|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56p
- DMN53D0LW-7
- Diodes Incorporated
-
1:
$0.31
-
46,369En existencias
|
N.º de artículo de Mouser
621-DMN53D0LW-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56p
|
|
46,369En existencias
|
|
|
$0.31
|
|
|
$0.193
|
|
|
$0.126
|
|
|
$0.097
|
|
|
$0.074
|
|
|
Ver
|
|
|
$0.085
|
|
|
$0.062
|
|
Min.: 1
Mult.: 1
Máx.: 6,000
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-323-3
|
N-Channel
|
1 Channel
|
50 V
|
360 mA
|
2 Ohms
|
- 20 V, 20 V
|
800 mV
|
1.2 nC
|
- 55 C
|
+ 150 C
|
420 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
- DMN53D0L-13
- Diodes Incorporated
-
1:
$0.35
-
166En existencias
-
10,000Se espera el 24/7/2026
|
N.º de artículo de Mouser
621-DMN53D0L-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
|
|
166En existencias
10,000Se espera el 24/7/2026
|
|
|
$0.35
|
|
|
$0.219
|
|
|
$0.136
|
|
|
$0.097
|
|
|
Ver
|
|
|
$0.047
|
|
|
$0.085
|
|
|
$0.075
|
|
|
$0.063
|
|
|
$0.047
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
500 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
1.5 V
|
1.2 nC
|
- 55 C
|
+ 150 C
|
420 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 2N7002 Family
- DMN53D0LQ-13
- Diodes Incorporated
-
1:
$0.31
-
2,422En existencias
-
40,000En pedido
|
N.º de artículo de Mouser
621-DMN53D0LQ-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 2N7002 Family
|
|
2,422En existencias
40,000En pedido
Existencias:
2,422 Se puede enviar inmediatamente
En pedido:
20,000 Se espera el 20/7/2026
20,000 Se espera el 12/2/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.31
|
|
|
$0.195
|
|
|
$0.123
|
|
|
$0.095
|
|
|
Ver
|
|
|
$0.075
|
|
|
$0.08
|
|
|
$0.075
|
|
|
$0.075
|
|
Min.: 1
Mult.: 1
Máx.: 3,360
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
500 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
800 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
540 mW
|
Enhancement
|
AEC-Q101
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF
- DMN53D0LW-13
- Diodes Incorporated
-
1:
$0.35
-
19,515En existencias
-
20,000Se espera el 29/1/2027
|
N.º de artículo de Mouser
621-DMN53D0LW-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF
|
|
19,515En existencias
20,000Se espera el 29/1/2027
|
|
|
$0.35
|
|
|
$0.242
|
|
|
$0.154
|
|
|
$0.097
|
|
|
$0.056
|
|
|
Ver
|
|
|
$0.085
|
|
|
$0.075
|
|
|
$0.063
|
|
|
$0.04
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-323-3
|
N-Channel
|
1 Channel
|
50 V
|
360 mA
|
2 Ohms
|
- 20 V, 20 V
|
800 mV
|
1.2 nC
|
- 55 C
|
+ 150 C
|
420 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
- DMN53D0L-7
- Diodes Incorporated
-
1:
$0.33
-
442,473En pedido
|
N.º de artículo de Mouser
621-DMN53D0L-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
|
|
442,473En pedido
En pedido:
376,473 Pendiente
66,000 Se espera el 8/7/2026
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.33
|
|
|
$0.183
|
|
|
$0.118
|
|
|
$0.087
|
|
|
$0.077
|
|
|
$0.056
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
500 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
800 mV
|
1.2 nC
|
- 55 C
|
+ 150 C
|
360 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
- DMN53D0LDW-7
- Diodes Incorporated
-
1:
$0.33
-
91,244En pedido
|
N.º de artículo de Mouser
621-DMN53D0LDW-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
|
|
91,244En pedido
En pedido:
31,244 Se espera el 21/5/2026
27,000 Se espera el 21/8/2026
33,000 Se espera el 19/2/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.33
|
|
|
$0.202
|
|
|
$0.127
|
|
|
$0.094
|
|
|
$0.083
|
|
|
$0.05
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel
|
2 Channel
|
50 V
|
360 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
800 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
310 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch. 50V 500mA AEC-Q101
- DMN53D0LQ-7
- Diodes Incorporated
-
1:
$0.30
-
43,895En pedido
|
N.º de artículo de Mouser
621-DMN53D0LQ-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch. 50V 500mA AEC-Q101
|
|
43,895En pedido
En pedido:
25,895 Se espera el 18/11/2026
18,000 Se espera el 12/2/2027
Plazo de entrega de fábrica:
40 Semanas
|
|
|
$0.30
|
|
|
$0.184
|
|
|
$0.115
|
|
|
$0.088
|
|
|
$0.078
|
|
|
$0.063
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
500 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
800 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
540 mW
|
Enhancement
|
AEC-Q101
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
- DMN53D0LDW-13
- Diodes Incorporated
-
1:
$0.33
-
19,984Se espera el 21/7/2026
|
N.º de artículo de Mouser
621-DMN53D0LDW-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
|
|
19,984Se espera el 21/7/2026
|
|
|
$0.33
|
|
|
$0.202
|
|
|
$0.142
|
|
|
$0.10
|
|
|
Ver
|
|
|
$0.053
|
|
|
$0.085
|
|
|
$0.08
|
|
|
$0.074
|
|
|
$0.053
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel
|
2 Channel
|
50 V
|
360 mA
|
1.6 Ohms
|
- 20 V, 20 V
|
800 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
310 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs
- DMN53D0U-7
- Diodes Incorporated
-
1:
$0.37
-
29,500Se espera el 12/2/2027
|
N.º de artículo de Mouser
621-DMN53D0U-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs
|
|
29,500Se espera el 12/2/2027
|
|
|
$0.37
|
|
|
$0.227
|
|
|
$0.146
|
|
|
$0.102
|
|
|
$0.09
|
|
|
$0.073
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
300 mA
|
2 Ohms
|
- 12 V, 12 V
|
400 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
520 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
- DMN53D0U-13
- Diodes Incorporated
-
1:
$0.44
-
Plazo de entrega no en existencias 40 Semanas
|
N.º de artículo de Mouser
621-DMN53D0U-13
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET
|
|
Plazo de entrega no en existencias 40 Semanas
|
|
|
$0.44
|
|
|
$0.299
|
|
|
$0.189
|
|
|
$0.119
|
|
|
Ver
|
|
|
$0.052
|
|
|
$0.104
|
|
|
$0.092
|
|
|
$0.078
|
|
|
$0.052
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
50 V
|
300 mA
|
2 Ohms
|
- 12 V, 12 V
|
400 mV
|
600 pC
|
- 55 C
|
+ 150 C
|
520 mW
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|