|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R750P7XKSA1
- Infineon Technologies
-
1:
$2.25
-
2,376Se espera el 13/8/2026
|
N.º de artículo de Mouser
726-IPA80R750P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,376Se espera el 13/8/2026
|
|
|
$2.25
|
|
|
$1.09
|
|
|
$0.973
|
|
|
$0.806
|
|
|
Ver
|
|
|
$0.723
|
|
|
$0.656
|
|
|
$0.642
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
- 20 V, 20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R060P7XKSA1
- Infineon Technologies
-
1:
$6.23
-
407En existencias
-
1,500En pedido
|
N.º de artículo de Mouser
726-IPA60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
407En existencias
1,500En pedido
Existencias:
407 Se puede enviar inmediatamente
En pedido:
500 Se espera el 26/5/2026
1,000 Se espera el 7/9/2026
Plazo de entrega de fábrica:
16 Semanas
|
|
|
$6.23
|
|
|
$3.29
|
|
|
$3.00
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R280P7SAUMA1
- Infineon Technologies
-
1:
$1.72
-
4,200Se espera el 6/8/2026
|
N.º de artículo de Mouser
726-IPD60R280P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,200Se espera el 6/8/2026
|
|
|
$1.72
|
|
|
$1.08
|
|
|
$0.727
|
|
|
$0.594
|
|
|
$0.54
|
|
|
$0.459
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R900P7ATMA1
- Infineon Technologies
-
1:
$1.88
-
7,500Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IPD80R900P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
7,500Se espera el 1/6/2026
|
|
|
$1.88
|
|
|
$1.20
|
|
|
$0.802
|
|
|
$0.634
|
|
|
$0.512
|
|
|
Ver
|
|
|
$0.579
|
|
|
$0.503
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R1K4P7ATMA1
- Infineon Technologies
-
1:
$1.52
-
18,973En pedido
|
N.º de artículo de Mouser
726-IPN80R1K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
18,973En pedido
En pedido:
9,973 Se espera el 19/11/2026
9,000 Se espera el 26/11/2026
Plazo de entrega de fábrica:
19 Semanas
|
|
|
$1.52
|
|
|
$0.943
|
|
|
$0.615
|
|
|
$0.473
|
|
|
$0.373
|
|
|
Ver
|
|
|
$0.44
|
|
|
$0.365
|
|
|
$0.353
|
|
|
$0.343
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
$6.59
-
3,520En pedido
|
N.º de artículo de Mouser
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,520En pedido
En pedido:
2,080 Se espera el 25/6/2026
1,440 Se espera el 2/7/2026
Plazo de entrega de fábrica:
13 Semanas
|
|
|
$6.59
|
|
|
$3.75
|
|
|
$3.12
|
|
|
$2.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R160P7XKSA1
- Infineon Technologies
-
1:
$3.19
-
1,000En pedido
|
N.º de artículo de Mouser
726-IPP60R160P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,000En pedido
En pedido:
500 Se espera el 11/6/2026
500 Se espera el 23/7/2026
Plazo de entrega de fábrica:
8 Semanas
|
|
|
$3.19
|
|
|
$1.59
|
|
|
$1.44
|
|
|
$1.15
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
160 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
$8.42
-
220Se espera el 16/7/2026
|
N.º de artículo de Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
220Se espera el 16/7/2026
|
|
|
$8.42
|
|
|
$6.74
|
|
|
$5.45
|
|
|
$4.84
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R600P7SXKSA1
- Infineon Technologies
-
1:
$1.43
-
1,000En pedido
|
N.º de artículo de Mouser
726-IPA60R600P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,000En pedido
En pedido:
500 Se espera el 16/7/2026
500 Se espera el 23/7/2026
Plazo de entrega de fábrica:
24 Semanas
|
|
|
$1.43
|
|
|
$0.673
|
|
|
$0.599
|
|
|
$0.469
|
|
|
$0.393
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 40 C
|
+ 150 C
|
21 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R900P7XKSA1
- Infineon Technologies
-
1:
$2.12
-
266Se espera el 16/7/2026
|
N.º de artículo de Mouser
726-IPA80R900P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
266Se espera el 16/7/2026
|
|
|
$2.12
|
|
|
$1.23
|
|
|
$0.932
|
|
|
$0.745
|
|
|
Ver
|
|
|
$0.613
|
|
|
$0.593
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP80R1K4P7XKSA1
- Infineon Technologies
-
1:
$1.87
-
350Se espera el 18/3/2027
|
N.º de artículo de Mouser
726-IPP80R1K4P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
350Se espera el 18/3/2027
|
|
|
$1.87
|
|
|
$0.894
|
|
|
$0.799
|
|
|
$0.63
|
|
|
Ver
|
|
|
$0.53
|
|
|
$0.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
10 nC
|
- 50 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R060P7XKSA1
- Infineon Technologies
-
1:
$8.07
-
227Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IPZA60R060P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
227Se espera el 1/6/2026
|
|
|
$8.07
|
|
|
$4.67
|
|
|
$3.92
|
|
|
$3.63
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R099P7XKSA1
- Infineon Technologies
-
1:
$6.21
-
240Se espera el 20/8/2026
|
N.º de artículo de Mouser
726-IPZA60R099P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
240Se espera el 20/8/2026
|
|
|
$6.21
|
|
|
$3.52
|
|
|
$2.93
|
|
|
$2.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R2K0P7AKMA1
- Infineon Technologies
-
1:
$1.46
-
Plazo de entrega no en existencias 8 Semanas
|
N.º de artículo de Mouser
726-IPU80R2K0P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$1.46
|
|
|
$0.915
|
|
|
$0.596
|
|
|
$0.459
|
|
|
Ver
|
|
|
$0.415
|
|
|
$0.377
|
|
|
$0.354
|
|
|
$0.343
|
|
|
$0.333
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
1.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPW80R360P7XKSA1
- Infineon Technologies
-
1:
$3.88
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPW80R360P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$3.88
|
|
|
$2.12
|
|
|
$1.73
|
|
|
$1.44
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
84 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA95R750P7XKSA1
- Infineon Technologies
-
1:
$2.78
-
Plazo de entrega no en existencias 18 Semanas
|
N.º de artículo de Mouser
726-IPA95R750P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 18 Semanas
|
|
|
$2.78
|
|
|
$1.38
|
|
|
$1.23
|
|
|
$0.99
|
|
|
$0.864
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
- 20 V, 20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPAN80R360P7XKSA1
- Infineon Technologies
-
1:
$3.24
-
Plazo de entrega no en existencias 13 Semanas
|
N.º de artículo de Mouser
726-IPAN80R360P7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 13 Semanas
|
|
|
$3.24
|
|
|
$1.63
|
|
|
$1.47
|
|
|
$1.18
|
|
|
$1.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 30 V, 30 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R600P7AKMA1
- Infineon Technologies
-
1:
$2.32
-
Plazo de entrega no en existencias 19 Semanas
|
N.º de artículo de Mouser
726-IPU80R600P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 19 Semanas
|
|
|
$2.32
|
|
|
$1.06
|
|
|
$0.948
|
|
|
$0.798
|
|
|
Ver
|
|
|
$0.733
|
|
|
$0.68
|
|
|
$0.671
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R080P7XKSA1
- Infineon Technologies
-
1:
$7.24
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Plazo de entrega no en existencias 17 Semanas
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N.º de artículo de Mouser
726-IPZA60R080P7XKSA
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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Plazo de entrega no en existencias 17 Semanas
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$7.24
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$4.15
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$3.47
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$3.14
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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600 V
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37 A
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69 mOhms
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- 20 V, 20 V
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3 V
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51 nC
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- 55 C
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+ 150 C
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129 W
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Enhancement
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CoolMOS
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Tube
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