
$0.469
|
|
|
Ver
|
|
|
$0.391
|
|
|
$0.376
|
|
|
$0.349
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6.8 A
|
2.22 Ohms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220FP-3 CoolMOS CP
- IPA60R299CP
- Infineon Technologies
-
1:
$3.18
-
452En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA60R299CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220FP-3 CoolMOS CP
|
|
452En existencias
|
|
|
$3.18
|
|
|
$2.07
|
|
|
$1.59
|
|
|
$1.32
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
270 mOhms
|
- 20 V, 20 V
|
2.5 V
|
29 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R1K0CEATMA1
- Infineon Technologies
-
1:
$0.99
-
2,745En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPN60R1K0CEATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,745En existencias
|
|
|
$0.99
|
|
|
$0.615
|
|
|
$0.40
|
|
|
$0.307
|
|
|
$0.239
|
|
|
Ver
|
|
|
$0.277
|
|
|
$0.22
|
|
|
$0.205
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
6.8 A
|
2.34 Ohms
|
- 20 V, 20 V
|
2.5 V
|
13 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 21A TO220-3 CoolMOS CP
- IPP60R165CP
- Infineon Technologies
-
1:
$4.73
-
355En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPP60R165CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 21A TO220-3 CoolMOS CP
|
|
355En existencias
|
|
|
$4.73
|
|
|
$3.13
|
|
|
$2.45
|
|
|
$2.17
|
|
|
$1.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
150 mOhms
|
- 20 V, 20 V
|
2.5 V
|
52 nC
|
- 55 C
|
+ 150 C
|
192 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 16A TO220-3 CoolMOS CP
- IPP60R199CP
- Infineon Technologies
-
1:
$4.26
-
372En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPP60R199CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 16A TO220-3 CoolMOS CP
|
|
372En existencias
|
|
|
$4.26
|
|
|
$2.80
|
|
|
$2.14
|
|
|
$1.81
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
180 mOhms
|
- 20 V, 20 V
|
2.5 V
|
43 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 16A TO220-3 CoolMOS CP
- IPP60R199CPXKSA1
- Infineon Technologies
-
1:
$4.06
-
358En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPP60R199CPXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 16A TO220-3 CoolMOS CP
|
|
358En existencias
|
|
|
$4.06
|
|
|
$2.08
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
180 mOhms
|
- 20 V, 20 V
|
2.5 V
|
43 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPU60R1K5CEAKMA2
- Infineon Technologies
-
1:
$0.97
-
2,928En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPU60R1K5CEAKMA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,928En existencias
|
|
|
$0.97
|
|
|
$0.412
|
|
|
$0.365
|
|
|
$0.298
|
|
|
Ver
|
|
|
$0.277
|
|
|
$0.217
|
|
|
$0.202
|
|
|
$0.199
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
5 A
|
1.5 Ohms
|
- 20 V, 20 V
|
3 V
|
9.4 nC
|
- 40 C
|
+ 150 C
|
49 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 60A TO247-3 CoolMOS CP
- IPW60R045CP
- Infineon Technologies
-
1:
$15.99
-
350En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW60R045CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 60A TO247-3 CoolMOS CP
|
|
350En existencias
|
|
|
$15.99
|
|
|
$12.37
|
|
|
$10.70
|
|
|
$10.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
60 A
|
40 mOhms
|
- 20 V, 20 V
|
2.5 V
|
190 nC
|
- 55 C
|
+ 150 C
|
431 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 23A TO220FP-3 CoolMOS CP
- IPA50R140CP
- Infineon Technologies
-
1:
$5.04
-
587En existencias
|
N.º de artículo de Mouser
726-IPA50R140CP
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 23A TO220FP-3 CoolMOS CP
|
|
587En existencias
|
|
|
$5.04
|
|
|
$3.04
|
|
|
$2.57
|
|
|
$2.15
|
|
|
$1.87
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
500 V
|
23 A
|
130 mOhms
|
- 20 V, 20 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CE
- Infineon Technologies
-
1:
$1.22
-
339En existencias
|
N.º de artículo de Mouser
726-IPA50R800CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
339En existencias
|
|
|
$1.22
|
|
|
$0.763
|
|
|
$0.503
|
|
|
$0.398
|
|
|
Ver
|
|
|
$0.353
|
|
|
$0.323
|
|
|
$0.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CEXKSA2
- Infineon Technologies
-
1:
$1.30
-
1,550En existencias
|
N.º de artículo de Mouser
726-IPA50R800CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,550En existencias
|
|
|
$1.30
|
|
|
$0.604
|
|
|
$0.536
|
|
|
$0.466
|
|
|
Ver
|
|
|
$0.398
|
|
|
$0.345
|
|
|
$0.31
|
|
|
$0.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN50R1K4CEATMA1
- Infineon Technologies
-
1:
$0.77
-
5,040En existencias
|
N.º de artículo de Mouser
726-IPN50R1K4CEATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
5,040En existencias
|
|
|
$0.77
|
|
|
$0.511
|
|
|
$0.33
|
|
|
$0.248
|
|
|
$0.194
|
|
|
Ver
|
|
|
$0.217
|
|
|
$0.177
|
|
|
$0.155
|
|
|
$0.149
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
500 V
|
3.1 A
|
3.28 Ohms
|
- 20 V, 20 V
|
2.5 V
|
8.2 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 13A TO220-3
- IPP50R250CPXKSA1
- Infineon Technologies
-
1:
$2.94
-
147En existencias
|
N.º de artículo de Mouser
726-IPP50R250CPXKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 13A TO220-3
|
|
147En existencias
|
|
|
$2.94
|
|
|
$1.45
|
|
|
$1.30
|
|
|
$1.05
|
|
|
$0.928
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
13 A
|
250 mOhms
|
- 20 V, 20 V
|
3.5 V
|
27 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 13A TO220-3 CoolMOS CE
- IPP50R280CE
- Infineon Technologies
-
1:
$1.81
-
842En existencias
|
N.º de artículo de Mouser
726-IPP50R280CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 13A TO220-3 CoolMOS CE
|
|
842En existencias
|
|
|
$1.81
|
|
|
$0.862
|
|
|
$0.769
|
|
|
$0.633
|
|
|
Ver
|
|
|
$0.509
|
|
|
$0.494
|
|
|
$0.477
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
13 A
|
280 mOhms
|
- 20 V, 20 V
|
2.5 V
|
32.6 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R500CEXKSA2
- Infineon Technologies
-
1:
$1.47
-
942En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA50R500CEXKSA2
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
942En existencias
|
|
|
$1.47
|
|
|
$0.692
|
|
|
$0.616
|
|
|
$0.482
|
|
|
Ver
|
|
|
$0.463
|
|
|
$0.443
|
|
|
$0.427
|
|
|
$0.418
|
|
|
$0.412
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
11.1 A
|
1.17 Ohms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 21A TO220FP-3 CoolMOS CP
- IPA60R165CP
- Infineon Technologies
-
1:
$5.43
-
2En existencias
-
500Se espera el 26/5/2026
-
NRND
|
N.º de artículo de Mouser
726-IPA60R165CP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 21A TO220FP-3 CoolMOS CP
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2En existencias
500Se espera el 26/5/2026
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$5.43
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$3.49
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|
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$2.66
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$1.93
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Min.: 1
Mult.: 1
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|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
165 mOhms
|
- 20 V, 20 V
|
3.5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.3A TO220FP-3
- IPA60R400CEXKSA1
- Infineon Technologies
-
1:
$2.05
-
63En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA60R400CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.3A TO220FP-3
|
|
63En existencias
|
|
|
$2.05
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$1.08
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|
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$0.844
|
|
|
$0.631
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|
|
Ver
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|
|
$0.534
|
|
|
$0.515
|
|
|
$0.504
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
14.7 A
|
890 mOhms
|
- 20 V, 20 V
|
3 V
|
32 nC
|
- 40 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA65R400CEXKSA1
- Infineon Technologies
-
1:
$1.94
-
71En existencias
-
500Se espera el 26/5/2026
-
NRND
|
N.º de artículo de Mouser
726-IPA65R400CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
71En existencias
500Se espera el 26/5/2026
|
|
|
$1.94
|
|
|
$0.927
|
|
|
$0.771
|
|
|
$0.63
|
|
|
Ver
|
|
|
$0.551
|
|
|
$0.524
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
15.1 A
|
940 mOhms
|
- 20 V, 20 V
|
3 V
|
39 nC
|
- 55 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA80R1K4CEXKSA2
- Infineon Technologies
-
1:
$2.09
-
121En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA80R1K4CEXKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
121En existencias
|
|
|
$2.09
|
|
|
$1.21
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$0.916
|
|
|
$0.711
|
|
|
Ver
|
|
|
$0.601
|
|
|
$0.58
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3.9 A
|
1.22 Ohms
|
- 20 V, 20 V
|
2.1 V
|
23 nC
|
- 40 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R2K1CEAUMA1
- Infineon Technologies
-
1:
$0.88
-
130En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD60R2K1CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
130En existencias
|
|
|
$0.88
|
|
|
$0.549
|
|
|
$0.355
|
|
|
$0.272
|
|
|
$0.215
|
|
|
Ver
|
|
|
$0.245
|
|
|
$0.188
|
|
|
$0.174
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.7 A
|
2.1 Ohms
|
- 20 V, 20 V
|
3 V
|
6.7 nC
|
- 40 C
|
+ 150 C
|
38 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R650CEAUMA1
- Infineon Technologies
-
1:
$1.31
-
78En existencias
-
2,500Se espera el 13/8/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD60R650CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
78En existencias
2,500Se espera el 13/8/2026
|
|
|
$1.31
|
|
|
$0.821
|
|
|
$0.541
|
|
|
$0.421
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.382
|
|
|
$0.304
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9.9 A
|
540 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20.5 nC
|
- 40 C
|
+ 150 C
|
82 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD65R400CEAUMA1
- Infineon Technologies
-
1:
$1.59
-
801En existencias
-
2,500Se espera el 11/6/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD65R400CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
801En existencias
2,500Se espera el 11/6/2026
|
|
|
$1.59
|
|
|
$1.01
|
|
|
$0.648
|
|
|
$0.513
|
|
|
$0.425
|
|
|
Ver
|
|
|
$0.476
|
|
|
$0.397
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
15.1 A
|
400 mOhms
|
- 20 V, 20 V
|
2.5 V
|
39 nC
|
- 55 C
|
+ 150 C
|
118 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|