|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N10S5N040ATMA1
- Infineon Technologies
-
1:
$3.42
-
48En existencias
-
25,000Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IAUC100N10S5N040
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
48En existencias
25,000Se espera el 1/6/2026
|
|
|
$3.42
|
|
|
$2.23
|
|
|
$1.52
|
|
|
$1.27
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.21
|
|
|
$1.18
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
5.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
78 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS165N08S5N029ATMA1
- Infineon Technologies
-
1:
$4.39
-
348En existencias
|
N.º de artículo de Mouser
726-IAUS165N08S5N029
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
348En existencias
|
|
|
$4.39
|
|
|
$2.89
|
|
|
$2.04
|
|
|
$1.72
|
|
|
$1.61
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
165 A
|
4.4 mOhms
|
- 20 V, 20 V
|
2.2 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
- IAUT165N08S5N029ATMA2
- Infineon Technologies
-
1:
$4.01
-
862En existencias
|
N.º de artículo de Mouser
726-IAUT165N08S5N029
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
|
|
862En existencias
|
|
|
$4.01
|
|
|
$2.63
|
|
|
$1.84
|
|
|
$1.52
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
165 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
- IPG20N10S436AATMA1
- Infineon Technologies
-
1:
$2.12
-
1,643En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-IPG20N10S436AATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
|
|
1,643En existencias
5,000En pedido
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.915
|
|
|
$0.726
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.636
|
|
|
$0.626
|
|
|
$0.594
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
31 mOhms, 31 mOhms
|
- 20 V, 20 V
|
2.7 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-35
- Infineon Technologies
-
1:
$1.93
-
1,513En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-35
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
1,513En existencias
|
|
|
$1.93
|
|
|
$1.24
|
|
|
$0.853
|
|
|
$0.723
|
|
|
$0.615
|
|
|
$0.575
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
35 mOhms
|
- 16 V, 16 V
|
1.1 V
|
13.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
Infineon Technologies IPD30N10S3L34ATMA2
- IPD30N10S3L34ATMA2
- Infineon Technologies
-
1:
$2.07
-
87En existencias
|
N.º de artículo de Mouser
726-IPD30N10S3L34AT2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
87En existencias
|
|
|
$2.07
|
|
|
$1.33
|
|
|
$0.89
|
|
|
$0.707
|
|
|
$0.649
|
|
|
$0.592
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
1 Channel
|
100 V
|
30 A
|
31 mOhms
|
- 20 V, 20 V
|
2.4 V
|
24 nC
|
- 55 C
|
+ 175 C
|
57 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB70N10S3L-12
- Infineon Technologies
-
1:
$3.65
-
3,729En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPB70N10S3L-12
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
3,729En pedido
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.48
|
|
|
$1.47
|
|
|
Ver
|
|
|
$1.42
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
12 mOhms
|
- 20 V, 20 V
|
1.7 V
|
60 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A DPAK-2 OptiMOS-T
- IPD35N10S3L-26
- Infineon Technologies
-
1:
$2.32
-
7,499Se espera el 9/7/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD35N10S3L26
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A DPAK-2 OptiMOS-T
|
|
7,499Se espera el 9/7/2026
|
|
|
$2.32
|
|
|
$1.48
|
|
|
$1.03
|
|
|
$0.868
|
|
|
$0.751
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
24 mOhms
|
- 20 V, 20 V
|
1.2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 50A DPAK-2 OptiMOS-T
- IPD50N10S3L-16
- Infineon Technologies
-
1:
$2.98
-
2,500En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPD50N10S3L16
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 50A DPAK-2 OptiMOS-T
|
|
2,500En pedido
|
|
|
$2.98
|
|
|
$1.83
|
|
|
$1.20
|
|
|
$0.993
|
|
|
$0.948
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
50 A
|
15 mOhms
|
- 20 V, 20 V
|
1.2 V
|
49 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB50N10S3L-16
- Infineon Technologies
-
1:
$3.43
-
485En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPB50N10S3L16
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
485En pedido
|
|
|
$3.43
|
|
|
$2.23
|
|
|
$1.55
|
|
|
$1.29
|
|
|
$1.13
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
50 A
|
15.4 mOhms
|
- 20 V, 20 V
|
2.4 V
|
64 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC64N08S5L075ATMA1
- Infineon Technologies
-
1:
$1.99
-
Plazo de entrega no en existencias 26 Semanas
|
N.º de artículo de Mouser
726-IAUC64N08S5L075A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
Plazo de entrega no en existencias 26 Semanas
|
|
|
$1.99
|
|
|
$1.29
|
|
|
$0.928
|
|
|
$0.781
|
|
|
Ver
|
|
|
$0.625
|
|
|
$0.702
|
|
|
$0.70
|
|
|
$0.625
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V AUTO GRADE 1 N-CH HEXFET
- AUIRF7669L2TR
- Infineon Technologies
-
4,000:
$5.64
-
Plazo de entrega no en existencias 22 Semanas
|
N.º de artículo de Mouser
942-AUIRF7669L2TR
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V AUTO GRADE 1 N-CH HEXFET
|
|
Plazo de entrega no en existencias 22 Semanas
|
|
Min.: 4,000
Mult.: 4,000
:
4,000
|
|
|
Si
|
SMD/SMT
|
DirectFET-L8
|
N-Channel
|
1 Channel
|
100 V
|
114 A
|
3.5 mOhms
|
- 20 V, 20 V
|
4 V
|
120 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
|
Reel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- AUIRFP4110
- Infineon Technologies
-
1:
$9.17
-
Plazo de entrega no en existencias 22 Semanas
|
N.º de artículo de Mouser
942-AUIRFP4110
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
Plazo de entrega no en existencias 22 Semanas
|
|
|
$9.17
|
|
|
$5.50
|
|
|
$4.62
|
|
|
$4.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
3.7 mOhms
|
- 20 V, 20 V
|
4 V
|
210 nC
|
- 55 C
|
+ 175 C
|
370 W
|
Enhancement
|
AEC-Q101
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
Infineon Technologies IPP100N10S305AKSA2
- IPP100N10S305AKSA2
- Infineon Technologies
-
500:
$3.15
-
Plazo de entrega no en existencias 9 Semanas
|
N.º de artículo de Mouser
726-IPP100N10S305AK2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
Plazo de entrega no en existencias 9 Semanas
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.8 mOhms
|
- 20 V, 20 V
|
4 V
|
135 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Tube
|
|