|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R450P7ATMA1
- Infineon Technologies
-
1:
$2.48
-
4,161En existencias
|
N.º de artículo de Mouser
726-IPD80R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,161En existencias
|
|
|
$2.48
|
|
|
$1.58
|
|
|
$1.08
|
|
|
$0.901
|
|
|
$0.734
|
|
|
Ver
|
|
|
$0.793
|
|
|
$0.709
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
24 nC
|
- 50 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R750P7ATMA1
- Infineon Technologies
-
1:
$2.37
-
4,800En existencias
|
N.º de artículo de Mouser
726-IPD95R750P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,800En existencias
|
|
|
$2.37
|
|
|
$1.51
|
|
|
$1.05
|
|
|
$0.89
|
|
|
$0.686
|
|
|
Ver
|
|
|
$0.743
|
|
|
$0.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
- 20 V, 20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$3.69
-
7,565En existencias
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,565En existencias
|
|
|
$3.69
|
|
|
$2.42
|
|
|
$1.70
|
|
|
$1.49
|
|
|
$1.43
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
$2.80
-
2,450En existencias
|
N.º de artículo de Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,450En existencias
|
|
|
$2.80
|
|
|
$1.80
|
|
|
$1.29
|
|
|
$1.08
|
|
|
$0.881
|
|
|
Ver
|
|
|
$0.927
|
|
|
$0.852
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.62
-
5,772En existencias
|
N.º de artículo de Mouser
726-IPN95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,772En existencias
|
|
|
$1.62
|
|
|
$1.03
|
|
|
$0.689
|
|
|
$0.564
|
|
|
$0.454
|
|
|
Ver
|
|
|
$0.494
|
|
|
$0.412
|
|
|
$0.408
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R3K7P7ATMA1
- Infineon Technologies
-
1:
$1.16
-
29,400En existencias
|
N.º de artículo de Mouser
726-IPN95R3K7P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
29,400En existencias
|
|
|
$1.16
|
|
|
$0.73
|
|
|
$0.481
|
|
|
$0.381
|
|
|
$0.309
|
|
|
Ver
|
|
|
$0.339
|
|
|
$0.278
|
|
|
$0.261
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
3.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R099P7XKSA1
- Infineon Technologies
-
1:
$4.18
-
947En existencias
|
N.º de artículo de Mouser
726-IPP60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
947En existencias
|
|
|
$4.18
|
|
|
$2.15
|
|
|
$1.95
|
|
|
$1.64
|
|
|
Ver
|
|
|
$1.60
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
$2.71
-
5,764En existencias
|
N.º de artículo de Mouser
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,764En existencias
|
|
|
$2.71
|
|
|
$1.29
|
|
|
$1.20
|
|
|
$0.977
|
|
|
Ver
|
|
|
$0.839
|
|
|
$0.836
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$4.24
-
1,067En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,067En existencias
|
|
|
$4.24
|
|
|
$2.17
|
|
|
$2.14
|
|
|
$2.13
|
|
|
Ver
|
|
|
$1.96
|
|
|
$1.93
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.37
-
2,204En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPN95R2K0P7ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,204En existencias
|
|
|
$1.37
|
|
|
$0.861
|
|
|
$0.571
|
|
|
$0.446
|
|
|
$0.406
|
|
|
$0.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R1K4P7AKMA1
- Infineon Technologies
-
1:
$1.39
-
1,334En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPU80R1K4P7AKMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,334En existencias
|
|
|
$1.39
|
|
|
$1.33
|
|
|
$1.11
|
|
|
$0.992
|
|
|
Ver
|
|
|
$0.76
|
|
|
$0.668
|
|
|
$0.658
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
10 nC
|
- 50 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU95R3K7P7AKMA1
- Infineon Technologies
-
1:
$1.37
-
2,153En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPU95R3K7P7AKMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,153En existencias
|
|
|
$1.37
|
|
|
$0.866
|
|
|
$0.573
|
|
|
$0.471
|
|
|
Ver
|
|
|
$0.406
|
|
|
$0.372
|
|
|
$0.337
|
|
|
$0.322
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
3.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R160P7XKSA1
- Infineon Technologies
-
1:
$2.90
-
370En existencias
|
N.º de artículo de Mouser
726-IPA60R160P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
370En existencias
|
|
|
$2.90
|
|
|
$1.44
|
|
|
$1.30
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.898
|
|
|
$0.874
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
374 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R600P7XKSA1
- Infineon Technologies
-
1:
$1.86
-
741En existencias
|
N.º de artículo de Mouser
726-IPA60R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
741En existencias
|
|
|
$1.86
|
|
|
$0.997
|
|
|
$0.791
|
|
|
$0.648
|
|
|
Ver
|
|
|
$0.493
|
|
|
$0.451
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 55 C
|
+ 150 C
|
21 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA80R750P7XKSA1
- Infineon Technologies
-
1:
$1.97
-
500En existencias
|
N.º de artículo de Mouser
726-IPA80R750P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
500En existencias
|
|
|
$1.97
|
|
|
$0.95
|
|
|
$0.851
|
|
|
$0.675
|
|
|
Ver
|
|
|
$0.644
|
|
|
$0.572
|
|
|
$0.536
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
- 20 V, 20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.26
-
783En existencias
|
N.º de artículo de Mouser
726-IPAN60R180P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
783En existencias
|
|
|
$2.26
|
|
|
$1.10
|
|
|
$0.987
|
|
|
$0.883
|
|
|
Ver
|
|
|
$0.671
|
|
|
$0.646
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R080P7ATMA1
- Infineon Technologies
-
1:
$4.89
-
611En existencias
-
1,000Se espera el 10/3/2026
|
N.º de artículo de Mouser
726-IPB60R080P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
611En existencias
1,000Se espera el 10/3/2026
|
|
|
$4.89
|
|
|
$3.25
|
|
|
$2.31
|
|
|
$2.18
|
|
|
$1.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$2.77
-
980En existencias
-
2,000Se espera el 16/2/2026
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
980En existencias
2,000Se espera el 16/2/2026
|
|
|
$2.77
|
|
|
$1.81
|
|
|
$1.25
|
|
|
$1.03
|
|
|
$0.908
|
|
|
$0.837
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.29
-
3,217En existencias
|
N.º de artículo de Mouser
726-IPD80R2K0P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
3,217En existencias
|
|
|
$1.29
|
|
|
$0.813
|
|
|
$0.535
|
|
|
$0.424
|
|
|
$0.344
|
|
|
Ver
|
|
|
$0.377
|
|
|
$0.309
|
|
|
$0.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
1.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R360P7ATMA1
- Infineon Technologies
-
1:
$2.91
-
50En existencias
|
N.º de artículo de Mouser
726-IPD80R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
50En existencias
|
|
|
$2.91
|
|
|
$1.88
|
|
|
$1.34
|
|
|
$1.12
|
|
|
$0.916
|
|
|
Ver
|
|
|
$0.964
|
|
|
$0.885
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
310 mOhms
|
- 20 V, 20 V
|
2.5 V
|
30 nC
|
- 55 C
|
+ 150 C
|
84 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.08
-
924En existencias
-
2,500Se espera el 16/4/2026
|
N.º de artículo de Mouser
726-IPD80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
924En existencias
2,500Se espera el 16/4/2026
|
|
|
$1.08
|
|
|
$0.659
|
|
|
$0.43
|
|
|
$0.332
|
|
|
$0.246
|
|
|
Ver
|
|
|
$0.283
|
|
|
$0.222
|
|
|
$0.209
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R1K4P7SATMA1
- Infineon Technologies
-
1:
$0.82
-
7,759En existencias
|
N.º de artículo de Mouser
726-IPN70R1K4P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
7,759En existencias
|
|
|
$0.82
|
|
|
$0.513
|
|
|
$0.335
|
|
|
$0.257
|
|
|
$0.192
|
|
|
Ver
|
|
|
$0.231
|
|
|
$0.176
|
|
|
$0.155
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
4 A
|
1.15 Ohms
|
- 16 V, 16 V
|
2.5 V
|
4.7 nC
|
- 40 C
|
+ 150 C
|
6.2 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R4K5P7ATMA1
- Infineon Technologies
-
1:
$0.94
-
4,410En existencias
-
6,000Se espera el 2/3/2026
|
N.º de artículo de Mouser
726-IPN80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,410En existencias
6,000Se espera el 2/3/2026
|
|
|
$0.94
|
|
|
$0.587
|
|
|
$0.382
|
|
|
$0.294
|
|
|
$0.222
|
|
|
Ver
|
|
|
$0.266
|
|
|
$0.204
|
|
|
$0.184
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
3.8 Ohms
|
- 20 V, 20 V
|
2.5 V
|
4 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R160P7XKSA1
- Infineon Technologies
-
1:
$2.90
-
263En existencias
|
N.º de artículo de Mouser
726-IPP60R160P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
263En existencias
|
|
|
$2.90
|
|
|
$1.44
|
|
|
$1.30
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.898
|
|
|
$0.874
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
160 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU80R900P7AKMA1
- Infineon Technologies
-
1:
$1.66
-
1,451En existencias
|
N.º de artículo de Mouser
726-IPU80R900P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,451En existencias
|
|
|
$1.66
|
|
|
$0.739
|
|
|
$0.662
|
|
|
$0.553
|
|
|
Ver
|
|
|
$0.506
|
|
|
$0.467
|
|
|
$0.423
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Tube
|
|