|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 8.4A N-CH MOSFET
- SIHG186N60EF-GE3
- Vishay / Siliconix
-
1:
$4.76
-
832En existencias
|
N.º de artículo de Mouser
78-SIHG186N60EF-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 8.4A N-CH MOSFET
|
|
832En existencias
|
|
|
$4.76
|
|
|
$2.72
|
|
|
$2.47
|
|
|
$2.07
|
|
|
$1.82
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
8.4 A
|
168 mOhms
|
- 30 V, 30 V
|
5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 16A N-CH MOSFET
- SIHF068N60EF-GE3
- Vishay Semiconductors
-
1:
$6.66
-
1,186En existencias
|
N.º de artículo de Mouser
78-SIHF068N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 16A N-CH MOSFET
|
|
1,186En existencias
|
|
|
$6.66
|
|
|
$3.53
|
|
|
$3.23
|
|
|
$3.18
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
68 mOhms
|
- 30 V, 30 V
|
5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
39 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600V PowerPAK 8x8 N-CHANNEL
- SIHH070N60EF-T1GE3
- Vishay / Siliconix
-
1:
$7.89
-
3,119En existencias
|
N.º de artículo de Mouser
78-SIHH070N60EFT1GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600V PowerPAK 8x8 N-CHANNEL
|
|
3,119En existencias
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerPAK-8 x 8
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
71 mOhms
|
- 30 V, 30 V
|
5 V
|
50 nC
|
- 55 C
|
+ 150 C
|
202 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 18A N-CH MOSFET
- SIHP186N60EF-GE3
- Vishay Semiconductors
-
1:
$4.80
-
1,336En existencias
|
N.º de artículo de Mouser
78-SIHP186N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 18A N-CH MOSFET
|
|
1,336En existencias
|
|
|
$4.80
|
|
|
$3.18
|
|
|
$2.25
|
|
|
$2.09
|
|
|
Ver
|
|
|
$1.94
|
|
|
$1.84
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
18 A
|
225 mOhms
|
- 30 V, 30 V
|
5 V
|
65 nC
|
- 55 C
|
+ 150 C
|
223 W
|
Enhancement
|
TrenchFET
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 41A N-CH MOSFET
- SIHP068N60EF-GE3
- Vishay Semiconductors
-
1:
$7.44
-
1,358En existencias
|
N.º de artículo de Mouser
78-SIHP068N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 41A N-CH MOSFET
|
|
1,358En existencias
|
|
|
$7.44
|
|
|
$4.88
|
|
|
$3.59
|
|
|
$3.19
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
68 mOhms
|
- 30 V, 30 V
|
5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 29A N-CH MOSFET
- SIHP105N60EF-GE3
- Vishay Semiconductors
-
1:
$6.58
-
1,620En existencias
|
N.º de artículo de Mouser
78-SIHP105N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 29A N-CH MOSFET
|
|
1,620En existencias
|
|
|
$6.58
|
|
|
$3.49
|
|
|
$3.19
|
|
|
$3.13
|
|
|
$2.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
88 mOhms
|
- 30 V, 30 V
|
5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
TrenchFET
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 8.4A N-CH MOSFET
- SIHA186N60EF-GE3
- Vishay / Siliconix
-
1:
$4.18
-
1,516En existencias
|
N.º de artículo de Mouser
78-SIHA186N60EF-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 8.4A N-CH MOSFET
|
|
1,516En existencias
|
|
|
$4.18
|
|
|
$2.72
|
|
|
$2.03
|
|
|
$1.70
|
|
|
Ver
|
|
|
$1.58
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
8.4 A
|
193 mOhms
|
- 30 V, 30 V
|
5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 41A N-CH MOSFET
- SIHG068N60EF-GE3
- Vishay Semiconductors
-
1:
$7.19
-
952En existencias
|
N.º de artículo de Mouser
78-SIHG068N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 41A N-CH MOSFET
|
|
952En existencias
|
|
|
$7.19
|
|
|
$4.85
|
|
|
$3.96
|
|
|
$3.52
|
|
|
$3.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
68 mOhms
|
- 30 V, 30 V
|
5 V
|
27 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 8.4A N-CH MOSFET
- SIHB186N60EF-GE3
- Vishay / Siliconix
-
1:
$4.19
-
936En existencias
|
N.º de artículo de Mouser
78-SIHB186N60EF-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 8.4A N-CH MOSFET
|
|
936En existencias
|
|
|
$4.19
|
|
|
$2.15
|
|
|
$1.95
|
|
|
$1.60
|
|
|
$1.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
8.4 A
|
168 mOhms
|
- 30 V, 30 V
|
5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 25A N-CH MOSFET
- SIHB125N60EF-GE3
- Vishay Semiconductors
-
1:
$5.67
-
689En existencias
|
N.º de artículo de Mouser
78-SIHB125N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 25A N-CH MOSFET
|
|
689En existencias
|
|
|
$5.67
|
|
|
$3.78
|
|
|
$2.70
|
|
|
$2.30
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
125 mOhms
|
- 30 V, 30 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 25A N-CH MOSFET
- SIHP125N60EF-GE3
- Vishay Semiconductors
-
1:
$6.01
-
489En existencias
|
N.º de artículo de Mouser
78-SIHP125N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 25A N-CH MOSFET
|
|
489En existencias
|
|
|
$6.01
|
|
|
$4.01
|
|
|
$2.88
|
|
|
$2.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
109 mOhms
|
- 30 V, 30 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
TrenchFET
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 16A N-CH MOSFET
- SIHH186N60EF-T1GE3
- Vishay / Siliconix
-
1:
$6.25
-
2,503En existencias
|
N.º de artículo de Mouser
78-SIHH186N60EFT1GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 16A N-CH MOSFET
|
|
2,503En existencias
|
|
|
$6.25
|
|
|
$4.19
|
|
|
$3.01
|
|
|
$2.77
|
|
|
$2.66
|
|
|
$2.62
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerPAK 8 x 8
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
168 mOhms
|
- 30 V, 30 V
|
5 V
|
21 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
TrenchFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 23A N-CH MOSFET
- SIHH125N60EF-T1GE3
- Vishay / Siliconix
-
1:
$7.44
-
2,647En existencias
|
N.º de artículo de Mouser
78-SIHH125N60EFT1GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 23A N-CH MOSFET
|
|
2,647En existencias
|
|
|
$7.44
|
|
|
$5.03
|
|
|
$3.66
|
|
|
$3.49
|
|
|
$3.31
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerPAK 8 x 8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
109 mOhms
|
- 30 V, 30 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
TrenchFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 25A N-CH MOSFET
- SIHG125N60EF-GE3
- Vishay Semiconductors
-
1:
$6.15
-
473En existencias
|
N.º de artículo de Mouser
78-SIHG125N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 25A N-CH MOSFET
|
|
473En existencias
|
|
|
$6.15
|
|
|
$3.24
|
|
|
$2.96
|
|
|
$2.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
125 mOhms
|
- 30 V, 30 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 41A N-CH MOSFET
- SIHB068N60EF-GE3
- Vishay Semiconductors
-
1:
$7.52
-
1,280En existencias
|
N.º de artículo de Mouser
78-SIHB068N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO263 600V 41A N-CH MOSFET
|
|
1,280En existencias
|
|
|
$7.52
|
|
|
$4.29
|
|
|
$3.63
|
|
|
$3.23
|
|
|
$2.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
68 mOhms
|
- 30 V, 30 V
|
5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO252 600V 19A N-CH MOSFET
- SIHD186N60EF-GE3
- Vishay Semiconductors
-
1:
$3.68
-
2,208En existencias
|
N.º de artículo de Mouser
78-SIHD186N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO252 600V 19A N-CH MOSFET
|
|
2,208En existencias
|
|
|
$3.68
|
|
|
$2.23
|
|
|
$1.66
|
|
|
$1.39
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
201 mOhms
|
- 30 V, 30 V
|
3 V
|
21 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 61A N-CH MOSFET
- SIHG039N60EF-GE3
- Vishay / Siliconix
-
1:
$11.60
-
537En existencias
|
N.º de artículo de Mouser
78-SIHG039N60EF-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 600V 61A N-CH MOSFET
|
|
537En existencias
|
|
|
$11.60
|
|
|
$8.27
|
|
|
$7.10
|
|
|
$6.36
|
|
|
$6.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
61 A
|
40 mOhms
|
- 30 V, 30 V
|
3 V
|
84 nC
|
- 55 C
|
+ 150 C
|
357 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 21A N-CH MOSFET
- SIHK125N60EF-T1GE3
- Vishay Semiconductors
-
1:
$6.37
-
1,375En existencias
|
N.º de artículo de Mouser
78-SIHK125N60EFT1GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 600V 21A N-CH MOSFET
|
|
1,375En existencias
|
|
|
$6.37
|
|
|
$4.22
|
|
|
$3.08
|
|
|
$2.79
|
|
|
$2.62
|
|
|
$2.40
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
1 Channel
|
40 V
|
35.4 A
|
2.3 mOhms
|
- 30 V, 30 V
|
2.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
65.7 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) E Series Pwr MOSFET w/Fast Body Diode
- SIHA105N60EF-GE3
- Vishay / Siliconix
-
1:
$5.05
-
759En existencias
|
N.º de artículo de Mouser
78-SIHA105N60EF-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) E Series Pwr MOSFET w/Fast Body Diode
|
|
759En existencias
|
|
|
$5.05
|
|
|
$2.62
|
|
|
$2.38
|
|
|
$2.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
100 mOhms
|
- 30 V, 30 V
|
5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TOLL 600V 47A E SERIES
- SIHK045N60EF-T1GE3
- Vishay Semiconductors
-
1:
$10.73
-
7,665En pedido
|
N.º de artículo de Mouser
78-SIHK045N60EF
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TOLL 600V 47A E SERIES
|
|
7,665En pedido
En pedido:
1,665 Se espera el 18/5/2026
2,000 Se espera el 25/5/2026
4,000 Se espera el 17/5/2027
Plazo de entrega de fábrica:
41 Semanas
|
|
|
$10.73
|
|
|
$7.46
|
|
|
$6.05
|
|
|
$5.86
|
|
|
$5.71
|
|
|
$5.24
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
SO-8
|
N-Channel
|
1 Channel
|
80 V
|
66 A
|
12.5 mOhms
|
- 20 V, 20 V
|
2.5 V
|
45 nC
|
- 55 C
|
+ 175 C
|
135 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 600V
- SIHB055N60EF-GE3
- Vishay Semiconductors
-
1:
$7.23
-
2,000En pedido
|
N.º de artículo de Mouser
78-SIHB055N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 600V
|
|
2,000En pedido
En pedido:
1,000 Se espera el 14/9/2026
1,000 Se espera el 23/11/2026
Plazo de entrega de fábrica:
20 Semanas
|
|
|
$7.23
|
|
|
$3.87
|
|
|
$3.54
|
|
|
$3.18
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263AB-4
|
N-Channel
|
1 Channel
|
600 V
|
46 A
|
55 mOhms
|
- 30 V, 30 V
|
5 V
|
63 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 11A N-CH MOSFET
- SIHA125N60EF-GE3
- Vishay Semiconductors
-
1,000:
$2.30
-
1,000Existencias disponibles
|
N.º de artículo de Mouser
78-SIHA125N60EF-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 600V 11A N-CH MOSFET
|
|
1,000Existencias disponibles
|
|
Min.: 1,000
Mult.: 1,000
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
125 mOhms
|
- 30 V, 30 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
|
|
|