|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R060C7XKSA1
- Infineon Technologies
-
1:
$8.37
-
589En existencias
|
N.º de artículo de Mouser
726-IPP60R060C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
589En existencias
|
|
|
$8.37
|
|
|
$4.54
|
|
|
$4.17
|
|
|
$4.16
|
|
|
$3.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
60 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R040C7ATMA1
- Infineon Technologies
-
1:
$11.10
-
904En existencias
|
N.º de artículo de Mouser
726-IPB60R040C7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
904En existencias
|
|
|
$11.10
|
|
|
$7.90
|
|
|
$6.15
|
|
|
$5.74
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3 V
|
107 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD65R190C7ATMA1
- Infineon Technologies
-
1:
$3.50
-
2,399En existencias
|
N.º de artículo de Mouser
726-IPD65R190C7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,399En existencias
|
|
|
$3.50
|
|
|
$2.28
|
|
|
$1.59
|
|
|
$1.29
|
|
|
$1.27
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
168 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R104C7AUMA1
- Infineon Technologies
-
1:
$6.76
-
2,814En existencias
|
N.º de artículo de Mouser
726-IPL60R104C7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,814En existencias
|
|
|
$6.76
|
|
|
$4.43
|
|
|
$3.26
|
|
|
$2.90
|
|
|
$2.77
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
83 A
|
104 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 40 C
|
+ 150 C
|
122 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R095C7XKSA1
- Infineon Technologies
-
1:
$6.55
-
1,092En existencias
|
N.º de artículo de Mouser
726-IPP65R095C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,092En existencias
|
|
|
$6.55
|
|
|
$3.47
|
|
|
$3.17
|
|
|
$3.10
|
|
|
$2.75
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060C7XKSA1
- Infineon Technologies
-
1:
$9.15
-
915En existencias
|
N.º de artículo de Mouser
726-IPW60R060C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
915En existencias
|
|
|
$9.15
|
|
|
$5.35
|
|
|
$4.51
|
|
|
$4.50
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
- IPW65R019C7FKSA1
- Infineon Technologies
-
1:
$21.42
-
708En existencias
|
N.º de artículo de Mouser
726-IPW65R019C7FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
|
|
708En existencias
|
|
|
$21.42
|
|
|
$13.47
|
|
|
$12.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 700V 75A TO247-4
- IPZ65R019C7XKSA1
- Infineon Technologies
-
1:
$22.01
-
167En existencias
|
N.º de artículo de Mouser
726-IPZ65R019C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 700V 75A TO247-4
|
|
167En existencias
|
|
|
$22.01
|
|
|
$13.87
|
|
|
$13.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
17 mOhms
|
- 20 V, 20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZ65R065C7XKSA1
- Infineon Technologies
-
1:
$9.77
-
1,196En existencias
|
N.º de artículo de Mouser
726-IPZ65R065C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,196En existencias
|
|
|
$9.77
|
|
|
$5.81
|
|
|
$4.92
|
|
|
$4.91
|
|
|
$4.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
58 mOhms
|
- 20 V, 20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R180C7XKSA1
- Infineon Technologies
-
1:
$3.62
-
148En existencias
-
500Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPA60R180C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
148En existencias
500Se espera el 2/7/2026
|
|
|
$3.62
|
|
|
$1.82
|
|
|
$1.71
|
|
|
$1.33
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
346 mOhms
|
- 20 V, 20 V
|
3.5 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7
- IPP65R045C7XKSA1
- Infineon Technologies
-
1:
$10.14
-
184En existencias
-
500Se espera el 13/7/2026
|
N.º de artículo de Mouser
726-IPP65R045C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7
|
|
184En existencias
500Se espera el 13/7/2026
|
|
|
$10.14
|
|
|
$6.23
|
|
|
$5.76
|
|
|
$5.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
- 20 V, 20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099C7XKSA1
- Infineon Technologies
-
1:
$6.66
-
165En existencias
|
N.º de artículo de Mouser
726-IPW60R099C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
165En existencias
|
|
|
$6.66
|
|
|
$3.79
|
|
|
$3.16
|
|
|
$2.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180C7XKSA1
- Infineon Technologies
-
1:
$4.62
-
197En existencias
|
N.º de artículo de Mouser
726-IPW60R180C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
197En existencias
|
|
|
$4.62
|
|
|
$2.56
|
|
|
$2.10
|
|
|
$1.76
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R065C7
- Infineon Technologies
-
1:
$7.86
-
194En existencias
|
N.º de artículo de Mouser
726-IPW65R065C7
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
194En existencias
|
|
|
$7.86
|
|
|
$5.72
|
|
|
$4.76
|
|
|
$4.24
|
|
|
Ver
|
|
|
$4.01
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
65 mOhms
|
- 20 V, 20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R065C7XKSA1
- Infineon Technologies
-
1:
$8.96
-
58En existencias
|
N.º de artículo de Mouser
726-IPW65R065C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
58En existencias
|
|
|
$8.96
|
|
|
$5.23
|
|
|
$4.40
|
|
|
$4.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
58 mOhms
|
- 20 V, 20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R190C7
- Infineon Technologies
-
1:
$4.69
-
243En existencias
|
N.º de artículo de Mouser
726-IPW65R190C7
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
243En existencias
|
|
|
$4.69
|
|
|
$3.06
|
|
|
$2.40
|
|
|
$2.00
|
|
|
Ver
|
|
|
$1.86
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
168 mOhms
|
- 20 V, 20 V
|
3.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R190C7XKSA1
- Infineon Technologies
-
1:
$4.66
-
224En existencias
|
N.º de artículo de Mouser
726-IPW65R190C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
224En existencias
|
|
|
$4.66
|
|
|
$2.58
|
|
|
$2.12
|
|
|
$1.78
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
168 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZ60R099C7XKSA1
- Infineon Technologies
-
1:
$7.10
-
25En existencias
|
N.º de artículo de Mouser
726-IPZ60R099C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
25En existencias
|
|
|
$7.10
|
|
|
$4.07
|
|
|
$3.40
|
|
|
$3.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
99 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R060C7XKSA1
- Infineon Technologies
-
1:
$8.44
-
204En existencias
|
N.º de artículo de Mouser
726-IPA60R060C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
204En existencias
|
|
|
$8.44
|
|
|
$4.58
|
|
|
$4.21
|
|
|
$3.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
16 A
|
115 mOhms
|
- 20 V, 20 V
|
3.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
- IPA65R125C7XKSA1
- Infineon Technologies
-
1:
$5.18
-
73En existencias
|
N.º de artículo de Mouser
726-IPA65R125C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
|
|
73En existencias
|
|
|
$5.18
|
|
|
$2.69
|
|
|
$2.45
|
|
|
$2.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
35 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
- IPA65R190C7
- Infineon Technologies
-
1:
$3.45
-
463En existencias
|
N.º de artículo de Mouser
726-IPA65R190C7
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
|
|
463En existencias
|
|
|
$3.45
|
|
|
$2.25
|
|
|
$1.72
|
|
|
$1.43
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
168 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
- IPA65R190C7XKSA1
- Infineon Technologies
-
1:
$3.43
-
167En existencias
-
500Se espera el 28/5/2026
|
N.º de artículo de Mouser
726-IPA65R190C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
|
|
167En existencias
500Se espera el 28/5/2026
|
|
|
$3.43
|
|
|
$1.89
|
|
|
$1.71
|
|
|
$1.38
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
168 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 15A VSON-4
- IPL65R130C7AUMA1
- Infineon Technologies
-
1:
$5.41
-
16En existencias
-
3,000Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPL65R130C7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 15A VSON-4
|
|
16En existencias
3,000Se espera el 2/7/2026
|
|
|
$5.41
|
|
|
$3.60
|
|
|
$2.77
|
|
|
$2.38
|
|
|
$2.28
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
115 mOhms
|
- 20 V, 20 V
|
3 V
|
35 nC
|
- 40 C
|
+ 150 C
|
102 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R120C7XKSA1
- Infineon Technologies
-
1:
$5.13
-
583En existencias
|
N.º de artículo de Mouser
726-IPP60R120C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
583En existencias
|
|
|
$5.13
|
|
|
$2.66
|
|
|
$2.42
|
|
|
$1.99
|
|
|
$1.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
120 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180C7XKSA1
- Infineon Technologies
-
1:
$3.64
-
362En existencias
-
500Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPP60R180C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
362En existencias
500Se espera el 9/7/2026
|
|
|
$3.64
|
|
|
$1.83
|
|
|
$1.72
|
|
|
$1.34
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
155 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Tube
|
|