|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 180A D2PAK-6
- IPB180N10S402ATMA1
- Infineon Technologies
-
1:
$6.62
-
559En existencias
|
N.º de artículo de Mouser
726-IPB180N10S402ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 180A D2PAK-6
|
|
559En existencias
|
|
|
$6.62
|
|
|
$4.36
|
|
|
$3.21
|
|
|
$2.99
|
|
|
$2.79
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
2 V
|
156 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 80A D2PAK-2 OptiMOS
- IPB80N08S2-07
- Infineon Technologies
-
1:
$6.45
-
1,133En existencias
|
N.º de artículo de Mouser
726-IPB80N08S207
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 80A D2PAK-2 OptiMOS
|
|
1,133En existencias
|
|
|
$6.45
|
|
|
$4.31
|
|
|
$3.10
|
|
|
$2.76
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
75 V
|
80 A
|
6.5 mOhms
|
- 20 V, 20 V
|
3 V
|
180 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 60A DPAK-2
- IPD60N10S4L-12
- Infineon Technologies
-
1:
$2.08
-
18,151En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
726-IPD60N10S4L-12
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 60A DPAK-2
|
|
18,151En existencias
2,500En pedido
|
|
|
$2.08
|
|
|
$1.33
|
|
|
$0.92
|
|
|
$0.78
|
|
|
$0.675
|
|
|
$0.62
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
60 A
|
9.8 mOhms
|
- 16 V, 16 V
|
1.1 V
|
49 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPD90N10S406ATMA1
- Infineon Technologies
-
1:
$3.05
-
5,402En existencias
|
N.º de artículo de Mouser
726-IPD90N10S406ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
5,402En existencias
|
|
|
$3.05
|
|
|
$1.98
|
|
|
$1.36
|
|
|
$1.10
|
|
|
$1.05
|
|
|
$0.975
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
6.7 mOhms
|
- 20 V, 20 V
|
2.7 V
|
68 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD90N10S4L06ATMA1
- Infineon Technologies
-
1:
$3.01
-
9,270En existencias
|
N.º de artículo de Mouser
726-IPD90N10S4L06ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
9,270En existencias
|
|
|
$3.01
|
|
|
$1.87
|
|
|
$1.35
|
|
|
$1.09
|
|
|
$1.03
|
|
|
$0.961
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
5.8 mOhms
|
- 16 V, 16 V
|
1.1 V
|
98 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A D2PAK-2 OptiMOS-T
- IPB35N10S3L26ATMA1
- Infineon Technologies
-
1:
$2.88
-
2,109En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB35N10S3L26ATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A D2PAK-2 OptiMOS-T
|
|
2,109En existencias
|
|
|
$2.88
|
|
|
$1.87
|
|
|
$1.29
|
|
|
$1.07
|
|
|
$1.06
|
|
|
Ver
|
|
|
$1.04
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
20.3 mOhms
|
- 20 V, 20 V
|
1.2 V
|
39 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB70N10S312ATMA1
- Infineon Technologies
-
1:
$3.90
-
1,235En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB70N10S312ATMA
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
1,235En existencias
|
|
|
$3.90
|
|
|
$2.55
|
|
|
$1.82
|
|
|
$1.49
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
9.4 mOhms
|
- 20 V, 20 V
|
2 V
|
66 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 30A DPAK-2 OptiMOS-T
- IPD30N10S3L34ATMA1
- Infineon Technologies
-
1:
$1.86
-
2,788En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD30N10S3L34ATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 30A DPAK-2 OptiMOS-T
|
|
2,788En existencias
|
|
|
$1.86
|
|
|
$1.23
|
|
|
$0.878
|
|
|
$0.698
|
|
|
$0.641
|
|
|
$0.592
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
30 A
|
31 mOhms
|
- 20 V, 20 V
|
1.2 V
|
24 nC
|
- 55 C
|
+ 175 C
|
57 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS300N08S5N012ATMA1
- Infineon Technologies
-
1:
$6.62
-
3,590En existencias
|
N.º de artículo de Mouser
726-IAUS300N08S5N012
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
3,590En existencias
|
|
|
$6.62
|
|
|
$4.44
|
|
|
$3.21
|
|
|
$2.99
|
|
|
$2.79
|
|
|
$2.79
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
300 A
|
1.7 mOhms
|
- 20 V, 20 V
|
3.8 V
|
231 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
- IAUT240N08S5N019ATMA1
- Infineon Technologies
-
1:
$4.62
-
3,841En existencias
|
N.º de artículo de Mouser
726-IAUT240N08S5N019
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
|
|
3,841En existencias
|
|
|
$4.62
|
|
|
$3.06
|
|
|
$2.16
|
|
|
$1.91
|
|
|
$1.81
|
|
|
$1.78
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
240 A
|
3 mOhms
|
- 20 V, 20 V
|
2.2 V
|
130 nC
|
- 55 C
|
+ 175 C
|
230 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT260N10S5N019ATMA1
- Infineon Technologies
-
1:
$5.29
-
2,404En existencias
|
N.º de artículo de Mouser
726-IAUT260N10S5N01
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,404En existencias
|
|
|
$5.29
|
|
|
$3.41
|
|
|
$2.58
|
|
|
$2.30
|
|
|
$2.29
|
|
|
$2.14
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
260 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
128 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT300N08S5N014ATMA1
- Infineon Technologies
-
1:
$5.72
-
1,906En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-IAUT300N08S5N014
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,906En existencias
10,000En pedido
Existencias:
1,906 Se puede enviar inmediatamente
En pedido:
4,000 Se espera el 11/6/2026
6,000 Se espera el 13/8/2026
Plazo de entrega de fábrica:
18 Semanas
|
|
|
$5.72
|
|
|
$3.46
|
|
|
$2.67
|
|
|
$2.43
|
|
|
$2.25
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
300 A
|
1.4 mOhms
|
- 20 V, 20 V
|
2.2 V
|
187 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT300N10S5N015ATMA1
- Infineon Technologies
-
1:
$6.39
-
1,500En existencias
-
6,000Se espera el 24/9/2026
|
N.º de artículo de Mouser
726-IAUT300N10S5N015
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,500En existencias
6,000Se espera el 24/9/2026
|
|
|
$6.39
|
|
|
$4.03
|
|
|
$2.90
|
|
|
$2.86
|
|
|
$2.65
|
|
|
Ver
|
|
|
$2.82
|
|
|
$2.58
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
1.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
166 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-22
- Infineon Technologies
-
1:
$2.38
-
2,879En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-IPG20N10S4L-22
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
2,879En existencias
5,000En pedido
|
|
|
$2.38
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.862
|
|
|
$0.799
|
|
|
$0.747
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L22ATMA1
- Infineon Technologies
-
1:
$2.40
-
7,714En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L22ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
7,714En existencias
|
|
|
$2.40
|
|
|
$1.50
|
|
|
$1.07
|
|
|
$0.896
|
|
|
Ver
|
|
|
$0.766
|
|
|
$0.821
|
|
|
$0.808
|
|
|
$0.766
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L35ATMA1
- Infineon Technologies
-
1:
$2.11
-
20,421En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L35ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
20,421En existencias
|
|
|
$2.11
|
|
|
$1.27
|
|
|
$0.881
|
|
|
$0.726
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.636
|
|
|
$0.626
|
|
|
$0.594
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
29 mOhms, 29 mOhms
|
- 16 V, 16 V
|
1.1 V
|
17.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A DPAK-2 OptiMOS-T
- IPD70N10S3L-12
- Infineon Technologies
-
1:
$3.18
-
3,313En existencias
-
5,000En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPD70N10S3L12
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A DPAK-2 OptiMOS-T
|
|
3,313En existencias
5,000En pedido
|
|
|
$3.18
|
|
|
$3.11
|
|
|
$2.38
|
|
|
$1.99
|
|
|
$1.71
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
11.5 mOhms
|
- 20 V, 20 V
|
1.7 V
|
59 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 22A DPAK-2 OptiMOS
- IPD22N08S2L-50
- Infineon Technologies
-
1:
$2.24
-
1,279En existencias
|
N.º de artículo de Mouser
726-IPD22N08S2L-50
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 22A DPAK-2 OptiMOS
|
|
1,279En existencias
|
|
|
$2.24
|
|
|
$1.44
|
|
|
$0.97
|
|
|
$0.805
|
|
|
$0.723
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
75 V
|
22 A
|
50 mOhms
|
- 20 V, 20 V
|
1.6 V
|
33 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
- IPD30N08S222ATMA1
- Infineon Technologies
-
1:
$2.46
-
1,156En existencias
|
N.º de artículo de Mouser
726-IPD30N08S222ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
|
|
1,156En existencias
|
|
|
$2.46
|
|
|
$1.58
|
|
|
$1.08
|
|
|
$0.861
|
|
|
$0.797
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
75 V
|
30 A
|
17.4 mOhms
|
- 20 V, 20 V
|
2.1 V
|
57 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 75/80V
- IPD50N08S4-13
- Infineon Technologies
-
1:
$1.76
-
2,148En existencias
|
N.º de artículo de Mouser
726-IPD50N08S4-13
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 75/80V
|
|
2,148En existencias
|
|
|
$1.76
|
|
|
$1.12
|
|
|
$0.745
|
|
|
$0.611
|
|
|
$0.551
|
|
|
$0.486
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
80 V
|
50 A
|
11.2 mOhms
|
- 20 V, 20 V
|
2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
72 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 60A DPAK-2
- IPD60N10S4L12ATMA1
- Infineon Technologies
-
1:
$2.16
-
1,581En existencias
-
7,500En pedido
|
N.º de artículo de Mouser
726-IPD60N10S4L12ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 60A DPAK-2
|
|
1,581En existencias
7,500En pedido
|
|
|
$2.16
|
|
|
$1.32
|
|
|
$0.871
|
|
|
$0.705
|
|
|
$0.622
|
|
|
Ver
|
|
|
$0.641
|
|
|
$0.62
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
60 A
|
9.8 mOhms
|
- 16 V, 16 V
|
1.1 V
|
49 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A DPAK-2 OptiMOS-T
- IPD35N10S3L26ATMA1
- Infineon Technologies
-
1:
$2.34
-
749En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD35N10S3L26ATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 35A DPAK-2 OptiMOS-T
|
|
749En existencias
|
|
|
$2.34
|
|
|
$1.44
|
|
|
$1.03
|
|
|
$0.771
|
|
|
$0.755
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
39 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A DPAK-2 OptiMOS-T
- IPD70N10S3-12
- Infineon Technologies
-
1:
$3.21
-
248En existencias
-
2,500En pedido
-
NRND
|
N.º de artículo de Mouser
726-IPD70N10S312
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A DPAK-2 OptiMOS-T
|
|
248En existencias
2,500En pedido
|
|
|
$3.21
|
|
|
$2.13
|
|
|
$1.53
|
|
|
$1.28
|
|
|
$1.22
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
11.1 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG16N10S461AATMA1
- Infineon Technologies
-
1:
$1.71
-
2,917En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-G16N10S461AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,917En existencias
5,000En pedido
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.722
|
|
|
$0.568
|
|
|
Ver
|
|
|
$0.44
|
|
|
$0.477
|
|
|
$0.475
|
|
|
$0.44
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
16 A
|
61 mOhms
|
- 20 V, 20 V
|
2.8 V
|
7 nC
|
- 55 C
|
+ 175 C
|
29 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N10S5N040ATMA1
- Infineon Technologies
-
1:
$3.42
-
48En existencias
-
25,000Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IAUC100N10S5N040
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
48En existencias
25,000Se espera el 1/6/2026
|
|
|
$3.42
|
|
|
$2.23
|
|
|
$1.52
|
|
|
$1.27
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.21
|
|
|
$1.18
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
5.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
78 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|