|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R280P7XKSA1
- Infineon Technologies
-
1:
$3.97
-
856En existencias
|
N.º de artículo de Mouser
726-IPA80R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
856En existencias
|
|
|
$3.97
|
|
|
$2.01
|
|
|
$1.82
|
|
|
$1.48
|
|
|
$1.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R360P7XKSA1
- Infineon Technologies
-
1:
$3.26
-
803En existencias
|
N.º de artículo de Mouser
726-IPA80R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
803En existencias
|
|
|
$3.26
|
|
|
$1.63
|
|
|
$1.47
|
|
|
$1.18
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R450P7XKSA1
- Infineon Technologies
-
1:
$2.69
-
1,592En existencias
|
N.º de artículo de Mouser
726-IPA80R450P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,592En existencias
|
|
|
$2.69
|
|
|
$1.39
|
|
|
$1.22
|
|
|
$0.998
|
|
|
Ver
|
|
|
$0.934
|
|
|
$0.873
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R600P7XKSA1
- Infineon Technologies
-
1:
$2.47
-
901En existencias
|
N.º de artículo de Mouser
726-IPA80R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
901En existencias
|
|
|
$2.47
|
|
|
$1.58
|
|
|
$1.10
|
|
|
$0.926
|
|
|
Ver
|
|
|
$0.82
|
|
|
$0.776
|
|
|
$0.737
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA95R1K2P7XKSA1
- Infineon Technologies
-
1:
$2.29
-
1,548En existencias
|
N.º de artículo de Mouser
726-IPA95R1K2P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,548En existencias
|
|
|
$2.29
|
|
|
$1.11
|
|
|
$0.994
|
|
|
$0.791
|
|
|
Ver
|
|
|
$0.671
|
|
|
$0.659
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R280P7ATMA1
- Infineon Technologies
-
1:
$2.22
-
606En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
726-IPD60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
606En existencias
2,500En pedido
|
|
|
$2.22
|
|
|
$1.42
|
|
|
$0.961
|
|
|
$0.764
|
|
|
$0.701
|
|
|
$0.632
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R360P7SAUMA1
- Infineon Technologies
-
1:
$1.38
-
141En existencias
-
17,500En pedido
|
N.º de artículo de Mouser
726-IPD60R360P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
141En existencias
17,500En pedido
Existencias:
141 Se puede enviar inmediatamente
En pedido:
2,500 Se espera el 1/10/2026
10,000 Se espera el 26/10/2026
5,000 Se espera el 31/12/2026
Plazo de entrega de fábrica:
23 Semanas
|
|
|
$1.38
|
|
|
$0.871
|
|
|
$0.575
|
|
|
$0.448
|
|
|
$0.362
|
|
|
Ver
|
|
|
$0.408
|
|
|
$0.329
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD70R360P7SAUMA1
- Infineon Technologies
-
1:
$1.45
-
67En existencias
-
127,500En pedido
|
N.º de artículo de Mouser
726-IPD70R360P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
67En existencias
127,500En pedido
Existencias:
67 Se puede enviar inmediatamente
En pedido:
50,000 Se espera el 21/10/2026
32,500 Se espera el 10/12/2026
45,000 Se espera el 24/12/2026
Plazo de entrega de fábrica:
23 Semanas
|
|
|
$1.45
|
|
|
$0.912
|
|
|
$0.599
|
|
|
$0.473
|
|
|
$0.383
|
|
|
Ver
|
|
|
$0.43
|
|
|
$0.351
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
- 16 V, 16 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
59.5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD70R600P7SAUMA1
- Infineon Technologies
-
1:
$1.18
-
517En existencias
-
5,000Se espera el 1/6/2026
|
N.º de artículo de Mouser
726-IPD70R600P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
517En existencias
5,000Se espera el 1/6/2026
|
|
|
$1.18
|
|
|
$0.767
|
|
|
$0.504
|
|
|
$0.424
|
|
|
$0.397
|
|
|
$0.315
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
43.1 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R1K4P7ATMA1
- Infineon Technologies
-
1:
$1.57
-
481En existencias
-
2,500Se espera el 17/12/2026
|
N.º de artículo de Mouser
726-IPD80R1K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
481En existencias
2,500Se espera el 17/12/2026
|
|
|
$1.57
|
|
|
$0.991
|
|
|
$0.659
|
|
|
$0.516
|
|
|
$0.42
|
|
|
Ver
|
|
|
$0.471
|
|
|
$0.391
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
10 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice
- IPD80R3K3P7ATMA1
- Infineon Technologies
-
1:
$1.32
-
3,040En existencias
|
N.º de artículo de Mouser
726-IPD80R3K3P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice
|
|
3,040En existencias
|
|
|
$1.32
|
|
|
$0.672
|
|
|
$0.455
|
|
|
$0.366
|
|
|
$0.309
|
|
|
$0.272
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.9 A
|
2.8 Ohms
|
- 20 V, 20 V
|
2.5 V
|
5.8 nC
|
- 55 C
|
+ 150 C
|
18 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R450P7ATMA1
- Infineon Technologies
-
1:
$2.69
-
904En existencias
-
7,500Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPD80R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
904En existencias
7,500Se espera el 2/7/2026
|
|
|
$2.69
|
|
|
$1.71
|
|
|
$1.19
|
|
|
$0.95
|
|
|
$0.879
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 50 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R600P7ATMA1
- Infineon Technologies
-
1:
$2.30
-
1,754En existencias
|
N.º de artículo de Mouser
726-IPD80R600P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,754En existencias
|
|
|
$2.30
|
|
|
$1.48
|
|
|
$1.01
|
|
|
$0.797
|
|
|
$0.732
|
|
|
$0.665
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
- 20 V, 20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R360P7SATMA1
- Infineon Technologies
-
1:
$1.38
-
1,504En existencias
-
12,000Se espera el 31/8/2026
|
N.º de artículo de Mouser
726-IPN60R360P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,504En existencias
12,000Se espera el 31/8/2026
|
|
|
$1.38
|
|
|
$0.865
|
|
|
$0.572
|
|
|
$0.445
|
|
|
$0.352
|
|
|
Ver
|
|
|
$0.405
|
|
|
$0.326
|
|
|
$0.32
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R600P7SATMA1
- Infineon Technologies
-
1:
$1.22
-
4,828En existencias
|
N.º de artículo de Mouser
726-IPN70R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,828En existencias
|
|
|
$1.22
|
|
|
$0.757
|
|
|
$0.502
|
|
|
$0.389
|
|
|
$0.305
|
|
|
Ver
|
|
|
$0.352
|
|
|
$0.282
|
|
|
$0.275
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
6.9 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R2K4P7ATMA1
- Infineon Technologies
-
1:
$1.21
-
969En existencias
-
9,000En pedido
|
N.º de artículo de Mouser
726-IPN80R2K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
969En existencias
9,000En pedido
Existencias:
969 Se puede enviar inmediatamente
En pedido:
6,000 Se espera el 7/9/2026
3,000 Se espera el 3/12/2026
Plazo de entrega de fábrica:
16 Semanas
|
|
|
$1.21
|
|
|
$0.758
|
|
|
$0.498
|
|
|
$0.386
|
|
|
$0.303
|
|
|
Ver
|
|
|
$0.35
|
|
|
$0.28
|
|
|
$0.273
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
- 30 V, 30 V
|
3.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R099P7XKSA1
- Infineon Technologies
-
1:
$4.78
-
131En existencias
-
500Se espera el 28/9/2026
|
N.º de artículo de Mouser
726-IPP60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
131En existencias
500Se espera el 28/9/2026
|
|
|
$4.78
|
|
|
$2.47
|
|
|
$2.24
|
|
|
$1.84
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R120P7XKSA1
- Infineon Technologies
-
1:
$4.13
-
524En existencias
|
N.º de artículo de Mouser
726-IPP60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
524En existencias
|
|
|
$4.13
|
|
|
$2.10
|
|
|
$1.91
|
|
|
$1.70
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280P7XKSA1
- Infineon Technologies
-
1:
$2.60
-
136En existencias
-
500Se espera el 24/9/2026
|
N.º de artículo de Mouser
726-IPP60R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
136En existencias
500Se espera el 24/9/2026
|
|
|
$2.60
|
|
|
$1.28
|
|
|
$1.17
|
|
|
$0.914
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R4K5P7AKMA1
- Infineon Technologies
-
1:
$1.15
-
2,996En existencias
|
N.º de artículo de Mouser
726-IPU80R4K5P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,996En existencias
|
|
|
$1.15
|
|
|
$0.493
|
|
|
$0.438
|
|
|
$0.36
|
|
|
Ver
|
|
|
$0.326
|
|
|
$0.305
|
|
|
$0.267
|
|
|
$0.252
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU95R750P7AKMA1
- Infineon Technologies
-
1:
$2.53
-
6En existencias
|
N.º de artículo de Mouser
726-IPU95R750P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
6En existencias
|
|
|
$2.53
|
|
|
$1.37
|
|
|
$1.09
|
|
|
$0.917
|
|
|
Ver
|
|
|
$0.798
|
|
|
$0.742
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
- 20 V, 20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
$10.15
-
30En existencias
-
7,920En pedido
|
N.º de artículo de Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
30En existencias
7,920En pedido
Existencias:
30 Se puede enviar inmediatamente
En pedido:
240 Se espera el 1/6/2026
7,680 Se espera el 1/7/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$10.15
|
|
|
$6.51
|
|
|
$5.43
|
|
|
$4.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
$8.30
-
849En existencias
|
N.º de artículo de Mouser
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
849En existencias
|
|
|
$8.30
|
|
|
$5.45
|
|
|
$4.47
|
|
|
$3.92
|
|
|
$3.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R120P7XKSA1
- Infineon Technologies
-
1:
$5.08
-
317En existencias
|
N.º de artículo de Mouser
726-IPW60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
317En existencias
|
|
|
$5.08
|
|
|
$3.31
|
|
|
$2.44
|
|
|
$2.02
|
|
|
Ver
|
|
|
$2.01
|
|
|
$1.88
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
-
1:
$11.48
-
114En existencias
-
240Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPZA60R037P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
114En existencias
240Se espera el 9/7/2026
|
|
|
$11.48
|
|
|
$6.84
|
|
|
$5.82
|
|
|
$5.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|