|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R018CFD7XKSA1
- Infineon Technologies
-
1:
$18.11
-
447En existencias
|
N.º de artículo de Mouser
726-IPW60R018CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
447En existencias
|
|
|
$18.11
|
|
|
$11.22
|
|
|
$10.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
101 A
|
18 mOhms
|
- 20 V, 20 V
|
3.5 V
|
251 nC
|
- 55 C
|
+ 150 C
|
416 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R040CFD7XKSA1
- Infineon Technologies
-
1:
$9.82
-
787En existencias
|
N.º de artículo de Mouser
726-IPW60R040CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
787En existencias
|
|
|
$9.82
|
|
|
$5.77
|
|
|
$5.65
|
|
|
$5.03
|
|
|
$4.70
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3.5 V
|
109 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280CFD7XKSA1
- Infineon Technologies
-
1:
$3.16
-
712En existencias
|
N.º de artículo de Mouser
726-IPP60R280CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
712En existencias
|
|
|
$3.16
|
|
|
$1.57
|
|
|
$1.42
|
|
|
$1.18
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R090CFD7XTMA1
- Infineon Technologies
-
1:
$5.25
-
517En existencias
|
N.º de artículo de Mouser
726-IPT60R090CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
517En existencias
|
|
|
$5.25
|
|
|
$3.49
|
|
|
$2.82
|
|
|
$2.36
|
|
|
$2.19
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
90 mOhms
|
- 20 V, 20 V
|
4 V
|
42 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R125CFD7XKSA1
- Infineon Technologies
-
1:
$4.80
-
688En existencias
|
N.º de artículo de Mouser
726-IPA60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
688En existencias
|
|
|
$4.80
|
|
|
$2.47
|
|
|
$2.25
|
|
|
$1.84
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R280CFD7XKSA1
- Infineon Technologies
-
1:
$3.17
-
348En existencias
|
N.º de artículo de Mouser
726-IPA60R280CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
348En existencias
|
|
|
$3.17
|
|
|
$1.58
|
|
|
$1.42
|
|
|
$1.14
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R115CFD7AUMA1
- Infineon Technologies
-
1:
$4.88
-
420En existencias
|
N.º de artículo de Mouser
726-IPL60R115CFD7AUM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
420En existencias
|
|
|
$4.88
|
|
|
$3.23
|
|
|
$2.29
|
|
|
$1.98
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
115 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 40 C
|
+ 150 C
|
124 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R041CFD7XKSA1
- Infineon Technologies
-
1:
$9.22
-
300En existencias
|
N.º de artículo de Mouser
726-IPP65R041CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
300En existencias
|
|
|
$9.22
|
|
|
$5.42
|
|
|
$4.80
|
|
|
$4.27
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
41 mOhms
|
- 20 V, 20 V
|
4.5 V
|
102 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
$7.56
-
149En existencias
|
N.º de artículo de Mouser
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
149En existencias
|
|
|
$7.56
|
|
|
$4.06
|
|
|
$3.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R125CFD7XKSA1
- Infineon Technologies
-
1:
$5.43
-
254En existencias
|
N.º de artículo de Mouser
726-IPW60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
254En existencias
|
|
|
$5.43
|
|
|
$3.05
|
|
|
$2.52
|
|
|
$2.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R029CFD7XKSA1
- Infineon Technologies
-
1:
$13.47
-
136En existencias
|
N.º de artículo de Mouser
726-IPW65R029CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
136En existencias
|
|
|
$13.47
|
|
|
$8.14
|
|
|
$7.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
$10.12
-
228En existencias
-
240En pedido
|
N.º de artículo de Mouser
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
228En existencias
240En pedido
|
|
|
$10.12
|
|
|
$6.00
|
|
|
$5.08
|
|
|
$4.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R145CFD7ATMA1
- Infineon Technologies
-
1:
$3.97
-
73En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB60R145CFD7ATM
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
73En existencias
|
|
|
$3.97
|
|
|
$2.61
|
|
|
$1.84
|
|
|
$1.66
|
|
|
$1.61
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
4.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R145CFD7XKSA1
- Infineon Technologies
-
1:
$4.70
-
15En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPW60R145CFD7XKS
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
15En existencias
|
|
|
$4.70
|
|
|
$3.56
|
|
|
$3.05
|
|
|
$2.80
|
|
|
Ver
|
|
|
$2.73
|
|
|
$2.68
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R035CFD7XTMA1
- Infineon Technologies
-
1:
$11.91
-
4,000Se espera el 24/12/2026
|
N.º de artículo de Mouser
726-IPT60R035CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,000Se espera el 24/12/2026
|
|
|
$11.91
|
|
|
$8.25
|
|
|
$6.48
|
|
|
$6.05
|
|
|
$6.05
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
67 A
|
35 mOhms
|
- 20 V, 20 V
|
4 V
|
109 nC
|
- 55 C
|
+ 150 C
|
351 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R160CFD7AUMA1
- Infineon Technologies
-
1:
$3.97
-
2,990Se espera el 26/5/2026
|
N.º de artículo de Mouser
726-IPL60R160CFD7AUM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,990Se espera el 26/5/2026
|
|
|
$3.97
|
|
|
$2.60
|
|
|
$1.94
|
|
|
$1.68
|
|
|
$1.63
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
160 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 40 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R145CFD7XKSA1
- Infineon Technologies
-
1:
$4.22
-
500Se espera el 29/10/2026
|
N.º de artículo de Mouser
726-IPP60R145CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
500Se espera el 29/10/2026
|
|
|
$4.22
|
|
|
$2.15
|
|
|
$1.95
|
|
|
$1.59
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R105CFD7XKSA1
- Infineon Technologies
-
500:
$2.34
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPP60R105CFD7XKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$2.34
|
|
|
$2.17
|
|
|
$2.04
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R170CFD7XKSA1
- Infineon Technologies
-
1:
$4.34
-
Plazo de entrega 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPW60R170CFD7XKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega 8 Semanas
|
|
|
$4.34
|
|
|
$2.39
|
|
|
$1.96
|
|
|
$1.64
|
|
|
$1.58
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R125CFD7XTMA1
- Infineon Technologies
-
1:
$4.23
-
Plazo de entrega 19 Semanas
|
N.º de artículo de Mouser
726-IPT60R125CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega 19 Semanas
|
|
|
$4.23
|
|
|
$2.82
|
|
|
$2.06
|
|
|
$1.75
|
|
|
$1.72
|
|
|
$1.63
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
125 mOhms
|
- 20 V, 20 V
|
4 V
|
8 nC
|
- 55 C
|
+ 150 C
|
127 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R090CFD7XKSA1
- Infineon Technologies
-
1:
$6.36
-
480Se espera el 9/9/2026
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N.º de artículo de Mouser
726-IPW60R090CFD7XKS
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
480Se espera el 9/9/2026
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$6.36
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$3.61
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$3.37
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$2.98
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$2.65
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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25 A
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90 mOhms
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- 20 V, 20 V
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3.5 V
|
51 nC
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- 55 C
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+ 150 C
|
125 W
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Enhancement
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R105CFD7XKSA1
- Infineon Technologies
-
1:
$6.71
-
Plazo de entrega no en existencias 8 Semanas
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPW60R105CFD7XKS
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
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$6.71
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$4.25
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$2.41
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Min.: 1
Mult.: 1
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Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
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Enhancement
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|
Tube
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