|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0901NSATMA1
- Infineon Technologies
-
1:
$1.38
-
8,599En existencias
|
N.º de artículo de Mouser
726-BSC0901NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
8,599En existencias
|
|
|
$1.38
|
|
|
$0.635
|
|
|
$0.453
|
|
|
$0.375
|
|
|
Ver
|
|
|
$0.329
|
|
|
$0.333
|
|
|
$0.329
|
|
|
$0.329
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.6 mOhms
|
- 20 V, 20 V
|
1.2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ009NE2LS5ATMA1
- Infineon Technologies
-
1:
$1.71
-
3,597En existencias
|
N.º de artículo de Mouser
726-BSZ009NE2LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
3,597En existencias
|
|
|
$1.71
|
|
|
$1.39
|
|
|
$1.19
|
|
|
$1.02
|
|
|
Ver
|
|
|
$0.88
|
|
|
$0.971
|
|
|
$0.937
|
|
|
$0.88
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
960 uOhms
|
- 16 V, 16 V
|
2 V
|
92 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
- IQE012N03LM5CGATMA1
- Infineon Technologies
-
1:
$2.66
-
3,500En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE012N03LM5CGAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
|
|
3,500En existencias
|
|
|
$2.66
|
|
|
$1.70
|
|
|
$1.18
|
|
|
$1.00
|
|
|
Ver
|
|
|
$0.795
|
|
|
$0.886
|
|
|
$0.838
|
|
|
$0.795
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
224 A
|
1.15 mOhms
|
16 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQDH29NE2LM5CGATMA1
- Infineon Technologies
-
1:
$3.11
-
3,977En existencias
|
N.º de artículo de Mouser
726-IQDH29NE2LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
3,977En existencias
|
|
|
$3.11
|
|
|
$2.14
|
|
|
$1.82
|
|
|
$1.81
|
|
|
$1.69
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
25 V
|
789 A
|
290 uOhms
|
- 16 V, 16 V
|
2 V
|
88 nC
|
- 55 C
|
+ 150 C
|
333 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQE006NE2LM5CGSCATMA1
- Infineon Technologies
-
1:
$3.69
-
6,744En existencias
-
6,000Se espera el 15/4/2027
|
N.º de artículo de Mouser
726-IQE006NE2LM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
6,744En existencias
6,000Se espera el 15/4/2027
|
|
|
$3.69
|
|
|
$2.41
|
|
|
$1.68
|
|
|
$1.37
|
|
|
Ver
|
|
|
$1.27
|
|
|
$1.36
|
|
|
$1.31
|
|
|
$1.27
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
25 V
|
47 A
|
580 uOhms
|
- 16 V, 16 V
|
2 V
|
82 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQE006NE2LM5SCATMA1
- Infineon Technologies
-
1:
$3.05
-
5,875En existencias
-
2,800Se espera el 18/5/2026
|
N.º de artículo de Mouser
726-IQE006NE2LM5SCAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
5,875En existencias
2,800Se espera el 18/5/2026
|
|
|
$3.05
|
|
|
$1.99
|
|
|
$1.37
|
|
|
$1.13
|
|
|
$1.05
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
25 V
|
47 A
|
580 uOhms
|
- 16 V, 16 V
|
2 V
|
82 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ0904NSIATMA1
- Infineon Technologies
-
1:
$1.16
-
34,180En existencias
|
N.º de artículo de Mouser
726-BSZ0904NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
34,180En existencias
|
|
|
$1.16
|
|
|
$0.712
|
|
|
$0.476
|
|
|
$0.369
|
|
|
$0.272
|
|
|
Ver
|
|
|
$0.305
|
|
|
$0.258
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
4.6 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQE008N03LM5ATMA1
- Infineon Technologies
-
1:
$3.09
-
5,069En existencias
|
N.º de artículo de Mouser
726-IQE008N03LM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
5,069En existencias
|
|
|
$3.09
|
|
|
$2.00
|
|
|
$1.38
|
|
|
$1.12
|
|
|
$1.06
|
|
|
$0.964
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
30 V
|
253 A
|
850 uOhms
|
- 16 V, 16 V
|
2 V
|
64 nC
|
- 55 C
|
+ 150 C
|
89 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQE008N03LM5CGATMA1
- Infineon Technologies
-
1:
$2.82
-
2,210En existencias
|
N.º de artículo de Mouser
726-IQE008N03LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
2,210En existencias
|
|
|
$2.82
|
|
|
$1.83
|
|
|
$1.26
|
|
|
$1.04
|
|
|
$0.964
|
|
|
$0.964
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
30 V
|
253 A
|
850 uOhms
|
- 16 V, 16 V
|
2 V
|
64 nC
|
- 55 C
|
+ 150 C
|
89 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ019N03LSATMA1
- Infineon Technologies
-
1:
$1.99
-
246En existencias
-
40,000En pedido
|
N.º de artículo de Mouser
726-BSZ019N03LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
246En existencias
40,000En pedido
Existencias:
246 Se puede enviar inmediatamente
En pedido:
20,000 Se espera el 1/4/2027
20,000 Se espera el 12/4/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.99
|
|
|
$1.17
|
|
|
$0.805
|
|
|
$0.716
|
|
|
$0.625
|
|
|
$0.583
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
149 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ065N03LSATMA1
- Infineon Technologies
-
1:
$1.13
-
5,535En existencias
|
N.º de artículo de Mouser
726-BSZ065N03LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
5,535En existencias
|
|
|
$1.13
|
|
|
$0.714
|
|
|
$0.477
|
|
|
$0.369
|
|
|
Ver
|
|
|
$0.249
|
|
|
$0.304
|
|
|
$0.30
|
|
|
$0.249
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
49 A
|
6.5 mOhms
|
- 20 V, 20 V
|
2 V
|
10 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- IQDH35N03LM5CGATMA1
- Infineon Technologies
-
1:
$3.69
-
10En existencias
-
15,000En pedido
|
N.º de artículo de Mouser
726-IQDH35N03LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
10En existencias
15,000En pedido
Existencias:
10 Se puede enviar inmediatamente
En pedido:
5,000 Se espera el 27/8/2026
10,000 Se espera el 3/9/2026
Plazo de entrega de fábrica:
18 Semanas
|
|
|
$3.69
|
|
|
$2.53
|
|
|
$1.80
|
|
|
$1.78
|
|
|
$1.67
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
700 A
|
350 uOhms
|
- 20 V, 20 V
|
2 V
|
91 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC011N03LSATMA1
- Infineon Technologies
-
1:
$1.96
-
35,000En pedido
|
N.º de artículo de Mouser
726-BSC011N03LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
35,000En pedido
En pedido:
5,000 Se espera el 20/8/2026
5,000 Se espera el 27/8/2026
10,000 Se espera el 28/1/2027
15,000 Se espera el 1/4/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.96
|
|
|
$1.24
|
|
|
$0.869
|
|
|
$0.726
|
|
|
Ver
|
|
|
$0.63
|
|
|
$0.663
|
|
|
$0.63
|
|
|
$0.63
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
230 A
|
1.1 mOhms
|
- 20 V, 20 V
|
2 V
|
72 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0504NSIATMA1
- Infineon Technologies
-
1:
$1.45
-
12,480Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-BSC0504NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
12,480Se espera el 9/7/2026
|
|
|
$1.45
|
|
|
$0.878
|
|
|
$0.597
|
|
|
$0.484
|
|
|
Ver
|
|
|
$0.339
|
|
|
$0.41
|
|
|
$0.392
|
|
|
$0.339
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
72 A
|
3.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
11.1 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ0506NSATMA1
- Infineon Technologies
-
1:
$1.34
-
27,712En pedido
|
N.º de artículo de Mouser
726-BSZ0506NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
27,712En pedido
En pedido:
7,712 Se espera el 28/1/2027
20,000 Se espera el 25/3/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.34
|
|
|
$0.832
|
|
|
$0.554
|
|
|
$0.427
|
|
|
Ver
|
|
|
$0.319
|
|
|
$0.395
|
|
|
$0.356
|
|
|
$0.319
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
4.4 mOhms
|
- 20 V, 20 V
|
2 V
|
11 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
- IQE012N03LM5CGSCATMA1
- Infineon Technologies
-
1:
$2.85
-
6,000En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE012N03LM5CGSC
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
|
|
6,000En pedido
|
|
|
$2.85
|
|
|
$1.82
|
|
|
$1.24
|
|
|
$1.03
|
|
|
Ver
|
|
|
$0.898
|
|
|
$0.962
|
|
|
$0.929
|
|
|
$0.898
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
224 A
|
1.15 mOhms
|
16 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|